摘要
β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
β-Ga_(2)O_(3) is a highly promising semiconductor material due to its ultra-wide bandgap,high critical breakdown field,and excellent Baliga's figure of merit.In recent years,it has demonstrated significant application potential in fields such as power electronics and deep ultraviolet photodetection.Metal-organic chemical vapor deposition (MOCVD) technology is an advantageous method for the industrialization of β-Ga_(2)O_(3),offering benefits such as high growth rates,precise control over film thickness,excellent film quality,and large-scale growth capabilities.Consequently,it has been widely utilized in the epitaxial growth of β-Ga_(2)O_(3).This article reviews the research on MOCVD homoepitaxial growth of β-Ga_(2)O_(3) along various common crystal orientations and presents the current status of MOCVD epitaxial growth of the promising β-(Al_(x)Ga_(1-x))_(2)O_(3).Finally,it concludes with main challenges in MOCVD-based growth of these two materials and offers an outlook for future developments.
作者
刘洋
何云龙
陈谷然
陆小力
郑雪峰
马晓华
郝跃
LIU Yang;HE Yunlong;CHEN Guran;LU Xiaoli;ZHENG Xuefeng;MA Xiaohua;HAO Yue(State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology,National Engineering Research Center of Wide Band-gap Semiconductor,Faculty of Integrated Circuit,Xidian University,Xi'an,710071,CHN;State Key Laboratory of Wide-bandgap Semiconductor Devices and Integrated Technology,Nanjing Electronic Devices Institute,Nanjing,210016,CHN)
出处
《固体电子学研究与进展》
2025年第1期1-15,共15页
Research & Progress of SSE
基金
国家自然科学基金资助项目(62474133,U2241220)
实验室开放基金项目(2413S111)
中央高校基本业务费资助项目(QTZX23019,ZDRC2002)。
