The forward gated-diode R-G current method is used to monitor the F-N stressing-induced interface traps of NMOSFET/SOI.This simp le and accurate experiment method can directly give the interface trap density i nduced...The forward gated-diode R-G current method is used to monitor the F-N stressing-induced interface traps of NMOSFET/SOI.This simp le and accurate experiment method can directly give the interface trap density i nduced by F-N stressing effect for characterizing the device's reliability.For the measured NMOS/SOI device with a body structure,an expected power-law relati onship as Δ N it - t 0 4 between the pure F-N stressing-indu ced interface trap density and the accumulated stressing time is obtained.展开更多
Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give ...Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device’s hot carrier characteristics. For the tested device, an expected power law relationship of △Nit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.展开更多
The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-a...The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-aided design(TCAD)simulation.Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics.The gate oxide region is identified as the most sensitive position in planar devices,while trench and doubletrench structures exhibit no localized sensitive regions.Furthermore,the single-event susceptibility demonstrates strong depth dependence across all three structures,with enhanced vulnerability observed at greater ion penetration depths.展开更多
文摘The forward gated-diode R-G current method is used to monitor the F-N stressing-induced interface traps of NMOSFET/SOI.This simp le and accurate experiment method can directly give the interface trap density i nduced by F-N stressing effect for characterizing the device's reliability.For the measured NMOS/SOI device with a body structure,an expected power-law relati onship as Δ N it - t 0 4 between the pure F-N stressing-indu ced interface trap density and the accumulated stressing time is obtained.
基金Sponsored by Motorola-Peking University Joint Project.Contract No.:MSPSDDLCHINA-0004
文摘Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device’s hot carrier characteristics. For the tested device, an expected power law relationship of △Nit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.
基金National Key Research and Development Program of China(2023YFA1609000)National Natural Science Foundation of China(62474190,U22B2043,U2267210)。
文摘The single-event susceptibility of three silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)power devices structures(planar,trench and double trench)is researched by the technology computer-aided design(TCAD)simulation.Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics.The gate oxide region is identified as the most sensitive position in planar devices,while trench and doubletrench structures exhibit no localized sensitive regions.Furthermore,the single-event susceptibility demonstrates strong depth dependence across all three structures,with enhanced vulnerability observed at greater ion penetration depths.
