β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其...β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。展开更多
High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN fi...High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN films on 17 nm AlN/sapphire tem-plates using metal-organic chemical vapor deposition(MOCVD).Comprehensive characterization reveals significant advance-ments in crystal quality and uniformity.Atomic force microscopy(AFM)shows progressive surface roughness reduction during early growth stages,achieving stabilization at a root mean square(RMS)roughness of 0.216 nm within 3 min,confirming suc-cessful 2D growth mode.X-ray rocking curve(XRC)analysis indicates a marked reduction in the(0002)reflection full width at half maximum(FWHM),from 445 to 96 arcsec,evidencing effective dislocation annihilation.Transmission electron microscopy(TEM)demonstrates the elimination of edge dislocations near the AlN template interface.Stress analysis highlights the role of a highly compressive 17 nm AlN template(5.11 GPa)in facilitating threading dislocation bending and annihilation,yielding a final dislocation density of~1.5×10^(7) cm^(-2).Raman spectroscopy and XRC mapping confirm excellent uniformity of stress and crystal quality across the wafer.These findings demonstrate the feasibility of this method for producing high-quality,large-area,atomically flat AlN films,advancing applications in optoelectronics and power electronics.展开更多
对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光...对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光机理进行了探讨 ,认为蓝带为导带电子跃迁至受主能级的发光 ( e A发光 )。观察到降低 Ga N补偿度能提高 Ga N带边发射强度。展开更多
文摘β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
基金supported by National Key R&D Program of China(2022YFB3605100)the National Science Fund for Distinguished Young Scholars of China(62425408)+5 种基金the National Natural Science Foundation of China(62204241,U22A2084,and 62121005)Key Research and Development Projects of Jilin Provincial Science and Technology Development Plan(20240302027GX)the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program.
文摘High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN films on 17 nm AlN/sapphire tem-plates using metal-organic chemical vapor deposition(MOCVD).Comprehensive characterization reveals significant advance-ments in crystal quality and uniformity.Atomic force microscopy(AFM)shows progressive surface roughness reduction during early growth stages,achieving stabilization at a root mean square(RMS)roughness of 0.216 nm within 3 min,confirming suc-cessful 2D growth mode.X-ray rocking curve(XRC)analysis indicates a marked reduction in the(0002)reflection full width at half maximum(FWHM),from 445 to 96 arcsec,evidencing effective dislocation annihilation.Transmission electron microscopy(TEM)demonstrates the elimination of edge dislocations near the AlN template interface.Stress analysis highlights the role of a highly compressive 17 nm AlN template(5.11 GPa)in facilitating threading dislocation bending and annihilation,yielding a final dislocation density of~1.5×10^(7) cm^(-2).Raman spectroscopy and XRC mapping confirm excellent uniformity of stress and crystal quality across the wafer.These findings demonstrate the feasibility of this method for producing high-quality,large-area,atomically flat AlN films,advancing applications in optoelectronics and power electronics.
文摘对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光机理进行了探讨 ,认为蓝带为导带电子跃迁至受主能级的发光 ( e A发光 )。观察到降低 Ga N补偿度能提高 Ga N带边发射强度。
