摘要
本文较为详细地分析了SOIMOSFET的失真行为 .利用幂级数方法对不同结构包括部分耗尽PD、全耗尽FD和体接触BC的SOI器件的谐波失真进行了对比性的实验研究 .同时 ,在实验分析的基础上提出了描述失真行为的连续的SOIMOSFET失真模型 .该模型通过引入平滑函数和主要的影响失真的物理机制 ,使得模拟计算结果能够与实验结果较好的吻合 .本文所得到的结果可用于低失真的数模混合电路的设计 ,并对低失真电路的优化提供指导方向 .
The distortion behavior of Silicon On Insulator (SOI) MOSFET is systematically discussed in this paper.With Power series analysis method,the harmonic distortion of different configurations of SOI devices (PD,FD and BC) is experimentally investigated.At the same time,a continuous distortion model for SOI MOSFET is presented by including the main distortion causing mechanisms and the smoothing function.The accuracy of this model has been verified by reproducing the experimental data.The results can be used to evaluate the distortion behavior of mixed mode integrated circuit and serve as a guideline for the optimization of low distortion application.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2002年第2期232-235,共4页
Acta Electronica Sinica
基金
国家自然科学基金 (No .6991 0 1 61 992 )
