Infrared detection technology has greatly expanded the ability of mankind to study the earth and the universe. In recent years, the demand for long-wavelength infrared detectors is increasing for their advantages in e...Infrared detection technology has greatly expanded the ability of mankind to study the earth and the universe. In recent years, the demand for long-wavelength infrared detectors is increasing for their advantages in exploring the earth and the universe. A variety of long-wavelength infrared detectors have been made based on thermal resistive effect, photoelectric effect, etc., in the past few decades. Remarkable achievements have been made in infrared materials, device fabrication,readout circuit, and device package. However, high performance long-wavelength infrared detectors, especially those for large format long-wavelength infrared detector focus plane array, are still unsatisfactory. Low noise, high detectivity, and large format long-wavelength infrared detector is necessary to satisfy space-based application requirements.展开更多
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.展开更多
A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation ...A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon,and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation.The fabricated prototype device exhibits an excellent photoelectric response performance.With a direct current(DC)bias voltage of-2.3 V,the device detectivity to blackbody irradiation is as high as 5×10^(13)cm·Hz^(1/2)/W,which corresponds to a device responsivity of nearly 4.6 A/W,showing their potential applications in infrared detection,infrared astrophysics,and extraterrestrial life science.In particular,the developed device preparation process is compatible with that for the CMOS-circuit,which greatly reduces the manufacturing cost.展开更多
利用宇宙线缪子对物体成像需要确定缪子的径迹,而对缪子的击中点进行精确定位是缪子径迹重建的关键。当前主流的缪子径迹探测系统需要搭配多路电子学通道才能对缪子的击中点进行精确定位,此类探测系统的构造复杂且成本高昂。为实现简便...利用宇宙线缪子对物体成像需要确定缪子的径迹,而对缪子的击中点进行精确定位是缪子径迹重建的关键。当前主流的缪子径迹探测系统需要搭配多路电子学通道才能对缪子的击中点进行精确定位,此类探测系统的构造复杂且成本高昂。为实现简便、低成本且高精度的缪子径迹探测系统设计,本研究基于Geant4软件,对无切割式的方形和圆形塑料闪烁体耦合硅光电倍增器(Silicon Photonmultipliers,SiPMs)的探测器进行模拟研究,使用SiPM收集的光子数和触发SiPM响应的时间作为特征参数,采用人工智能回归算法作为缪子定位的方法。模拟结果表明:以光子数作为特征参数的回归算法中,长短时间记忆(Long Short Term Memory,LSTM)算法在三种回归算法中的精度最高;在LSTM算法下,探测器上表面耦合12个SiPM的位置分辨率可达到厘米级别;当使用光子数和触发时间作为特征参数时,在探测器侧边仅耦合6个SiPM的位置分辨率同样能达到厘米级别,且与大面积塑料闪烁体四角耦合光电倍增管(Photomultiplier Tube,PMT)的探测器在实验中对缪子定位得到的结果吻合。本研究使用LSTM回归算法作为缪子定位算法,提出的在塑料闪烁体侧边耦合6个SiPM的探测器系统结构简便、制造成本低且定位精度达到厘米级别。展开更多
综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构H...综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构Hg Cd Te红外探测器的模拟和分析结果.理论分析和实验研制数据均显示这种新型亚波长人工微结构结构具有很好的陷光特性,在提高长波红外探测器性能方面具有潜在应用前景.展开更多
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51502337)the Fund from China Academy of Space Technology
文摘Infrared detection technology has greatly expanded the ability of mankind to study the earth and the universe. In recent years, the demand for long-wavelength infrared detectors is increasing for their advantages in exploring the earth and the universe. A variety of long-wavelength infrared detectors have been made based on thermal resistive effect, photoelectric effect, etc., in the past few decades. Remarkable achievements have been made in infrared materials, device fabrication,readout circuit, and device package. However, high performance long-wavelength infrared detectors, especially those for large format long-wavelength infrared detector focus plane array, are still unsatisfactory. Low noise, high detectivity, and large format long-wavelength infrared detector is necessary to satisfy space-based application requirements.
基金supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104)the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
文摘The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.
基金the National Natural Science Foundation of China(Grant Nos.11933006,61805060,and 61290304).
文摘A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon,and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation.The fabricated prototype device exhibits an excellent photoelectric response performance.With a direct current(DC)bias voltage of-2.3 V,the device detectivity to blackbody irradiation is as high as 5×10^(13)cm·Hz^(1/2)/W,which corresponds to a device responsivity of nearly 4.6 A/W,showing their potential applications in infrared detection,infrared astrophysics,and extraterrestrial life science.In particular,the developed device preparation process is compatible with that for the CMOS-circuit,which greatly reduces the manufacturing cost.
文摘尽管长波红外成像技术在陆地遥感、天文学等应用中至关重要,但其面临着来自压倒性热背景辐射的根本性挑战。这种背景光子通量常常将传统探测器推向其背景限制性能(Background-Limited Performance,BLIP)的极限。此时主要的限制因素并非探测器固有的噪声,而是背景本身的散粒噪声。本文论证了一个关键的分类,以区分两种表面相似但本质迥异的探测架构——差分探测器和微分探测器。根据探测器的应用和实现途径可知,传统差分探测器的背景光电流为可探测的信号差异设置了一个由背景决定的阈值,而微分探测器则是一种在物理感知层面直接对目标物理量的差异进行测量的器件:只有微弱的差值信号被积分,导致极大量的累加采样,因此可将信噪比提升至前所未有的水平。特别介绍了基于量子阱红外光电探测器(Quantum Well Infrared Photodetector,QWIP)的微分探测技术路径。QWIP以其极低的暗电流、精准的电学可控性和内禀的光谱选择性,为实现高性能长波红外微分探测器提供了理想的物理基础,并已在实验中取得显著进展。最后利用费雪信息理论和克拉默--拉奥约束为微分探测器提供了严格的理论支撑。
文摘利用宇宙线缪子对物体成像需要确定缪子的径迹,而对缪子的击中点进行精确定位是缪子径迹重建的关键。当前主流的缪子径迹探测系统需要搭配多路电子学通道才能对缪子的击中点进行精确定位,此类探测系统的构造复杂且成本高昂。为实现简便、低成本且高精度的缪子径迹探测系统设计,本研究基于Geant4软件,对无切割式的方形和圆形塑料闪烁体耦合硅光电倍增器(Silicon Photonmultipliers,SiPMs)的探测器进行模拟研究,使用SiPM收集的光子数和触发SiPM响应的时间作为特征参数,采用人工智能回归算法作为缪子定位的方法。模拟结果表明:以光子数作为特征参数的回归算法中,长短时间记忆(Long Short Term Memory,LSTM)算法在三种回归算法中的精度最高;在LSTM算法下,探测器上表面耦合12个SiPM的位置分辨率可达到厘米级别;当使用光子数和触发时间作为特征参数时,在探测器侧边仅耦合6个SiPM的位置分辨率同样能达到厘米级别,且与大面积塑料闪烁体四角耦合光电倍增管(Photomultiplier Tube,PMT)的探测器在实验中对缪子定位得到的结果吻合。本研究使用LSTM回归算法作为缪子定位算法,提出的在塑料闪烁体侧边耦合6个SiPM的探测器系统结构简便、制造成本低且定位精度达到厘米级别。
文摘综述了近几年来亚波长陷光结构Hg Cd Te红外探测器研究进展.系统介绍了一种结合有限元方法与时域有限差分方法对红外探测器的"光""电"特性进行联合模拟和设计方法,以及基于这种新的数值模拟方法对亚波长人工微结构Hg Cd Te红外探测器的模拟和分析结果.理论分析和实验研制数据均显示这种新型亚波长人工微结构结构具有很好的陷光特性,在提高长波红外探测器性能方面具有潜在应用前景.
