Altermagnets,a class of unconventional antiferromagnets with non-relativistic spin-splitting,offer promising potential for antiferromagnetic spintronic devices.While many altermagnets are limited by either low magneti...Altermagnets,a class of unconventional antiferromagnets with non-relativistic spin-splitting,offer promising potential for antiferromagnetic spintronic devices.While many altermagnets are limited by either low magnetic transition temperatures or weak spin splitting,the recently discovered metal CrSb,with high N′eel temperature(T_(N)=710 K)and significant spin-splitting due to its unique spin space group,provides a robust platform for remarkable tunneling magnetoresistance(TMR)in collinear all-antiferromagnetic tunnel junctions(AATJs).This study systematically investigates the spin-polarized Fermi surface of CrSb and spin-dependent electron transport in CrSb-based AATJs.The CrSb/β-InSe/CrSb junction with a three-monolayer InSe barrier exhibits a TMR ratio of approximately 290%,with energy-dependent analysis revealing TMR ratios that may exceed 850%when considering the shift of the Fermi energy.We also demonstrate the angle-dependent TMR of CrSb-based AATJs by adjusting N′eel vector orientations.Our findings might provide strong theoretical support for CrSb as a versatile building block for all-antiferromagnetic memory devices.展开更多
The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific ...The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific configuration of applied magnetics fields and current and can persist up to 20 K,much higher than the Ne'el temperature(T_(N)≈1.9 K).Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point,which changes the carrier concentration.展开更多
EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a t...EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a topological phase transition and a predicted quantum anomalous Hall effect(QAHE)approaching the two-dimensional(2D)limit.Yet,studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB_(6) are still scarce.In this work,EuB_(6) thin sheets with thicknesses ranging from 35μm to 180μm were successfully fabricated through careful mechanical polishing of high-quality EuB_(6) single crystals.The reduced thickness,temperature and magnetic field have a strong influence on the electronic transport properties,including the CNMR and carrier concentration of EuB_(6) thin sheets.As the thickness of EuB_(6) thin sheets decreases from 180μm to 35μm,the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K,while the CNMR ratio increases from-87.2%to-90.8%.Furthermore,the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4%at 30 K in a 35μm EuB_(6) thin sheet compared to the value reported for a 180μm thin sheet.Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB_(6) along with the temperature and magnetic field,which could provide a route to exploring the QAHE near the 2D limit in EuB_(6) and other topological semimetals.展开更多
Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-p...Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-power spintronic devices.Intriguingly,the rare earth tritelluride(RTe3)materials have attracted great attention due to their unique magnetic structure,exotic electronic properties,multiple charge density wave(CDW),and superconductivity under pressure.Here,we report the successful synthesis of high-quality DyTe_(3)single crystals using a self-flux method.DyTe_(3)shows an antiferromagnetic transition at 4.5 K and demonstrates the magnetic field-induced ferromagnetism.The high-quality DyTe_(3)single crystal demonstrates outstanding transport properties,featuring a high carrier mobility of approximately1.4×10^(4)cm^(2)·V^(-1)·s^(-1)and large linear magnetoresistance of 1300%.Furthermore,distinct Shubnikov-de Haas(SdH)oscillations are observed in DyTe_(3),revealing a small Fermi pocket and an effective mass of 0.24 me.Remarkably,the unconventional in-plane negative magnetoresistances appear along the a-axis below 2 T and c-axis until 9 T from 2 K to17 K,which are attributed to the complex helimagnetic structures caused by CDW coupling and weak single-ion anisotropy.Our findings offer a significant platform for understanding the complex magnetoresistance behavior and quantum transport effects in RTe3-type materials,holding great promise for advancing applications in electronic and spintronic devices.展开更多
Magnetoresistance(MR)is a pivotal transport phenomenon within the realm of condensed matter physics.In recent years,materials exhibiting extremely large unsaturated magnetoresistance(XMR),which are often potential top...Magnetoresistance(MR)is a pivotal transport phenomenon within the realm of condensed matter physics.In recent years,materials exhibiting extremely large unsaturated magnetoresistance(XMR),which are often potential topological materials,have garnered significant attention.In this study,we synthesized single crystals of ZrBi_(2) and performed electrical and specific heat measurements on them.The resistivity of ZrBi_(2) displays metallic behavior with a high residual resistance ratio.Notably,the MR of ZrBi_(2) reaches approximately 2.0×10^(3)%at 2 K and 16 T without saturation.Weak Shubnikov-de Haas oscillations with two frequencies were observed above 13.5 T,which correspond to 237 T and 663 T.Hall effect fitting yields nearly equal concentrations of electron and hole carriers with concentrations of approximately 10^(21)cm^(-3)and mobilities of approximately 5000 cm^(2)·V^(-1)·s^(-1)at 2 K.The XMR could be attributed to the electron-hole compensation with high mobility.展开更多
La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were stud...La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.展开更多
Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd a...Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd and Ag addition induce a decrease in resistivity and an increase in temperature at which the resistivity reaches its maximum. This is mainly due to the improvement of grain boundaries caused by the segregation of good conductive metal grains on the grain boundaries/surfaces. In addition, both Pd and Ag addition induce a large enhancement of room temperature magnetoresistance （RTMR）. Note that 27% molar ratio of Ag addition induces a large RTMR of about 70%, about ten times larger than pure LCBMO, whereas 27% molar ratio Pd addition brings a much larger RTMR of about 170%. The large enhancements of MR can be attributed to the decrease in resistivity of the samples caused by the good conductive metal. On the other hand, the polarization of Pd atoms near the Mn ions on the grain surfaces/boundaries plays a very im-portant role in the increase in MR, which induces a large number of spin clusters in Pd-added samples.展开更多
The samples of La0.80Sr0.15Ag0.05MnO3/x（CuO） （x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the sampies was detected by X-ray diffraction （XRD）, scanning e...The samples of La0.80Sr0.15Ag0.05MnO3/x（CuO） （x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the sampies was detected by X-ray diffraction （XRD）, scanning electron microscope （SEM） equipped with energy dispersive spectroscopy （EDS）, electric transport mechanism, and magnetoresistance enhancement, and the temperature stability of magnetoresistance of the samples was studied through resistivity-temperature （ρ-T） curves, ρ-T fitted curves, and magnetoresistance-temperature （MR-T） curves. The results indicate that ρ-T data can be fitted by the formula ρ = ρ0 ＋ AT^2 very well, and the electric transport mechanism of all the samples in metal-like area is the scattering of single magneton upon spin electron; the magnetoresistance of composite samples is far larger than that of the original material, and the MR peak value of the sample with x = 0.20 is nearly 4 times as large as that of the sample with x = 0; composite samples have comparatively good temperature stability of magnetoresistance in the temperature range of 200-260 K, and the magnetoresistance of the sample with x = 0.15 almost does not change with temperature and keeps at （5.03 ± 0.20） % in the temperature range of 210-260 K.展开更多
La_(0.67)Ca_(0.33)MnO_3)_x /(ZrO_2)_(1-x) (x is the volume fraction ratio) percolated composites were fabricated by combining La_(0.67)Ca_(0.33)MnO_3 (LCMO) powders with ZrO_2 particles, where LCMO powders were prepar...La_(0.67)Ca_(0.33)MnO_3)_x /(ZrO_2)_(1-x) (x is the volume fraction ratio) percolated composites were fabricated by combining La_(0.67)Ca_(0.33)MnO_3 (LCMO) powders with ZrO_2 particles, where LCMO powders were prepared by sol-gel process. Low field magnetoresistance ( LFMR ) is greatly enhanced at low temperature when the system is close to the metallic percolation threshold of x=0.4. The magnetoresistance ratio of ( LCMO)_(0.4) /( ZrO_2 )_(0.6) in a 10 mT magnetic field at 77 K is 7.8 %, about 7.12 times larger than that of pure LCMO compound. The enhancement of spin-dependent tunneling of electrons at the interfaces between LCMO and ZrO_2 grains is responsible for the enhanced LFMR. With increasing ZrO_2 addition, Curie temperature T_C decreases firstly and then remains constant at about 220 K when (x<60%), showing limited substitution effect of Zr ions on B sites.展开更多
The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding p...The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding peak resistivity increases, the Curie temperature decreases monotonically. The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude. The effects of substituting Gd can be explained in terms of the lattice effects. An irreversible MR behaviour was observed in Gd-substituting compounds. This effect became marked when the substituting amount of Gd was greater than 7%. A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.展开更多
The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentati...The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.展开更多
A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the sys...A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the system La_(1-x)(Sr_(1-y)Na_y)_xMnO_3 with unchanged Mn^(3+)/Mn^(4+) ratio through the doping of both monovalent and divalent elements at A site were studied through the measurements of X-ray diffraction(XRD) patterns,resistivity-temperature(ρ-T) curves and magnetoresistance-temperature(MR-T) curves.The results indicate that with the increase of Na doping amount,the peak value of MR increases,and it increases from 12.4% for y=0.2 to 50.6% for y=1.0 in the magnetic field B=0.8 T;ρ-T curves exhibit the double-peak phenomenon,which comes from the competition between the resistivity of surface phase and that of body phase;for the sample of y=0.8,MR increases slowly from 8.3% to 9.4% in the temperature range from 259 to 179 K,and MR is so stable in such a wide temperature range,which provides reference for the research on the temperature stability of MR.展开更多
A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6D...A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.展开更多
Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultra...Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner （〈 15 nm） NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.展开更多
The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, ...The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.展开更多
Anisotropic magnetoresistance （AMR） is an important physical phenomenon that has broad application potential in many relevant fields. Thus, AMR is one of the most attractive research directions in material science t...Anisotropic magnetoresistance （AMR） is an important physical phenomenon that has broad application potential in many relevant fields. Thus, AMR is one of the most attractive research directions in material science to date. In this article, we summarize the recent advances in AMR, including traditional permalloy AMR, tunnel AMR, ballistic AMR, Coulomb blockade AMR, anomalous AMR, and antiferromagnetic AMR. The existing problems and possible challenges in developing more advanced AMR were briefly discussed, and future development trends and prospects were also speculated.展开更多
The samples ofLa8/9Sr1/45Na4/45MnO3 （LSNMO）/x/2（Sb2O3） were prepared by the solid-state reaction method. The electric transport properties and the temperature stabil-ity of magnetoresistance （MR） of the samples ...The samples ofLa8/9Sr1/45Na4/45MnO3 （LSNMO）/x/2（Sb2O3） were prepared by the solid-state reaction method. The electric transport properties and the temperature stabil-ity of magnetoresistance （MR） of the samples were studied through the measurements of X-ray diffraction patterns, resistivity-temperature （ρ-T） curves, mass magnetization-temperature （σ-T） curves, and magnetoresistance-temper-ature （MR-T） curves. The results indicate that the p-Tcurves of the original material LSNMO show two peaks, and the phenomenon of two peaks of ρ-T curves disappears for the composite samples, which can be explained by a competition between surface-phase resistivity induced by boundary-dependent scattering and body-phase resistivity induced by paramagnetism-ferromagnetism transition. For all the sam-ples in the low temperature range, MR increases continu-ously with the decrease of temperature, which shows a characteristic of low-field magnetoresistance. However, MR basically keeps the same in the high temperature range. The paramagnetism-ferromagnetism transition is observed in the high temperature range due to a composite between perov-skite manganite and insulator, which can enhance the tem-perature of MR appearance in the high temperature range and make it to appear near room temperature. For the sample with x = 0.12, MR remains constant at the value of 7.5 % in the temperature range of 300-260 K, which achieves a tem-perature stability of MR near room temperature. In addition,for the sample with x = 0.16, MR is above 6.8 % in the high temperature range of 318-252 K （△T = 66 K）. MR almost remains constant in this temperature range, which favors the practical application of MR.展开更多
Magnetocaloric and colossal magnetoresistance effects of the layered perovskite La 1.4 Sr 1.6 Mn 2 O 7 compound have been studied.A broad peak of magnetic entropy change （-△S M） is found above the Curie temperature...Magnetocaloric and colossal magnetoresistance effects of the layered perovskite La 1.4 Sr 1.6 Mn 2 O 7 compound have been studied.A broad peak of magnetic entropy change （-△S M） is found above the Curie temperature （T C =120 K）,which can be associated with the existence of two-dimensional short range ferromagnetic order.Additionally,the curvilinear shape of-△S M for layered perovskite is quite different from that of the Ln 1-x A x MnO 3 probably arising from magnetocrystalline anisotropy.At the same time,a wide peak of colossal magnetoresitance effect near T C is found in the layered provskite La 1.4 Sr 1.6 Mn 2 O 7.展开更多
We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling...We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling laws for a narrow range of temperatures near the critical point, two methods with connections to the renormalization group theory provide analytical descriptions of the magnetic properties for much wider temperature ranges. Based on this, an analytical formula is obtained for the temperature dependence of the low field magnetoresistance in the paramagnetic phase.展开更多
We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in mang...We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb：SrTio3 p-n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.T2394475,T2394470,T2394471,and 12174129)the China Postdoctoral Science Foundation(Grant No.2023M741269).
文摘Altermagnets,a class of unconventional antiferromagnets with non-relativistic spin-splitting,offer promising potential for antiferromagnetic spintronic devices.While many altermagnets are limited by either low magnetic transition temperatures or weak spin splitting,the recently discovered metal CrSb,with high N′eel temperature(T_(N)=710 K)and significant spin-splitting due to its unique spin space group,provides a robust platform for remarkable tunneling magnetoresistance(TMR)in collinear all-antiferromagnetic tunnel junctions(AATJs).This study systematically investigates the spin-polarized Fermi surface of CrSb and spin-dependent electron transport in CrSb-based AATJs.The CrSb/β-InSe/CrSb junction with a three-monolayer InSe barrier exhibits a TMR ratio of approximately 290%,with energy-dependent analysis revealing TMR ratios that may exceed 850%when considering the shift of the Fermi energy.We also demonstrate the angle-dependent TMR of CrSb-based AATJs by adjusting N′eel vector orientations.Our findings might provide strong theoretical support for CrSb as a versatile building block for all-antiferromagnetic memory devices.
基金financially supported by the National Key R&D Program of China(No.2022YFA1402600)the National Natural Science Foundation of China(Nos.12304150 and 52161135108)support by the National Science Centre(Poland)(No.2021/40/Q/ST5/00066)。
文摘The angular dependence of magnetoresistance(MR)in antiferromagnetic half-Heusler HoAuSn single crystals has been systematically studied.Negative MR,as large as~99%,is observed at 9 T,is not restricted to the specific configuration of applied magnetics fields and current and can persist up to 20 K,much higher than the Ne'el temperature(T_(N)≈1.9 K).Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point,which changes the carrier concentration.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant No.62488201)+1 种基金the Chinese Academy of Sciences(Grant Nos.XDB33030000 and YSBR-053)Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘EuB_(6),a magnetic topological semimetal,has attracted considerable attention in recent years due to its rich intriguing physical properties,including a colossal negative magnetoresistance(CNMR)ratio exceeding-80%,a topological phase transition and a predicted quantum anomalous Hall effect(QAHE)approaching the two-dimensional(2D)limit.Yet,studies of the influence of the dimensionality approaching 2D on the electronic transport properties of EuB_(6) are still scarce.In this work,EuB_(6) thin sheets with thicknesses ranging from 35μm to 180μm were successfully fabricated through careful mechanical polishing of high-quality EuB_(6) single crystals.The reduced thickness,temperature and magnetic field have a strong influence on the electronic transport properties,including the CNMR and carrier concentration of EuB_(6) thin sheets.As the thickness of EuB_(6) thin sheets decreases from 180μm to 35μm,the magnetization transition temperature and the corresponding suppressing temperature of the Kondo effect decrease from 15.2 K to 10.9 K,while the CNMR ratio increases from-87.2%to-90.8%.Furthermore,the weak antilocalization effect transits to a weak localization effect and the carrier concentration increases by 9.4%at 30 K in a 35μm EuB_(6) thin sheet compared to the value reported for a 180μm thin sheet.Our findings demonstrate an obvious tunable effect of the reduced dimensionality on the transport properties of EuB_(6) along with the temperature and magnetic field,which could provide a route to exploring the QAHE near the 2D limit in EuB_(6) and other topological semimetals.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62488201 and 1240041502)the Ministry of Science and Technology of China(Grant No.2022YFA1204100)+1 种基金the Chinese Academy of Sciences(Grant No.XDB33030100)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘Two-dimensional van der Waals(vdW)magnetic materials,characterized by their tunable magnetism,spin transport properties,and remarkable quantum effects,provide significant promise for the development of efficient,low-power spintronic devices.Intriguingly,the rare earth tritelluride(RTe3)materials have attracted great attention due to their unique magnetic structure,exotic electronic properties,multiple charge density wave(CDW),and superconductivity under pressure.Here,we report the successful synthesis of high-quality DyTe_(3)single crystals using a self-flux method.DyTe_(3)shows an antiferromagnetic transition at 4.5 K and demonstrates the magnetic field-induced ferromagnetism.The high-quality DyTe_(3)single crystal demonstrates outstanding transport properties,featuring a high carrier mobility of approximately1.4×10^(4)cm^(2)·V^(-1)·s^(-1)and large linear magnetoresistance of 1300%.Furthermore,distinct Shubnikov-de Haas(SdH)oscillations are observed in DyTe_(3),revealing a small Fermi pocket and an effective mass of 0.24 me.Remarkably,the unconventional in-plane negative magnetoresistances appear along the a-axis below 2 T and c-axis until 9 T from 2 K to17 K,which are attributed to the complex helimagnetic structures caused by CDW coupling and weak single-ion anisotropy.Our findings offer a significant platform for understanding the complex magnetoresistance behavior and quantum transport effects in RTe3-type materials,holding great promise for advancing applications in electronic and spintronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.12274440)the National Key R&D Program of China(Grant No.2022YFA1403903)the Synergetic Extreme Condition User Facility(SECUF)。
文摘Magnetoresistance(MR)is a pivotal transport phenomenon within the realm of condensed matter physics.In recent years,materials exhibiting extremely large unsaturated magnetoresistance(XMR),which are often potential topological materials,have garnered significant attention.In this study,we synthesized single crystals of ZrBi_(2) and performed electrical and specific heat measurements on them.The resistivity of ZrBi_(2) displays metallic behavior with a high residual resistance ratio.Notably,the MR of ZrBi_(2) reaches approximately 2.0×10^(3)%at 2 K and 16 T without saturation.Weak Shubnikov-de Haas oscillations with two frequencies were observed above 13.5 T,which correspond to 237 T and 663 T.Hall effect fitting yields nearly equal concentrations of electron and hole carriers with concentrations of approximately 10^(21)cm^(-3)and mobilities of approximately 5000 cm^(2)·V^(-1)·s^(-1)at 2 K.The XMR could be attributed to the electron-hole compensation with high mobility.
基金supported by the Key Program of the National Natural Science Foundation of China (No. 19934003)the Grand Program of Natural Science Research of Anhui Education Department (No. ZD2007003-1)the Natural Science Research Program of Universities and Colleges of Anhui Province, China (Nos. KJ2008A19ZC, KJ2009B281Z, and KJ2009A053Z)
文摘La0.5Sm0.2Sr0.3MnO3/（Ag2O）x/2 （x = 0.00, 0.04, 0.08, 0.25, 0.30） samples were prepared by the solid-state reaction method, and their transport behaviors, transport mechanism, and magnetoresistance effect were studied through the measurement and fitting of p-T curves. The results show that the element Ag takes part in reaction when the doping amount is small. Ag is mainly distributed at the grain boundary of the host material and is in metallic state when the doping amount is relatively large; then the system becomes a two-phase composite. A small amount of Ag doping can apparently increase grain-boundary magnetoresistance induced by the spin-dependent scattering. The resistivity of the sample doped with 30 mol% Ag is one order of magnitude smaller than that of low-doped samples, and its magnetoresistance in the magnetic field of 0.5 T and at 300 K is strengthened apparently reaching 9.4%, which is connected not only with the improvement of the grain-boundary structure of the host material but also with the decrease of material resistivity.
文摘Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd and Ag addition induce a decrease in resistivity and an increase in temperature at which the resistivity reaches its maximum. This is mainly due to the improvement of grain boundaries caused by the segregation of good conductive metal grains on the grain boundaries/surfaces. In addition, both Pd and Ag addition induce a large enhancement of room temperature magnetoresistance （RTMR）. Note that 27% molar ratio of Ag addition induces a large RTMR of about 70%, about ten times larger than pure LCBMO, whereas 27% molar ratio Pd addition brings a much larger RTMR of about 170%. The large enhancements of MR can be attributed to the decrease in resistivity of the samples caused by the good conductive metal. On the other hand, the polarization of Pd atoms near the Mn ions on the grain surfaces/boundaries plays a very im-portant role in the increase in MR, which induces a large number of spin clusters in Pd-added samples.
基金financially supported by the Key Program of National Natural Science Foundation of China(No.19934003)the Program of Natural Science Foundation of Anhui Province(No.1308085MA11)+1 种基金the Key Programs of Natural Science Research of Anhui Education Department(Nos.KJ2013A245 and KJ2012Z404)the Open Projects of Anhui Key Laboratory of Spintronic and Nanometric Materials(Nos.2012YKF09,2012YKF10,and 2012YKF08)
文摘The samples of La0.80Sr0.15Ag0.05MnO3/x（CuO） （x = 0, 0.05, 0.10, 0.15, 0.20） were prepared by the solid-state reaction method, and the structure of the sampies was detected by X-ray diffraction （XRD）, scanning electron microscope （SEM） equipped with energy dispersive spectroscopy （EDS）, electric transport mechanism, and magnetoresistance enhancement, and the temperature stability of magnetoresistance of the samples was studied through resistivity-temperature （ρ-T） curves, ρ-T fitted curves, and magnetoresistance-temperature （MR-T） curves. The results indicate that ρ-T data can be fitted by the formula ρ = ρ0 ＋ AT^2 very well, and the electric transport mechanism of all the samples in metal-like area is the scattering of single magneton upon spin electron; the magnetoresistance of composite samples is far larger than that of the original material, and the MR peak value of the sample with x = 0.20 is nearly 4 times as large as that of the sample with x = 0; composite samples have comparatively good temperature stability of magnetoresistance in the temperature range of 200-260 K, and the magnetoresistance of the sample with x = 0.15 almost does not change with temperature and keeps at （5.03 ± 0.20） % in the temperature range of 210-260 K.
文摘La_(0.67)Ca_(0.33)MnO_3)_x /(ZrO_2)_(1-x) (x is the volume fraction ratio) percolated composites were fabricated by combining La_(0.67)Ca_(0.33)MnO_3 (LCMO) powders with ZrO_2 particles, where LCMO powders were prepared by sol-gel process. Low field magnetoresistance ( LFMR ) is greatly enhanced at low temperature when the system is close to the metallic percolation threshold of x=0.4. The magnetoresistance ratio of ( LCMO)_(0.4) /( ZrO_2 )_(0.6) in a 10 mT magnetic field at 77 K is 7.8 %, about 7.12 times larger than that of pure LCMO compound. The enhancement of spin-dependent tunneling of electrons at the interfaces between LCMO and ZrO_2 grains is responsible for the enhanced LFMR. With increasing ZrO_2 addition, Curie temperature T_C decreases firstly and then remains constant at about 220 K when (x<60%), showing limited substitution effect of Zr ions on B sites.
基金This work was supported by the State Key Project of Funda-mental Research (G19980613010) the National Scientific and Technological Department of China.
文摘The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding peak resistivity increases, the Curie temperature decreases monotonically. The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude. The effects of substituting Gd can be explained in terms of the lattice effects. An irreversible MR behaviour was observed in Gd-substituting compounds. This effect became marked when the substituting amount of Gd was greater than 7%. A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.
文摘The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.
基金supported by the National Natural Foundation of China (No. 19934003)the Natural Science Research Key Program of Anhui Educational Committee (No. KJ2011A259)+2 种基金the Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-materials Research Program(No. 2010YKF01No. 2010YKF04)the Professors’ and Doctors’ Research Startup Foundation of Suzhou University (Nos. 2011jb01 and 2011jb02)
文摘A series of the samples La_(1-x)(Sr_(1-y)Na_y)_xMnO_3(y=0.0,0.2,0.4,0.6,0.8,1.0) were prepared by the solid-state reaction method.Magnetoresistance enhancement and temperature stability of magnetoresistance in the system La_(1-x)(Sr_(1-y)Na_y)_xMnO_3 with unchanged Mn^(3+)/Mn^(4+) ratio through the doping of both monovalent and divalent elements at A site were studied through the measurements of X-ray diffraction(XRD) patterns,resistivity-temperature(ρ-T) curves and magnetoresistance-temperature(MR-T) curves.The results indicate that with the increase of Na doping amount,the peak value of MR increases,and it increases from 12.4% for y=0.2 to 50.6% for y=1.0 in the magnetic field B=0.8 T;ρ-T curves exhibit the double-peak phenomenon,which comes from the competition between the resistivity of surface phase and that of body phase;for the sample of y=0.8,MR increases slowly from 8.3% to 9.4% in the temperature range from 259 to 179 K,and MR is so stable in such a wide temperature range,which provides reference for the research on the temperature stability of MR.
基金supported by the National Natural Foundation of China (No. 19934003) the Natural Science Research Key Program of Anhui Educational Committee (No. KJ2011A259)+3 种基金the Opening Program of Cultivating Base of Anhui Key Laboratory of Spintronics and Nanomaterials (Nos. 2010YKF04 2011YKF05)the Professors’and Doctors’Research Startup Foundation of Suzhou University (Nos. 2011jb01 2011jb02)
文摘A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.
基金supported by the National Science Foundation of China (Nos.50671008,50871014,and 50831002)
文摘Ta/NiFe/Ta ultrathin films with and without nano-oxide layers （NOLs） were prepared by magnetron sputtering followed by a vacuum annealing process. The influence of NOLs on the magnetoresistance （MR） ratio of ultrathin permalloy films was studied. The results show that the influence of grain size and textures on the MR ratio becomes weak when the thickness of the NiFe layer is below 15 nm. A higher MR ratio was observed for the thinner （〈 15 nm） NiFe film with NOLs. The MR ratio of a 10 nm NiFe film can be remarkably enhanced by NOLs. The enhanced MR ratio for these ultrathin films can be attributed to the enhanced specular reflection of conduction electrons.
基金financially supported by the National Natural Science Foundation of China (No. 19934003)the Key Program of Natural Science Foundation of Anhui Province (Nos. KJ2011A259 and KJ2013A245)+1 种基金the Program of Professors and Doctors' Research Startup Foundation of Suzhou College (Nos. 2011jb01 and 2011jb02)the Program of Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-materials Research (No. 2012YKF09)
文摘The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.
基金financially supported by the National Natural Science Foundation of China (Nos. 51071023 and 51101047)the Natural Science Foundation of Hainan Province (No. 512114)+1 种基金the Ph.D. Programs Foundation of Ministry of Education (No. 20120006130002)Program for Changjiang Scholars and Innovative Research Team in University
文摘Anisotropic magnetoresistance （AMR） is an important physical phenomenon that has broad application potential in many relevant fields. Thus, AMR is one of the most attractive research directions in material science to date. In this article, we summarize the recent advances in AMR, including traditional permalloy AMR, tunnel AMR, ballistic AMR, Coulomb blockade AMR, anomalous AMR, and antiferromagnetic AMR. The existing problems and possible challenges in developing more advanced AMR were briefly discussed, and future development trends and prospects were also speculated.
基金financially supported by the National Natural Science Foundation of China(No.19934003)the Natural Science Foundation of the Education Bureau of Anhui Province,China(Nos.KJ2011A259 and KJ2012Z404)+1 种基金Anhui Key Laboratory of Spintronics and Nano-materials Program(Nos.2010YKF01 and 2010YKF04)the Professors’and Doctors’ Research Startup Foundation of Suzhou University(Nos.2011jb01 and 2010jb02)
文摘The samples ofLa8/9Sr1/45Na4/45MnO3 （LSNMO）/x/2（Sb2O3） were prepared by the solid-state reaction method. The electric transport properties and the temperature stabil-ity of magnetoresistance （MR） of the samples were studied through the measurements of X-ray diffraction patterns, resistivity-temperature （ρ-T） curves, mass magnetization-temperature （σ-T） curves, and magnetoresistance-temper-ature （MR-T） curves. The results indicate that the p-Tcurves of the original material LSNMO show two peaks, and the phenomenon of two peaks of ρ-T curves disappears for the composite samples, which can be explained by a competition between surface-phase resistivity induced by boundary-dependent scattering and body-phase resistivity induced by paramagnetism-ferromagnetism transition. For all the sam-ples in the low temperature range, MR increases continu-ously with the decrease of temperature, which shows a characteristic of low-field magnetoresistance. However, MR basically keeps the same in the high temperature range. The paramagnetism-ferromagnetism transition is observed in the high temperature range due to a composite between perov-skite manganite and insulator, which can enhance the tem-perature of MR appearance in the high temperature range and make it to appear near room temperature. For the sample with x = 0.12, MR remains constant at the value of 7.5 % in the temperature range of 300-260 K, which achieves a tem-perature stability of MR near room temperature. In addition,for the sample with x = 0.16, MR is above 6.8 % in the high temperature range of 318-252 K （△T = 66 K）. MR almost remains constant in this temperature range, which favors the practical application of MR.
基金supported by the National Natural Science Foundation of China (Nos. 50331040 and 60171043)
文摘Magnetocaloric and colossal magnetoresistance effects of the layered perovskite La 1.4 Sr 1.6 Mn 2 O 7 compound have been studied.A broad peak of magnetic entropy change （-△S M） is found above the Curie temperature （T C =120 K）,which can be associated with the existence of two-dimensional short range ferromagnetic order.Additionally,the curvilinear shape of-△S M for layered perovskite is quite different from that of the Ln 1-x A x MnO 3 probably arising from magnetocrystalline anisotropy.At the same time,a wide peak of colossal magnetoresitance effect near T C is found in the layered provskite La 1.4 Sr 1.6 Mn 2 O 7.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61425015,11474330 and 11374337the National Basic Research Program of China under Grant Nos 2012CB921703 and 2015CB921102the Chinese Academy of Sciences
文摘We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling laws for a narrow range of temperatures near the critical point, two methods with connections to the renormalization group theory provide analytical descriptions of the magnetic properties for much wider temperature ranges. Based on this, an analytical formula is obtained for the temperature dependence of the low field magnetoresistance in the paramagnetic phase.
基金supported by the National Natural Science Foundation of Chinathe National Basic Research Program of China(Grant Nos.2012CB922003,2011CBA00102,and 2009CB929502)
文摘We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb：SrTio3 p-n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles.
