The present study reports the magnetizations and magneto-transport properties of PrFel_xNixO3 thin films grown by pulsed laser ablation technique on LaA103 snbstrates. From DC M/H plots of these films, weak ferromagne...The present study reports the magnetizations and magneto-transport properties of PrFel_xNixO3 thin films grown by pulsed laser ablation technique on LaA103 snbstrates. From DC M/H plots of these films, weak ferromagnetism or ferrimagnetism behaviors are observed. With Ni substitution, reduction in saturation magnetization is also seen. With Ni doping, variations in saturation field （Hs）, coercive field （Hc）, Weiss temperature （0）, and effective magnetic moment （Pelf） are seen. A small change of magnetoresitance with application of higher field is observed. Various essential parameters like density of state （Nf） at Fermi level, Mott＇s characteristic temperature （To）, and activation energy （Ea） in the presence of and in the absence of magnetic field are calculated. The present observed magnetic properties are related to the change of Fe-O bond length （causing an overlap between the oxygen p orbital and iron d orbital） and the deviation of the Fe-O-Fe angle from 180~. Reduction of magnetic domain after Ni doping is also explored to explain the present observed magnetic behavior of the system. The influence of doping on various transport properties in these thin films indicates a distortion in the lattice structure and single particle band width, owing to stress-induced reduction in unit cell volume.展开更多
There is a long-standing confusion concerning the physical origin of the anomalous resistivity peak in transition metal pentatelluride HfTe5. Several mechanisms, such as the formation of charge density wave or polaron...There is a long-standing confusion concerning the physical origin of the anomalous resistivity peak in transition metal pentatelluride HfTe5. Several mechanisms, such as the formation of charge density wave or polaron, have been proposed, but so far no conclusive evidence has been presented. In this work, we investigate the unusual temperature dependence of magneto-transport properties in HfTe5. It is found that a three-dimensional topological Dirac semimetal state emerges only at around Tp （at which the resistivity shows a pronounced peak）, as manifested by a large negative magnetoresistance. This accidental Dirac semimetal state mediates the topological quantum phase transition between the two distinct weak and strong topological insulator phases in HfTe5. Our work not only provides the first evidence of a temperature-induced critical topological phase transition inHfTe5 but also gives a reasonable explanation on the long-lasting question.展开更多
We have investigated the magneto-transport properties of an off-stoichiometric full-Heusler alloy Co_2MnAl single-crystalline film. The Co_(1.65)Mn_(1.35)Al(CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs sub...We have investigated the magneto-transport properties of an off-stoichiometric full-Heusler alloy Co_2MnAl single-crystalline film. The Co_(1.65)Mn_(1.35)Al(CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs substrate exhibits perpendicular magnetic anisotropy. The resistivity of the CMA film increases with the temperature T decreasing from 300 to 5 K, showing a semiconducting-like transport behavior. Different activation energies are found in three temperature regions with transition temperatures of 35 and 110 K. In the meanwhile, the remanent magnetization can be described by T^(3/2) and T^2 laws in the corresponding medium and high T ranges, respectively. The transition at around 110 K could be attributed to the ferromagnetism evolving from localized to itinerant state. The Curie temperature of the CMA film is estimated to be ～640 K. The intrinsic anomalous Hall conductivity of ～55 Ω^(-1) cm^(-1) is obtained, which is almost twenty times smaller than that of Co_2MnAl.展开更多
Magneto-transport properties of insulating bulk states in Bi（111） films are systematically investigated under the parallel field （BⅡ）. We find that the magnetotransport of the Bll field is a more powerful tool to...Magneto-transport properties of insulating bulk states in Bi（111） films are systematically investigated under the parallel field （BⅡ）. We find that the magnetotransport of the Bll field is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance （MR） up to 20% in the BⅡ field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR（BⅡ） from magnetic induced boundary scattering appears in the semimetal films. As the thickness is reduced to 1Ohm, the positive MR（BⅡ） is induced by weak anti-localization from the surface states.展开更多
Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based qubits.The varying compressive strains within these quantum wells profoundly influence the physical characteristics of...Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based qubits.The varying compressive strains within these quantum wells profoundly influence the physical characteristics of the qubits,yet this factor remains largely unexplored,driving our research endeavor.In this study,we utilized RP-CVD(Reduced Pressure Chemical Vapor Deposition)to grow Ge quantum wells with varied compressive strain,proposing growth schemes for lightly-strained(ε∥=-0.43%)QW(quantum well),standard-strained(ε∥=-0.61%)QW,and heavily-strained(ε∥=-1.19%)QW.Through comprehensive material characterization,particularly employing the low-temperature magneto-transport measurements,we derived the percolation densities ranging from 4.7×10^(10) to 14.2×10^(10) cm^(-2) and mobilities from 3.382×10^(5) to 7.301×10^(5) cm^(2)∙V^(-1)∙s^(-1).Combined with the first-principles calculations,our analysis delves into the trends in effective mass and percolation density at low temperatures,shedding light on the impact of quantum effects on band structures and the interplay between structural components and wave functions.This research offers a comprehensive investigation into the intrinsic mechanisms governing complex multi-strained quantum wells,spanning growth,characterization,and computational perspectives,thereby establishing a strategy for the growth of high-quality strained quantum wells.展开更多
Recently, the layered transition metal dichalcogenide 1 T MoTe2 has attracted considerable attention due to its non-saturating magnetoresistance, type-II Weyl semimetal properties, superconductivity, and potential can...Recently, the layered transition metal dichalcogenide 1 T MoTe2 has attracted considerable attention due to its non-saturating magnetoresistance, type-II Weyl semimetal properties, superconductivity, and potential candidate for twodimensional（2 D） topological insulator in the single-and few-layer limit. Here in this work, we perform systematic transport measurements on thin flakes of MoTe2 prepared by mechanical exfoliation. We find that MoTe2 flakes are superconducting and have an onset superconducting transition temperature Tc up to 5.3 K, which significantly exceeds that of its bulk counterpart. The in-plane upper critical field(Hc2||) is much higher than the Pauli paramagnetic limit, implying that the MoTe2 flakes have Zeeman-protected Ising superconductivity. Furthermore, the Tc and Hc2|| can be tuned by up to 320 mK and 400 mT by applying a gate voltage. Our result indicates that MoTe2 flake is a good candidate for studying exotic superconductivity with nontrivial topological properties.展开更多
In this paper we report design of one virtual instrument for the measurement of resistance as a function of temperature. The program has been developed using the National Instruments’ graphical programming language ...In this paper we report design of one virtual instrument for the measurement of resistance as a function of temperature. The program has been developed using the National Instruments’ graphical programming language ‘LabVIEW’ and has been run for the measurement of magnetoresistance of some colossal magnetoresistive (CMR) compounds, .展开更多
We investigate bias and different barrier thicknesses effects on quantities related to spin and charge currents in MgO-based magnetic tunnel junctions. Using the non-Equilibrium Green＇s function formalism, we demonst...We investigate bias and different barrier thicknesses effects on quantities related to spin and charge currents in MgO-based magnetic tunnel junctions. Using the non-Equilibrium Green＇s function formalism, we demonstrate that the in-plane and out-of-plane components of the spin-transfer torque have asymmetric and symmetric behaviors respectively. Magneto-resistance also decreases with increasing barrier thickness. The Landau–Lifshits–Gilbert equation describes the dynamics of the magnetization made by spin transfer torque. Increasing in spin current above its critical value or smaller the magnet reduces the switching time which is major result for making of new memory devices.展开更多
文摘The present study reports the magnetizations and magneto-transport properties of PrFel_xNixO3 thin films grown by pulsed laser ablation technique on LaA103 snbstrates. From DC M/H plots of these films, weak ferromagnetism or ferrimagnetism behaviors are observed. With Ni substitution, reduction in saturation magnetization is also seen. With Ni doping, variations in saturation field （Hs）, coercive field （Hc）, Weiss temperature （0）, and effective magnetic moment （Pelf） are seen. A small change of magnetoresitance with application of higher field is observed. Various essential parameters like density of state （Nf） at Fermi level, Mott＇s characteristic temperature （To）, and activation energy （Ea） in the presence of and in the absence of magnetic field are calculated. The present observed magnetic properties are related to the change of Fe-O bond length （causing an overlap between the oxygen p orbital and iron d orbital） and the deviation of the Fe-O-Fe angle from 180~. Reduction of magnetic domain after Ni doping is also explored to explain the present observed magnetic behavior of the system. The influence of doping on various transport properties in these thin films indicates a distortion in the lattice structure and single particle band width, owing to stress-induced reduction in unit cell volume.
基金Supported by the National Basic Research Program of China under Grant Nos 2015CB921303 and 2013CB921700the National Key Research Program of China under Grant No 2016YFA0300604the'Strategic Priority Research Program(B)'of the Chinese Academy of Sciences under Grant No XDB07020100
文摘There is a long-standing confusion concerning the physical origin of the anomalous resistivity peak in transition metal pentatelluride HfTe5. Several mechanisms, such as the formation of charge density wave or polaron, have been proposed, but so far no conclusive evidence has been presented. In this work, we investigate the unusual temperature dependence of magneto-transport properties in HfTe5. It is found that a three-dimensional topological Dirac semimetal state emerges only at around Tp （at which the resistivity shows a pronounced peak）, as manifested by a large negative magnetoresistance. This accidental Dirac semimetal state mediates the topological quantum phase transition between the two distinct weak and strong topological insulator phases in HfTe5. Our work not only provides the first evidence of a temperature-induced critical topological phase transition inHfTe5 but also gives a reasonable explanation on the long-lasting question.
基金supported by the Ministry of Science and Technology under Grant Nos.2015CB921500,2017YFB0405701the National Natural Science Foundation of China under Grant Nos.U1632264 and 11704374
文摘We have investigated the magneto-transport properties of an off-stoichiometric full-Heusler alloy Co_2MnAl single-crystalline film. The Co_(1.65)Mn_(1.35)Al(CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs substrate exhibits perpendicular magnetic anisotropy. The resistivity of the CMA film increases with the temperature T decreasing from 300 to 5 K, showing a semiconducting-like transport behavior. Different activation energies are found in three temperature regions with transition temperatures of 35 and 110 K. In the meanwhile, the remanent magnetization can be described by T^(3/2) and T^2 laws in the corresponding medium and high T ranges, respectively. The transition at around 110 K could be attributed to the ferromagnetism evolving from localized to itinerant state. The Curie temperature of the CMA film is estimated to be ～640 K. The intrinsic anomalous Hall conductivity of ～55 Ω^(-1) cm^(-1) is obtained, which is almost twenty times smaller than that of Co_2MnAl.
基金Supported by the Fundamental Research Funds for the Central Universities,and the Research Funds of Renmin University of China under Grant No 10XNF086
文摘Magneto-transport properties of insulating bulk states in Bi（111） films are systematically investigated under the parallel field （BⅡ）. We find that the magnetotransport of the Bll field is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance （MR） up to 20% in the BⅡ field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR（BⅡ） from magnetic induced boundary scattering appears in the semimetal films. As the thickness is reduced to 1Ohm, the positive MR（BⅡ） is induced by weak anti-localization from the surface states.
基金supported by the Innovation Program for Quantum Science and Technology (Project ID.2021ZD0302301)the National Natural Science Foundation of China (Grant No.6240033549).
文摘Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based qubits.The varying compressive strains within these quantum wells profoundly influence the physical characteristics of the qubits,yet this factor remains largely unexplored,driving our research endeavor.In this study,we utilized RP-CVD(Reduced Pressure Chemical Vapor Deposition)to grow Ge quantum wells with varied compressive strain,proposing growth schemes for lightly-strained(ε∥=-0.43%)QW(quantum well),standard-strained(ε∥=-0.61%)QW,and heavily-strained(ε∥=-1.19%)QW.Through comprehensive material characterization,particularly employing the low-temperature magneto-transport measurements,we derived the percolation densities ranging from 4.7×10^(10) to 14.2×10^(10) cm^(-2) and mobilities from 3.382×10^(5) to 7.301×10^(5) cm^(2)∙V^(-1)∙s^(-1).Combined with the first-principles calculations,our analysis delves into the trends in effective mass and percolation density at low temperatures,shedding light on the impact of quantum effects on band structures and the interplay between structural components and wave functions.This research offers a comprehensive investigation into the intrinsic mechanisms governing complex multi-strained quantum wells,spanning growth,characterization,and computational perspectives,thereby establishing a strategy for the growth of high-quality strained quantum wells.
基金Project supported by the Guangdong Innovative and Entrepreneurial Research Team Program,China(Grant No.2016ZT06D348)the National Natural Science Foundation of China(Grant No.11874193)the Shenzhen Fundamental Subject Research Program,China(Grant Nos.JCYJ20170817110751776 and JCYJ20170307105434022)
文摘Recently, the layered transition metal dichalcogenide 1 T MoTe2 has attracted considerable attention due to its non-saturating magnetoresistance, type-II Weyl semimetal properties, superconductivity, and potential candidate for twodimensional（2 D） topological insulator in the single-and few-layer limit. Here in this work, we perform systematic transport measurements on thin flakes of MoTe2 prepared by mechanical exfoliation. We find that MoTe2 flakes are superconducting and have an onset superconducting transition temperature Tc up to 5.3 K, which significantly exceeds that of its bulk counterpart. The in-plane upper critical field(Hc2||) is much higher than the Pauli paramagnetic limit, implying that the MoTe2 flakes have Zeeman-protected Ising superconductivity. Furthermore, the Tc and Hc2|| can be tuned by up to 320 mK and 400 mT by applying a gate voltage. Our result indicates that MoTe2 flake is a good candidate for studying exotic superconductivity with nontrivial topological properties.
文摘In this paper we report design of one virtual instrument for the measurement of resistance as a function of temperature. The program has been developed using the National Instruments’ graphical programming language ‘LabVIEW’ and has been run for the measurement of magnetoresistance of some colossal magnetoresistive (CMR) compounds, .
文摘We investigate bias and different barrier thicknesses effects on quantities related to spin and charge currents in MgO-based magnetic tunnel junctions. Using the non-Equilibrium Green＇s function formalism, we demonstrate that the in-plane and out-of-plane components of the spin-transfer torque have asymmetric and symmetric behaviors respectively. Magneto-resistance also decreases with increasing barrier thickness. The Landau–Lifshits–Gilbert equation describes the dynamics of the magnetization made by spin transfer torque. Increasing in spin current above its critical value or smaller the magnet reduces the switching time which is major result for making of new memory devices.
