The forward gated-diode R-G current method is used to monitor the F-N stressing-induced interface traps of NMOSFET/SOI.This simp le and accurate experiment method can directly give the interface trap density i nduced...The forward gated-diode R-G current method is used to monitor the F-N stressing-induced interface traps of NMOSFET/SOI.This simp le and accurate experiment method can directly give the interface trap density i nduced by F-N stressing effect for characterizing the device's reliability.For the measured NMOS/SOI device with a body structure,an expected power-law relati onship as Δ N it - t 0 4 between the pure F-N stressing-indu ced interface trap density and the accumulated stressing time is obtained.展开更多
Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give ...Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device’s hot carrier characteristics. For the tested device, an expected power law relationship of △Nit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.展开更多
Neuromorphic devices have garnered significant attention as potential building blocks for energy-efficient hardware systems owing to their capacity to emulate the computational efficiency of the brain.In this regard,r...Neuromorphic devices have garnered significant attention as potential building blocks for energy-efficient hardware systems owing to their capacity to emulate the computational efficiency of the brain.In this regard,reservoir computing(RC)framework,which leverages straightforward training methods and efficient temporal signal processing,has emerged as a promising scheme.While various physical reservoir devices,including ferroelectric,optoelectronic,and memristor-based systems,have been demonstrated,many still face challenges related to compatibility with mainstream complementary metal oxide semiconductor(CMOS)integration processes.This study introduced a silicon-based schottky barrier metal-oxide-semiconductor field effect transistor(SB-MOSFET),which was fabricated under low thermal budget and compatible with back-end-of-line(BEOL).The device demonstrated short-term memory characteristics,facilitated by the modulation of schottky barriers and charge trapping.Utilizing these characteristics,a RC system for temporal data processing was constructed,and its performance was validated in a 5×4 digital classification task,achieving an accuracy exceeding 98%after 50 training epochs.Furthermore,the system successfully processed temporal signal in waveform classification and prediction tasks using time-division multiplexing.Overall,the SB-MOSFET's high compatibility with CMOS technology provides substantial advantages for large-scale integration,enabling the development of energy-efficient reservoir computing hardware.展开更多
文摘The forward gated-diode R-G current method is used to monitor the F-N stressing-induced interface traps of NMOSFET/SOI.This simp le and accurate experiment method can directly give the interface trap density i nduced by F-N stressing effect for characterizing the device's reliability.For the measured NMOS/SOI device with a body structure,an expected power-law relati onship as Δ N it - t 0 4 between the pure F-N stressing-indu ced interface trap density and the accumulated stressing time is obtained.
基金Sponsored by Motorola-Peking University Joint Project.Contract No.:MSPSDDLCHINA-0004
文摘Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device’s hot carrier characteristics. For the tested device, an expected power law relationship of △Nit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.
基金supported in part by the Chinese Academy of Sciences(No.XDA0330302)NSFC program(No.22127901)。
文摘Neuromorphic devices have garnered significant attention as potential building blocks for energy-efficient hardware systems owing to their capacity to emulate the computational efficiency of the brain.In this regard,reservoir computing(RC)framework,which leverages straightforward training methods and efficient temporal signal processing,has emerged as a promising scheme.While various physical reservoir devices,including ferroelectric,optoelectronic,and memristor-based systems,have been demonstrated,many still face challenges related to compatibility with mainstream complementary metal oxide semiconductor(CMOS)integration processes.This study introduced a silicon-based schottky barrier metal-oxide-semiconductor field effect transistor(SB-MOSFET),which was fabricated under low thermal budget and compatible with back-end-of-line(BEOL).The device demonstrated short-term memory characteristics,facilitated by the modulation of schottky barriers and charge trapping.Utilizing these characteristics,a RC system for temporal data processing was constructed,and its performance was validated in a 5×4 digital classification task,achieving an accuracy exceeding 98%after 50 training epochs.Furthermore,the system successfully processed temporal signal in waveform classification and prediction tasks using time-division multiplexing.Overall,the SB-MOSFET's high compatibility with CMOS technology provides substantial advantages for large-scale integration,enabling the development of energy-efficient reservoir computing hardware.
