The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific ...The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific configuration of applied magnetics fields and current and can persist up to 20 K,much higher than the Ne'el temperature(T_(N)≈1.9 K).Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point,which changes the carrier concentration.展开更多
EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a t...EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a topological phase transition and a predicted quantum anomalous Hall effect(QAHE)approaching the two-dimensional(2D)limit.Yet,studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB_(6) are still scarce.In this work,EuB_(6) thin sheets with thicknesses ranging from 35μm to 180μm were successfully fabricated through careful mechanical polishing of high-quality EuB_(6) single crystals.The reduced thickness,temperature and magnetic field have a strong influence on the electronic transport properties,including the CNMR and carrier concentration of EuB_(6) thin sheets.As the thickness of EuB_(6) thin sheets decreases from 180μm to 35μm,the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K,while the CNMR ratio increases from-87.2%to-90.8%.Furthermore,the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4%at 30 K in a 35μm EuB_(6) thin sheet compared to the value reported for a 180μm thin sheet.Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB_(6) along with the temperature and magnetic field,which could provide a route to exploring the QAHE near the 2D limit in EuB_(6) and other topological semimetals.展开更多
Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-p...Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-power spintronic devices.Intriguingly,the rare earth tritelluride(RTe3)materials have attracted great attention due to their unique magnetic structure,exotic electronic properties,multiple charge density wave(CDW),and superconductivity under pressure.Here,we report the successful synthesis of high-quality DyTe_(3)single crystals using a self-flux method.DyTe_(3)shows an antiferromagnetic transition at 4.5 K and demonstrates the magnetic field-induced ferromagnetism.The high-quality DyTe_(3)single crystal demonstrates outstanding transport properties,featuring a high carrier mobility of approximately1.4×10^(4)cm^(2)·V^(-1)·s^(-1)and large linear magnetoresistance of 1300%.Furthermore,distinct Shubnikov-de Haas(SdH)oscillations are observed in DyTe_(3),revealing a small Fermi pocket and an effective mass of 0.24 me.Remarkably,the unconventional in-plane negative magnetoresistances appear along the a-axis below 2 T and c-axis until 9 T from 2 K to17 K,which are attributed to the complex helimagnetic structures caused by CDW coupling and weak single-ion anisotropy.Our findings offer a significant platform for understanding the complex magnetoresistance behavior and quantum transport effects in RTe3-type materials,holding great promise for advancing applications in electronic and spintronic devices.展开更多
Magnetoresistance(MR)is a pivotal transport phenomenon within the realm of condensed matter physics.In recent years,materials exhibiting extremely large unsaturated magnetoresistance(XMR),which are often potential top...Magnetoresistance(MR)is a pivotal transport phenomenon within the realm of condensed matter physics.In recent years,materials exhibiting extremely large unsaturated magnetoresistance(XMR),which are often potential topological materials,have garnered significant attention.In this study,we synthesized single crystals of ZrBi_(2) and performed electrical and specific heat measurements on them.The resistivity of ZrBi_(2) displays metallic behavior with a high residual resistance ratio.Notably,the MR of ZrBi_(2) reaches approximately 2.0×10^(3)%at 2 K and 16 T without saturation.Weak Shubnikov-de Haas oscillations with two frequencies were observed above 13.5 T,which correspond to 237 T and 663 T.Hall effect fitting yields nearly equal concentrations of electron and hole carriers with concentrations of approximately 10^(21)cm^(-3)and mobilities of approximately 5000 cm^(2)·V^(-1)·s^(-1)at 2 K.The XMR could be attributed to the electron-hole compensation with high mobility.展开更多
The intricate correlation between multiple degrees of freedom and physical properties is a fascinating area in solid state chemistry and condensed matter physics.Here,we report a quantum-magnetic system BaNi_(2)V_(2)O...The intricate correlation between multiple degrees of freedom and physical properties is a fascinating area in solid state chemistry and condensed matter physics.Here,we report a quantum-magnetic system BaNi_(2)V_(2)O_(8)(BNVO),in which the spin correlation was modulated by unusual oxidation state,leading to different magnetic behavior.The BNVO was modified with topochemical reduction(TR)to yield TR-BNVO with partially reduced valance state of Ni^(+)in the two-dimensional NiO_(6)-honeycomb lattice.Accordingly,the antiferromagnetic order is suppressed by the introduction of locally interposed Ni^(+)and oxygen vacancies,resulting in a ferromagnetic ground state with the transition temperature up to 710 K.A positive magnetoresistance(7.5%)was observed in the TR-BNVO at 40 K under 7 T.These findings show that topological reduction is a powerful approach to engineer low-dimensional materials and accelerate the discovery of new quantum magnetism.展开更多
The hysteresis of magnetoresistance observed in superconductors is of great interest due to its potential connectionwith unconventional superconductivity.In this study,we perform electrical transport measurements on k...The hysteresis of magnetoresistance observed in superconductors is of great interest due to its potential connectionwith unconventional superconductivity.In this study,we perform electrical transport measurements on kagome superconductorCsV_(3)Sb_(5)nanoflakes and uncover unusual hysteretic behavior of magnetoresistance in the superconducting state.This hysteresis can be induced by applying either a large DC or AC current at temperatures(T)well below the superconductingtransition temperature(T_(c)).As T approaches T_(c),similar weak hysteresis is also detected by applying a smallcurrent.Various scenarios are discussed,with particular focus on the effects of vortex pinning and the presence of timereversal-symmtery-breaking superconducting domains.Our findings support the latter,hinting at chiral superconductivityin kagome superconductors.展开更多
We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magne...We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.展开更多
Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor t...Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.展开更多
In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust again...In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.展开更多
Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at roo...Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at room temperature.However,how to obtain a large room-temperature negative MR effect in them remains to be studied.In this paper,by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side,we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment,but not in a static low magnetic field environment.Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory,we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field.This theoretical analytical model is further confirmed by regulating the geometry size of the device.Our work sheds light on the development of novel magnetic sensing,magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.展开更多
La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were stud...La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.展开更多
Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd a...Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd and Ag addition induce a decrease in resistivity and an increase in temperature at which the resistivity reaches its maximum. This is mainly due to the improvement of grain boundaries caused by the segregation of good conductive metal grains on the grain boundaries/surfaces. In addition, both Pd and Ag addition induce a large enhancement of room temperature magnetoresistance （RTMR）. Note that 27% molar ratio of Ag addition induces a large RTMR of about 70%, about ten times larger than pure LCBMO, whereas 27% molar ratio Pd addition brings a much larger RTMR of about 170%. The large enhancements of MR can be attributed to the decrease in resistivity of the samples caused by the good conductive metal. On the other hand, the polarization of Pd atoms near the Mn ions on the grain surfaces/boundaries plays a very im-portant role in the increase in MR, which induces a large number of spin clusters in Pd-added samples.展开更多
The samples of La0.80Sr0.15Ag0.05MnO3/x（CuO） （x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the sampies was detected by X-ray diffraction （XRD）, scanning e...The samples of La0.80Sr0.15Ag0.05MnO3/x（CuO） （x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the sampies was detected by X-ray diffraction （XRD）, scanning electron microscope （SEM） equipped with energy dispersive spectroscopy （EDS）, electric transport mechanism, and magnetoresistance enhancement, and the temperature stability of magnetoresistance of the samples was studied through resistivity-temperature （ρ-T） curves, ρ-T fitted curves, and magnetoresistance-temperature （MR-T） curves. The results indicate that ρ-T data can be fitted by the formula ρ = ρ0 ＋ AT^2 very well, and the electric transport mechanism of all the samples in metal-like area is the scattering of single magneton upon spin electron; the magnetoresistance of composite samples is far larger than that of the original material, and the MR peak value of the sample with x = 0.20 is nearly 4 times as large as that of the sample with x = 0; composite samples have comparatively good temperature stability of magnetoresistance in the temperature range of 200-260 K, and the magnetoresistance of the sample with x = 0.15 almost does not change with temperature and keeps at （5.03 ± 0.20） % in the temperature range of 210-260 K.展开更多
La_(0.67)Ca_(0.33)MnO_3)_x /(ZrO_2)_(1-x) (x is the volume fraction ratio) percolated composites were fabricated by combining La_(0.67)Ca_(0.33)MnO_3 (LCMO) powders with ZrO_2 particles, where LCMO powders were prepar...La_(0.67)Ca_(0.33)MnO_3)_x /(ZrO_2)_(1-x) (x is the volume fraction ratio) percolated composites were fabricated by combining La_(0.67)Ca_(0.33)MnO_3 (LCMO) powders with ZrO_2 particles, where LCMO powders were prepared by sol-gel process. Low field magnetoresistance ( LFMR ) is greatly enhanced at low temperature when the system is close to the metallic percolation threshold of x=0.4. The magnetoresistance ratio of ( LCMO)_(0.4) /( ZrO_2 )_(0.6) in a 10 mT magnetic field at 77 K is 7.8 %, about 7.12 times larger than that of pure LCMO compound. The enhancement of spin-dependent tunneling of electrons at the interfaces between LCMO and ZrO_2 grains is responsible for the enhanced LFMR. With increasing ZrO_2 addition, Curie temperature T_C decreases firstly and then remains constant at about 220 K when (x<60%), showing limited substitution effect of Zr ions on B sites.展开更多
The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding p...The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding peak resistivity increases, the Curie temperature decreases monotonically. The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude. The effects of substituting Gd can be explained in terms of the lattice effects. An irreversible MR behaviour was observed in Gd-substituting compounds. This effect became marked when the substituting amount of Gd was greater than 7%. A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.展开更多
The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentati...The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.展开更多
A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the sys...A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the system La_(1-x)(Sr_(1-y)Na_y)_xMnO_3 with unchanged Mn^(3+)/Mn^(4+) ratio through the doping of both monovalent and divalent elements at A site were studied through the measurements of X-ray diffraction(XRD) patterns,resistivity-temperature(ρ-T) curves and magnetoresistance-temperature(MR-T) curves.The results indicate that with the increase of Na doping amount,the peak value of MR increases,and it increases from 12.4% for y=0.2 to 50.6% for y=1.0 in the magnetic field B=0.8 T;ρ-T curves exhibit the double-peak phenomenon,which comes from the competition between the resistivity of surface phase and that of body phase;for the sample of y=0.8,MR increases slowly from 8.3% to 9.4% in the temperature range from 259 to 179 K,and MR is so stable in such a wide temperature range,which provides reference for the research on the temperature stability of MR.展开更多
A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6D...A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.展开更多
Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultra...Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner （〈 15 nm） NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.展开更多
The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, ...The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.展开更多
基金financially supported by the National Key R&D Program of China(No.2022YFA1402600)the National Natural Science Foundation of China(Nos.12304150 and 52161135108)support by the National Science Centre(Poland)(No.2021/40/Q/ST5/00066)。
文摘The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific configuration of applied magnetics fields and current and can persist up to 20 K,much higher than the Ne'el temperature(T_(N)≈1.9 K).Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point,which changes the carrier concentration.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant No.62488201)+1 种基金the Chinese Academy of Sciences(Grant Nos.XDB33030000 and YSBR-053)Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a topological phase transition and a predicted quantum anomalous Hall effect(QAHE)approaching the two-dimensional(2D)limit.Yet,studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB_(6) are still scarce.In this work,EuB_(6) thin sheets with thicknesses ranging from 35μm to 180μm were successfully fabricated through careful mechanical polishing of high-quality EuB_(6) single crystals.The reduced thickness,temperature and magnetic field have a strong influence on the electronic transport properties,including the CNMR and carrier concentration of EuB_(6) thin sheets.As the thickness of EuB_(6) thin sheets decreases from 180μm to 35μm,the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K,while the CNMR ratio increases from-87.2%to-90.8%.Furthermore,the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4%at 30 K in a 35μm EuB_(6) thin sheet compared to the value reported for a 180μm thin sheet.Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB_(6) along with the temperature and magnetic field,which could provide a route to exploring the QAHE near the 2D limit in EuB_(6) and other topological semimetals.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62488201 and 1240041502)the Ministry of Science and Technology of China(Grant No.2022YFA1204100)+1 种基金the Chinese Academy of Sciences(Grant No.XDB33030100)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-power spintronic devices.Intriguingly,the rare earth tritelluride(RTe3)materials have attracted great attention due to their unique magnetic structure,exotic electronic properties,multiple charge density wave(CDW),and superconductivity under pressure.Here,we report the successful synthesis of high-quality DyTe_(3)single crystals using a self-flux method.DyTe_(3)shows an antiferromagnetic transition at 4.5 K and demonstrates the magnetic field-induced ferromagnetism.The high-quality DyTe_(3)single crystal demonstrates outstanding transport properties,featuring a high carrier mobility of approximately1.4×10^(4)cm^(2)·V^(-1)·s^(-1)and large linear magnetoresistance of 1300%.Furthermore,distinct Shubnikov-de Haas(SdH)oscillations are observed in DyTe_(3),revealing a small Fermi pocket and an effective mass of 0.24 me.Remarkably,the unconventional in-plane negative magnetoresistances appear along the a-axis below 2 T and c-axis until 9 T from 2 K to17 K,which are attributed to the complex helimagnetic structures caused by CDW coupling and weak single-ion anisotropy.Our findings offer a significant platform for understanding the complex magnetoresistance behavior and quantum transport effects in RTe3-type materials,holding great promise for advancing applications in electronic and spintronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.12274440)the National Key R&D Program of China(Grant No.2022YFA1403903)the Synergetic Extreme Condition User Facility(SECUF)。
文摘Magnetoresistance(MR)is a pivotal transport phenomenon within the realm of condensed matter physics.In recent years,materials exhibiting extremely large unsaturated magnetoresistance(XMR),which are often potential topological materials,have garnered significant attention.In this study,we synthesized single crystals of ZrBi_(2) and performed electrical and specific heat measurements on them.The resistivity of ZrBi_(2) displays metallic behavior with a high residual resistance ratio.Notably,the MR of ZrBi_(2) reaches approximately 2.0×10^(3)%at 2 K and 16 T without saturation.Weak Shubnikov-de Haas oscillations with two frequencies were observed above 13.5 T,which correspond to 237 T and 663 T.Hall effect fitting yields nearly equal concentrations of electron and hole carriers with concentrations of approximately 10^(21)cm^(-3)and mobilities of approximately 5000 cm^(2)·V^(-1)·s^(-1)at 2 K.The XMR could be attributed to the electron-hole compensation with high mobility.
基金financially supported by the National Natural Science Foundation of China(NSFC,Nos.21875287,22090041)the Guangdong Basic and Applied Basic Research Foundation(No.2022B1515120014)。
文摘The intricate correlation between multiple degrees of freedom and physical properties is a fascinating area in solid state chemistry and condensed matter physics.Here,we report a quantum-magnetic system BaNi_(2)V_(2)O_(8)(BNVO),in which the spin correlation was modulated by unusual oxidation state,leading to different magnetic behavior.The BNVO was modified with topochemical reduction(TR)to yield TR-BNVO with partially reduced valance state of Ni^(+)in the two-dimensional NiO_(6)-honeycomb lattice.Accordingly,the antiferromagnetic order is suppressed by the introduction of locally interposed Ni^(+)and oxygen vacancies,resulting in a ferromagnetic ground state with the transition temperature up to 710 K.A positive magnetoresistance(7.5%)was observed in the TR-BNVO at 40 K under 7 T.These findings show that topological reduction is a powerful approach to engineer low-dimensional materials and accelerate the discovery of new quantum magnetism.
基金supported by the“Pioneer”and“Leading Goose”R&D Program of Zhejiang(Grant No.2024SDXHDX0007)the National Natural Science Foundation of China(Grant No.12474131)+4 种基金the China Postdoctoral Science Foundation(Grant Nos.2022M722845 and 2023T160586)the Zhejiang Provincial Natural Science Foundation of China for Distinguished Young Scholars(Grant No.LR23A040001)the Research Center for Industries of the Future(RCIF)at Westlake University(Grant No.WU2023C009)the National Key R&D Program of China(Grant Nos.2020YFA0308800 and 2022YFA1403400)the Beijing Natural Science Foundation(Grant No.Z210006).The authors thank the support provided by Dr.Chao Zhang from Instrumentation and Service Center for Physical Sciences at Westlake University.
文摘The hysteresis of magnetoresistance observed in superconductors is of great interest due to its potential connectionwith unconventional superconductivity.In this study,we perform electrical transport measurements on kagome superconductorCsV_(3)Sb_(5)nanoflakes and uncover unusual hysteretic behavior of magnetoresistance in the superconducting state.This hysteresis can be induced by applying either a large DC or AC current at temperatures(T)well below the superconductingtransition temperature(T_(c)).As T approaches T_(c),similar weak hysteresis is also detected by applying a smallcurrent.Various scenarios are discussed,with particular focus on the effects of vortex pinning and the presence of timereversal-symmtery-breaking superconducting domains.Our findings support the latter,hinting at chiral superconductivityin kagome superconductors.
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2023YFA1607403,2021YFA1600201,and 2022YFA1602603)the Natural Science Foundation of China (Grant Nos.U19A2093,U2032214,and U2032163)+5 种基金the Collaborative Innovation Program of Hefei Science Center,CAS (Grant No.2019HSC-CIP 001)the Youth Innovation Promotion Association of CAS (Grant No.2021117)the Natural Science Foundation of Anhui Province (No.1908085QA15)the HFIPS Director’s Fund (Grant No.YZJJQY202304)the CASHIPS Director’s Fund (Grant No.YZJJ2022QN36)supported by the High Magnetic Field Laboratory of Anhui Province。
文摘We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFA1403202)the National Natural Science Foundation of China(Grant Nos.NSFC-12074335,11974095,5177115,11974095,and 12188101)the Natural Science Foundation of Shaanxi Province of China(Grant No.2022JM-028).
文摘Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.
基金supported by the National Natural Science Foundation of China(Grant Nos.T2394475,T2394470,and 12174129)。
文摘In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.
基金Project supported by the Special Funding for Talents of Three Gorges University(Grant No.8230202)the National Natural Science Foundation of China(Grant No.12274258)National Key R&D Program of China(Grant No.2016YFA0401003).
文摘Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at room temperature.However,how to obtain a large room-temperature negative MR effect in them remains to be studied.In this paper,by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side,we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment,but not in a static low magnetic field environment.Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory,we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field.This theoretical analytical model is further confirmed by regulating the geometry size of the device.Our work sheds light on the development of novel magnetic sensing,magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.
基金supported by the Key Program of the National Natural Science Foundation of China (No. 19934003)the Grand Program of Natural Science Research of Anhui Education Department (No. ZD2007003-1)the Natural Science Research Program of Universities and Colleges of Anhui Province, China (Nos. KJ2008A19ZC, KJ2009B281Z, and KJ2009A053Z)
文摘La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.
文摘Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd and Ag addition induce a decrease in resistivity and an increase in temperature at which the resistivity reaches its maximum. This is mainly due to the improvement of grain boundaries caused by the segregation of good conductive metal grains on the grain boundaries/surfaces. In addition, both Pd and Ag addition induce a large enhancement of room temperature magnetoresistance （RTMR）. Note that 27% molar ratio of Ag addition induces a large RTMR of about 70%, about ten times larger than pure LCBMO, whereas 27% molar ratio Pd addition brings a much larger RTMR of about 170%. The large enhancements of MR can be attributed to the decrease in resistivity of the samples caused by the good conductive metal. On the other hand, the polarization of Pd atoms near the Mn ions on the grain surfaces/boundaries plays a very im-portant role in the increase in MR, which induces a large number of spin clusters in Pd-added samples.
基金financially supported by the Key Program of National Natural Science Foundation of China(No.19934003)the Program of Natural Science Foundation of Anhui Province(No.1308085MA11)+1 种基金the Key Programs of Natural Science Research of Anhui Education Department(Nos.KJ2013A245 and KJ2012Z404)the Open Projects of Anhui Key Laboratory of Spintronic and Nanometric Materials(Nos.2012YKF09,2012YKF10,and 2012YKF08)
文摘The samples of La0.80Sr0.15Ag0.05MnO3/x（CuO） （x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the sampies was detected by X-ray diffraction （XRD）, scanning electron microscope （SEM） equipped with energy dispersive spectroscopy （EDS）, electric transport mechanism, and magnetoresistance enhancement, and the temperature stability of magnetoresistance of the samples was studied through resistivity-temperature （ρ-T） curves, ρ-T fitted curves, and magnetoresistance-temperature （MR-T） curves. The results indicate that ρ-T data can be fitted by the formula ρ = ρ0 ＋ AT^2 very well, and the electric transport mechanism of all the samples in metal-like area is the scattering of single magneton upon spin electron; the magnetoresistance of composite samples is far larger than that of the original material, and the MR peak value of the sample with x = 0.20 is nearly 4 times as large as that of the sample with x = 0; composite samples have comparatively good temperature stability of magnetoresistance in the temperature range of 200-260 K, and the magnetoresistance of the sample with x = 0.15 almost does not change with temperature and keeps at （5.03 ± 0.20） % in the temperature range of 210-260 K.
文摘La_(0.67)Ca_(0.33)MnO_3)_x /(ZrO_2)_(1-x) (x is the volume fraction ratio) percolated composites were fabricated by combining La_(0.67)Ca_(0.33)MnO_3 (LCMO) powders with ZrO_2 particles, where LCMO powders were prepared by sol-gel process. Low field magnetoresistance ( LFMR ) is greatly enhanced at low temperature when the system is close to the metallic percolation threshold of x=0.4. The magnetoresistance ratio of ( LCMO)_(0.4) /( ZrO_2 )_(0.6) in a 10 mT magnetic field at 77 K is 7.8 %, about 7.12 times larger than that of pure LCMO compound. The enhancement of spin-dependent tunneling of electrons at the interfaces between LCMO and ZrO_2 grains is responsible for the enhanced LFMR. With increasing ZrO_2 addition, Curie temperature T_C decreases firstly and then remains constant at about 220 K when (x<60%), showing limited substitution effect of Zr ions on B sites.
基金This work was supported by the State Key Project of Funda-mental Research (G19980613010) the National Scientific and Technological Department of China.
文摘The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding peak resistivity increases, the Curie temperature decreases monotonically. The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude. The effects of substituting Gd can be explained in terms of the lattice effects. An irreversible MR behaviour was observed in Gd-substituting compounds. This effect became marked when the substituting amount of Gd was greater than 7%. A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.
文摘The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.
基金supported by the National Natural Foundation of China (No. 19934003)the Natural Science Research Key Program of Anhui Educational Committee (No. KJ2011A259)+2 种基金the Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-materials Research Program(No. 2010YKF01No. 2010YKF04)the Professors’ and Doctors’ Research Startup Foundation of Suzhou University (Nos. 2011jb01 and 2011jb02)
文摘A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the system La_(1-x)(Sr_(1-y)Na_y)_xMnO_3 with unchanged Mn^(3+)/Mn^(4+) ratio through the doping of both monovalent and divalent elements at A site were studied through the measurements of X-ray diffraction(XRD) patterns,resistivity-temperature(ρ-T) curves and magnetoresistance-temperature(MR-T) curves.The results indicate that with the increase of Na doping amount,the peak value of MR increases,and it increases from 12.4% for y=0.2 to 50.6% for y=1.0 in the magnetic field B=0.8 T;ρ-T curves exhibit the double-peak phenomenon,which comes from the competition between the resistivity of surface phase and that of body phase;for the sample of y=0.8,MR increases slowly from 8.3% to 9.4% in the temperature range from 259 to 179 K,and MR is so stable in such a wide temperature range,which provides reference for the research on the temperature stability of MR.
基金supported by the National Natural Foundation of China (No. 19934003) the Natural Science Research Key Program of Anhui Educational Committee (No. KJ2011A259)+3 种基金the Opening Program of Cultivating Base of Anhui Key Laboratory of Spintronics and Nanomaterials (Nos. 2010YKF04 2011YKF05)the Professors’and Doctors’Research Startup Foundation of Suzhou University (Nos. 2011jb01 2011jb02)
文摘A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.
基金supported by the National Science Foundation of China (Nos.50671008,50871014,and 50831002)
文摘Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner （〈 15 nm） NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.
基金financially supported by the National Natural Science Foundation of China (No. 19934003)the Key Program of Natural Science Foundation of Anhui Province (Nos. KJ2011A259 and KJ2013A245)+1 种基金the Program of Professors and Doctors' Research Startup Foundation of Suzhou College (Nos. 2011jb01 and 2011jb02)the Program of Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-materials Research (No. 2012YKF09)
文摘The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.
