The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.展开更多
研究了重离子引起漏电退化损伤对1 200 V SiC MOSFET栅极可靠性的影响。结果表明,在Ta离子辐照下,V_(DS)在150 V至200 V时,器件漏电流由纳安增加至微安,通过微光显微镜(EMMI)发现损伤主要集中在器件的主结区。经过168 h的20 V栅压考核,...研究了重离子引起漏电退化损伤对1 200 V SiC MOSFET栅极可靠性的影响。结果表明,在Ta离子辐照下,V_(DS)在150 V至200 V时,器件漏电流由纳安增加至微安,通过微光显微镜(EMMI)发现损伤主要集中在器件的主结区。经过168 h的20 V栅压考核,漏电退化器件栅漏电由几微安升高至百微安,但最大跨导和转移特性均无明显变化。研究同时验证了在负栅压辐照条件下,器件栅极更易发生漏电。综上,本研究为SiC MOSFET辐照后栅极可靠性评估、抗辐照性能加固提出新的视角,对探讨天-地等效的重离子单粒子效应模拟实验方法具有一定参考意义。展开更多
基金Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021+1 种基金the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092the Qing Lan Project
文摘The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.
文摘研究了重离子引起漏电退化损伤对1 200 V SiC MOSFET栅极可靠性的影响。结果表明,在Ta离子辐照下,V_(DS)在150 V至200 V时,器件漏电流由纳安增加至微安,通过微光显微镜(EMMI)发现损伤主要集中在器件的主结区。经过168 h的20 V栅压考核,漏电退化器件栅漏电由几微安升高至百微安,但最大跨导和转移特性均无明显变化。研究同时验证了在负栅压辐照条件下,器件栅极更易发生漏电。综上,本研究为SiC MOSFET辐照后栅极可靠性评估、抗辐照性能加固提出新的视角,对探讨天-地等效的重离子单粒子效应模拟实验方法具有一定参考意义。
