A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. ...A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.展开更多
In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the...In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing （PDA） times. The equivalent oxide thickness （EOT） decreases when the annealing time（s） change from 1 to 2. Furthermore, the characteristics of SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied systematically. The increase of the PDA time（s） from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.展开更多
随着产品功能需求的日益复杂,单材料部件已难以满足需求,这推动了采用多元材料组合以拓宽零件功能边界的丝粉混合定向能量沉积(Wire-Powder Hybrid Directed Energy Deposition,WP-DED)技术的发展。然而,对WP-DED成形工艺的全面理解仍...随着产品功能需求的日益复杂,单材料部件已难以满足需求,这推动了采用多元材料组合以拓宽零件功能边界的丝粉混合定向能量沉积(Wire-Powder Hybrid Directed Energy Deposition,WP-DED)技术的发展。然而,对WP-DED成形工艺的全面理解仍显不足,尤其是对其技术瓶颈和潜在问题的认知缺失,阻碍了该技术的进一步创新与广泛应用。鉴于此,深入探讨了WP-DED技术的核心运行机制,将其按送料方式分为双侧向送料、粉同轴与丝侧向送料、丝同轴与粉侧向送料和丝粉同轴送料4类,并系统性地梳理和归纳了这些多元化的材料输送机制。同时,回顾了WP-DED技术的演进历程与研究进展,详细阐述了4种送料方式WP-DED技术的演变、优劣对比、工艺探索以及沉积层组织与性能的研究等,旨在为读者提供清晰的技术发展脉络。此外,还指出了WP-DED技术在实践应用中面临的关键技术难题,如熔池流动控制、热历史管理、颗粒分布优化等,为后续科研与工程实践提供了明确方向。最后,展望了WP-DED技术的未来发展趋势,涉及材料开发、机制探索、过程优化和技术创新等方面,旨在激发更多关于该技术的创新思考与实际应用探索。展开更多
基金supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601)the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)
文摘A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.
基金supported by the National High Technology Research and Development Program of China(Grant No.2015AA016501)the National Natural Science Foundation of China(Grant No.61306129)
文摘In the process of high-k films fabrication, a novel multi deposition multi annealing （MDMA） technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing （PDA） times. The equivalent oxide thickness （EOT） decreases when the annealing time（s） change from 1 to 2. Furthermore, the characteristics of SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied systematically. The increase of the PDA time（s） from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.
文摘随着产品功能需求的日益复杂,单材料部件已难以满足需求,这推动了采用多元材料组合以拓宽零件功能边界的丝粉混合定向能量沉积(Wire-Powder Hybrid Directed Energy Deposition,WP-DED)技术的发展。然而,对WP-DED成形工艺的全面理解仍显不足,尤其是对其技术瓶颈和潜在问题的认知缺失,阻碍了该技术的进一步创新与广泛应用。鉴于此,深入探讨了WP-DED技术的核心运行机制,将其按送料方式分为双侧向送料、粉同轴与丝侧向送料、丝同轴与粉侧向送料和丝粉同轴送料4类,并系统性地梳理和归纳了这些多元化的材料输送机制。同时,回顾了WP-DED技术的演进历程与研究进展,详细阐述了4种送料方式WP-DED技术的演变、优劣对比、工艺探索以及沉积层组织与性能的研究等,旨在为读者提供清晰的技术发展脉络。此外,还指出了WP-DED技术在实践应用中面临的关键技术难题,如熔池流动控制、热历史管理、颗粒分布优化等,为后续科研与工程实践提供了明确方向。最后,展望了WP-DED技术的未来发展趋势,涉及材料开发、机制探索、过程优化和技术创新等方面,旨在激发更多关于该技术的创新思考与实际应用探索。
