Manganin piezoresistive gauges have been extensively used in dynamic stress measurement for decades.It is noted,however,that when used to measure transverse stresses,considerable strain effect is caused as the consequ...Manganin piezoresistive gauges have been extensively used in dynamic stress measurement for decades.It is noted,however,that when used to measure transverse stresses,considerable strain effect is caused as the consequence of change of electrical resistance resulted from bending of wires in the longitudinal-strain-experiencing sensing element of the gauge,a phenomenon discussed in this paper theoretically as well as experimentally.This effect yields unwanted signals to blend with output piezoresistive signals and is not negligible,hence decreases measurement accuracy sizably if not properly handled.To overcome this drawback,a new type of manganin transverse piezoresistive gauge has been developed by authors of this paper,which can reduce the resistance increment to acceptable low level so as to effectively bring the adverse effect under control.展开更多
A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrat...A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrates,and then covered by a layer of SiO_2 thin films by electron beamevaporation.Based on impedance match method of 'back configuration',the highest pressure measuredin Al target is 51.68 Gpa,the highest pressure in SiO_2 package is 35.396 Gpa and the piezoresistancecoefficient k is 0.026 Gpa^(-1).The upper limit and measure precision of sensor is improved.展开更多
基金Sponsored by the National Natural Science of China(10472014)
文摘Manganin piezoresistive gauges have been extensively used in dynamic stress measurement for decades.It is noted,however,that when used to measure transverse stresses,considerable strain effect is caused as the consequence of change of electrical resistance resulted from bending of wires in the longitudinal-strain-experiencing sensing element of the gauge,a phenomenon discussed in this paper theoretically as well as experimentally.This effect yields unwanted signals to blend with output piezoresistive signals and is not negligible,hence decreases measurement accuracy sizably if not properly handled.To overcome this drawback,a new type of manganin transverse piezoresistive gauge has been developed by authors of this paper,which can reduce the resistance increment to acceptable low level so as to effectively bring the adverse effect under control.
文摘A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrates,and then covered by a layer of SiO_2 thin films by electron beamevaporation.Based on impedance match method of 'back configuration',the highest pressure measuredin Al target is 51.68 Gpa,the highest pressure in SiO_2 package is 35.396 Gpa and the piezoresistancecoefficient k is 0.026 Gpa^(-1).The upper limit and measure precision of sensor is improved.
