期刊文献+

基于MOS-NDR负阻器件的D触发器设计

D flip-flop design based on MOS-NDR negative resistance device
在线阅读 下载PDF
导出
摘要 负阻器件由于在电流-电压特性曲线中表现出独特的负微分电阻特性,从而大大增加了单个器件所能实现的逻辑功能.如果将其用于数字逻辑电路设计,尤其是触发器的设计,可有效减少器件的数目.通过分析CMOS工艺负阻器件MOS-NDR及单双稳态转换逻辑单元MOBILE的工作特性,设计了一个时钟上升沿触发的D触发器.采用TSMC 0.18μm工艺对所设计的电路进行HSPICE仿真,仿真结果表明所设计的电路具有正确的逻辑功能.与基于MOS-NDR负阻器件的同类触发器相比,新设计的D触发器具有更稳健的输出和较强的抗干扰能力. Negative resistance device shows a unique negative differential resistance characteristic in the current-voltage characteristic curve, which significantly increases the function of a single device. If negative resistance device is employed in digital logic circuit design, especially the design of the flip-flop, the number of devices can be reduced. Through analysis of the operating characteristics of CMOS based MOS-NDR negative resistance device and MO- BILE, a clock rising edge triggered D flip-flop is designed. The circuit is verified by HSPICE simulation with TSMC 0.18μm technology and the simulation results show that the proposed design has correct logic function. Compared to the other D flip-flop design based on MOS-NDR, it shows a more robust output and stronger anti-interference ability.
出处 《浙江大学学报(理学版)》 CAS CSCD 2013年第6期641-645,649,共6页 Journal of Zhejiang University(Science Edition)
基金 国家自然科学基金资助项目(No.61071062) 浙江省自然科学基金资助项目(No.LY13T010001)
关键词 负阻器件 MOS-NDR MOBILE D触发器 negative resistance device MOS-NDR MOBILE D flip-flop
  • 相关文献

参考文献11

  • 1郭维廉,牛萍娟,李晓云,刘宏伟,谷晓,毛陆虹,张世林,陈燕,王伟.CMOS负阻单元逻辑电路及其发展前景[J].微纳电子技术,2010,47(8):461-469. 被引量:2
  • 2GAN K J, TSAI C S, CHEN Y W, et al. Voltage- controlled multiple-valued logic gate design using nega- tive differential resistance devices[J]. Solid-State Elec- tronics, 2010,54(12) : 1637-1640.
  • 3BEREZOWSKI K S, VRUDHULA S B K. Multiple-val- ued logic circuits design using negative differential resist- ance devices[C]//37th International Symposium on Multi- pie-Valued Logic. Oslo: IEEE CS,2007:24-30.
  • 4林弥,沈继忠,王林.基于开关序列的RTD多值反相器设计[J].浙江大学学报(理学版),2004,31(1):38-42. 被引量:4
  • 5NUNEZ J, QUINTANA J M, AVEDILLO M J. Fast and area efficient multi-input muller C-Element based on MOS-NDR[C]//2009 IEEE International Symposi- um on Circuits and Systems. Taipei.. National Cheng Kung University,2009 : 1811-1814.
  • 6LIANG D S, GAN K J. New D-type flip-flop de.sign using negative differential resistance circuits[C]//4th IEEE Inter-national Symposium on Electronic Design, Test and Applica- tions. Hong Kong.. IEEE CS,2008:258-261.
  • 7GANKJ, TSAICS, HSIENC W, et al. Design of monostable-bistable transition logic element using the EiCMOS-Based negative differential resistance circuit[J] Analog Integrated Circuits and Signal Processing, 2011,68(3) :379-385.
  • 8NUNEZ J, AVEDILLO M J, QUINTANA J M. Effi- cient realization of MOS-NDR threshold logic gates[J]. Electronics Letters, 2009,45(23) : 1158-1159.
  • 9MAEZAWA K. Resonant tunneling diodes and their application to high-speed circuits[C]//Proceeding of Compound Semiconductor Integrated Circuit Symposi- um. Palm Springs: IEEE,2005:97-100.
  • 10WEI Yi, SHEN Ji-zhong. Novel universal threshold logic gate based on RTD and its application[J]. Mi- croelectronics Journal, 2011,42 (6) : 851-854.

二级参考文献6

共引文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部