The garnet-type electrolytes such as Ta-doped Li7La3Zr2Ol2 （LLZTO） have been viewed as the promising electrolytes for solid-state lithium batteries, but it exhibits problem of high interfacial resistance （1960 Ω&#...The garnet-type electrolytes such as Ta-doped Li7La3Zr2Ol2 （LLZTO） have been viewed as the promising electrolytes for solid-state lithium batteries, but it exhibits problem of high interfacial resistance （1960 Ω·cm^2） and short circuit when being cycled in Li/LLZTO/Li cells at the current density above 0.5 mA·cm^-2. Introduction of intermediate layers in between lithium and LLZTO is helpful for decreasing the interfacial resistance and suppressing the growth of lithium dendrites. In this work, three kinds of intermediate layers of Au, Nb and Si with the thickness of 100 nm were prepared. Although the interfacial resistance with the Au layer decreases from 1960 to 32 Ω·cm^2, the cells can only cycle for 0.67 h at 0.5 mA·cm^-2, related to the Au peeled off from the LLZTO. The Nb layers lead to the initial interfacial resistance of 14 Ω·cm^2, while showing extension of cycle time to 50 h with the increase in interracial resistance due to the formation of the resistive Li-Nb-O phase. The Si layers induce the interfacial resistance as low as 5 Ω·cm^2 and the cycles as long as 120 h, which is attributed to the improvement in electrical contact between Li and electrolyte as well as the maintenance of conductive interface during cycles.展开更多
In this work, diamond-like carbon （DLC） films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition （PEUMS-PVD） and microwa...In this work, diamond-like carbon （DLC） films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition （MW-ECRPECVD） techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy （AFM）. With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio ID/IG increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp^3-bond carbon density reducing, resulted in the peak values of hardness （H） and elastic modulus （E）. Silicon addition promoted the formation of sp^3 bonding and reduced the hardness. The incorporated Si atoms substituted sp^2- bond carbon atoms in ring structures, which promoted the formation of sp^3-bond. The structural transition from C-C to C-Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.展开更多
A field monitoring program was carried out to record the slope failure process of a landfill with multiple intermediate covering layers.The monitored items include the leachate level,the surface horizontal displacemen...A field monitoring program was carried out to record the slope failure process of a landfill with multiple intermediate covering layers.The monitored items include the leachate level,the surface horizontal displacement and the deep lateral displacement.Based on the monitoring data,analysis was carried out to verify the stability control effects of leachate drainage on the top layer,leachate drainage in different layers,and near-slope leachate drainage.The results show that the maximum slip area is 34 760 m 2 and the average surface horizontal displacement of the 10th platform is 1.77 m.Dumping near the slope is the main reason for the instability.The closer to the dumping area,the greater the degree of slip and the more significantly the leachate level rises.Affected by the intermediate covering layers,the failure mode is the local sliding inside the landfill,and the effect of near-slope leachate drainage on the stability control is obvious.展开更多
In the multilayer film-substrate system,thermal stress concentration and stress mutations cause film buckling,delamination and cracking,leading to device failure.In this paper,we investigated a multilayer film system ...In the multilayer film-substrate system,thermal stress concentration and stress mutations cause film buckling,delamination and cracking,leading to device failure.In this paper,we investigated a multilayer film system composed of a substrate and three film layers.The thermal stress distribution inside the structure was calculated by the finite element method,revealing significant thermal stress differences between the layers.This is mainly due to the mismatch of the coefficient of thermal expansion between materials.Different materials respond differently to changes in external temperature,leading to compression between layers.There are obvious thermal stress concentration points at the corners of the base layer and the transition layer,which is due to the sudden change of the shape at the geometric section of the structure,resulting in a sudden increase in local stress.To address this issue,we chamfered the substrate and added an intermediate layer between the substrate and the transition layer to assess whether these modifications could reduce or eliminate the thermal stress concentration points and extend the service life of the multilayer structure.The results indicate that chamfering and adding the intermediate layer effectively reduce stress discontinuities and mitigate thermal stress concentration points,thereby improving interlayer bonding strength.展开更多
This work is devoted to the development of a low cost dimensionally stable anode with high oxygen evolution catalytic activity for practical applications.For this purpose,a Ti/SnO_(x)/MnO_(2) anode was fabricated thro...This work is devoted to the development of a low cost dimensionally stable anode with high oxygen evolution catalytic activity for practical applications.For this purpose,a Ti/SnO_(x)/MnO_(2) anode was fabricated through an innovative strategy involving Sn electrodeposition,oxidation,and MnO_(2)-layer preparation.The structure of the anode was characterized,and the oxygen evolution performance was evaluated in a H_(2)SO_(4) solution.The results show that compared with the Ti/SnO_(2)/MnO_(2) anode prepared by the conventional brushing-annealing process,the Ti/SnO_(x)/MnO_(2) anode fabricated through the innovative procedure exhibits a lower oxygen evolution potential and a nearly 40%longer accelerated lifespan.The superior oxygen evolution performance of the Ti/SnO_(x)/MnO_(2) anode is attributed to the distinctive SnO_(x) intermediate layer fabricated through Sn electrodeposition followed by oxidation,which indicates the great potential of the anode as a dimensionally stable anode for metal electrowinning and hydrogen production by electrolysis,etc.展开更多
SnO2intermediate layers were coated on the titanium(Ti)substrate by thermal decomposition.Scanning electronmicroscope(SEM)and X-ray diffraction(XRD)results show that uniform SnO2intermediate layers with rutile crystal...SnO2intermediate layers were coated on the titanium(Ti)substrate by thermal decomposition.Scanning electronmicroscope(SEM)and X-ray diffraction(XRD)results show that uniform SnO2intermediate layers with rutile crystal structure weresuccessfully achieved.According to the results of linear sweep voltammetry(LSV),oxygen evolution potential(OEP)of theTi/SnO2/MnO2electrodes decreases with increasing SnO2content,indicating that the electro-catalytic oxidation activity of theelectrode increases.Accelerated service life tests results demonstrate that SnO2intermediate layer can improve the service life of theTi/SnO2/MnO2electrode.As the content of SnO2intermediate layer increases,the cell voltage and the energy consumption decreaseapparently.展开更多
Al2O3 and La2O3 layers were coated respectively on a FeCrAl alloy foil by a dip-coating technique and used as the second support for the active LaMnAl11O19 hexaaluminate （HA） phase in a metallic monolithic catalyst....Al2O3 and La2O3 layers were coated respectively on a FeCrAl alloy foil by a dip-coating technique and used as the second support for the active LaMnAl11O19 hexaaluminate （HA） phase in a metallic monolithic catalyst. A sample without an intermediate layer was employed for comparison. The properties and performances of the catalyst were examined with X-ray diffraction （XRD）, scanning electron microscopy （SEM）, ultrasonic vibration and thermal shock techniques. Methane catalytic combustion was performed to evaluate the activity of the catalyst. The results showed that the activity and adhesion of the HA to the alloy foil could be improved with the introduction of the intermediate layer. Al2O3 provided a strong adhesion, while La2O3 weakened the interaction between the active component and alloy foil. For the activity, the catalysts made with the two different intermediate materials also showed difference.展开更多
Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT) AlN intermediate layer was investigated. High resolutio...Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT) AlN intermediate layer was investigated. High resolution X-ray resolution diffraction (HRXRD) shows that the crystalline quality of thick GaN layer was improved compared with the template. As confirmed by atomic force microscopy (AFM) observations, the surface morphology of AlN intermediate layer helps to improve the nucleation of GaN epilayer. Photoluminescence (PL) spectra measurement shows its high optical quality and low compressive stress, and micro Raman measurement confirms the latter result. Thus, the deposition of the LT-AlN interlayer has promoted the growth of an HVPE-GaN layer with an excellent crystalline quality.展开更多
GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electro...GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM）, and photo- luminescence （PL） spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthe- sizing GaN nanostructures is achieved.展开更多
We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for in...We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for inverted tan- dem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell （3.15%）. The open-circuit voltage of the tandem cell （1.18 V） approaches double that of the single cell （0.61 V）.展开更多
By formation of an intermediate semiconductor layer （ISL） with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An arr...By formation of an intermediate semiconductor layer （ISL） with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method （TLM） test patterns is formed on N-wells created by P＋ ion implantation into Si-faced p-type 4H- SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance pc as low as 4.23×10-5Ω·cm2 is achieved after annealing in N2 at 800 ℃ for 3 min, which is much lower than that （〉 900℃） in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge＋ ion implantations.展开更多
In this study,the oxidation behavior of Ti42Al5Mn,Ti42Al5Mn0.5 W,Ti42Al5Mn0.5W0.1B,and Ti42Al5Mn0.8 W was investigated at 800℃.Due to the inability to form a dense protective Al2O_(3) layer,Ti42Al5Mn suffered severe ...In this study,the oxidation behavior of Ti42Al5Mn,Ti42Al5Mn0.5 W,Ti42Al5Mn0.5W0.1B,and Ti42Al5Mn0.8 W was investigated at 800℃.Due to the inability to form a dense protective Al2O_(3) layer,Ti42Al5Mn suffered severe spallation during oxidation at 800℃and the mass gain was significant.The intermediate layer between the scale and the substrate was first composed of Laves/Z phase but changed toα2/Z phase with prolonged oxidation.The intermediate layer with high Ti/Al ratio favors the forma-tion of a thick Al2O_(3)+TiO_(2) mixed layer in the oxide scale which is prone to initiate cracks and cause the spalling of oxides.The doping of W in TiO_(2) effectively inhibited its generation and promoted the for-mation of a dense Al2O_(3) layer,resulting in a significant improvement in the oxidation resistance of the alloy.Compared to Ti42Al5Mn alloy,Ti42Al5Mn0.8 W showed no spallation after 300 h cyclic oxidation and the kinetic curve changed from liner law to parabolic law.The intermediate layer of Ti42Al5Mn0.8 W alloy was composed of a single Laves phase and remained unchanged even after 1000 h oxidation at 800℃,offering a favorable basis for the generation of a stable protective oxide layer in the alloy.The addi-tion of 0.1 at.%B to Ti42Al5Mn0.5 W alloy refined its microstructure and further improved its spallation resistance to a level close to that of Ti42Al5Mn0.8 W alloy.展开更多
Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of f...Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.展开更多
Energy for space vehicles in low Earth orbit(LEO) is mainly generated by solar arrays, and the service time of the vehicles is controlled by the lifetime of these arrays, which depends mainly on the lifetime of the in...Energy for space vehicles in low Earth orbit(LEO) is mainly generated by solar arrays, and the service time of the vehicles is controlled by the lifetime of these arrays, which depends mainly on the lifetime of the interconnects. To increase the service life of LEO satellites, molybdenum/platinum/silver(Mo/Pt/Ag) laminated metal matrix composite(LMMC) interconnectors are widely used in place of Mo/Ag LMMC and Ag interconnectors in solar arrays. A 2D thermal-electrical-mechanical coupled axisymmetric model was established to simulate the behavior of the parallel gap resistance welding(PGRW) process for solar cells and Mo/Pt/Ag composite interconnectors using the commercial software ANSYS. The direct multicoupled PLANE223 element and the contact pair elements TARGE169 and CONTA172 were employed. A transitional meshing method was applied to solve the meshing problem due to the ultrathin(1 μm) intermediate Pt layer. A comparison of the analysis results with the experimental results revealed that the best parameters were 60 W, 60 ms, and 0.0138 MPa. The voltage and current predicted by the finite element method agreed well with the experimental results. This study contributes to a further understanding of the mechanism of PGRW and provides guidance for finite element simulation of the process of welding with an ultrathin interlayer.展开更多
Diamond-like carbon （DLC） films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition （PEU...Diamond-like carbon （DLC） films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapor deposition （MW-ECR PECVD） techniques. The effect of sil- icon dopant on the structure, morphology, nanomechanical properties and electrochemical be- havior of DLC films were investigated by Raman spectroscopy, nano-indentation, atomic force microscopy （AFM） and potentiodynamic method and electrochemical impedance spectroscopy （EIS）. It showed that the incorporated silicon atoms substituted sp2-bonded carbon atoms in the ring structures, promoting the formation of sp3-bonds. The structural transition from C-C to C-Si bonds resulted in the relaxation of the residual stress, leading to the decrease in films hardness. The DLC films with Si/SiC intermediate layers led to significant improvement in the corrosion resistance of the stainless steel substrate due to effective isolation and good chemical inertness of the DLC films.展开更多
Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo...Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.展开更多
Knowledge of nepheloid layers is important to improve the understanding of physical,geological,and sedimentary processes from continental shelf to abyssal environments.We had not tried to study the nepheloid layers in...Knowledge of nepheloid layers is important to improve the understanding of physical,geological,and sedimentary processes from continental shelf to abyssal environments.We had not tried to study the nepheloid layers in a hydrate-associated tank until unexpected results occurred.Tank experimental results show that gas eruptions triggered intermediate nepheloid layers.Thus,we proposed a new mechanism of intermediate nepheloid layer generation by eruptions.The intermediate nepheloid layers were generated in uniform-density fluid,which indicated that stratified fluid is not a necessary condition for intermediate nepheloid layers.Sufficient space for advection and an oblique slope for detachment are the key ingredients for intermediate nepheloid layer generation by eruptions.Our experiments also offer a new experimental evidence for bottom nepheloid layer generation by earthquakes.Given the scale effects of laboratory experiment,it is important to determine whether submarine volcanic eruption or hydrate-associated venting causes intermediate nepheloid layer in the nature.展开更多
Two methods used to grow adherent coatings, roughening of the surface for mechanical interlocking and the use of chemically compatible interlayers having intermediate thermal expansion coefficients are analyzed numeri...Two methods used to grow adherent coatings, roughening of the surface for mechanical interlocking and the use of chemically compatible interlayers having intermediate thermal expansion coefficients are analyzed numerically with the aid of phase diagram. Calculations indicate that more roughness and smaller periodicity of the substrate surface will increase the interfacial area and thus enhance the adherence strength of the coating. The phase diagram shows that an intermediate layer with a proper composition gradient from the substrate to the film will relax the thermal stress at the interface effectively.展开更多
In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and...In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate reflector layer.展开更多
Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back conta...Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back contact influence the PV performances of Sb_(2)Se_(3)solar cells.Hence,optimization of back contact characteristics and absorber orientation are crucial steps in raising the power conversion efficiency(PCE)of Sb_(2)Se_(3)solar cells.In this work,MoO2was introduced as an intermediate layer(IL)in Sb_(2)Se_(3)solar cells,and comparative investigations were conducted.The growth of(211)-oriented Sb_(2)Se_(3)with large grains was facilitated by introducing the MoO2IL with suitable thickness.The MoO2IL substantially lowered the back contact barrier and prevented the formation of voids at the back contact,which reduced the thickness of the MoSe2interface layer,inhibited carrier recombination,and minimized bulk and interfacial defects in devices.Subsequently,significant optimization enhanced the open-circuit voltage(VOC)of solar cells from 0.481 V to 0.487 V,short-circuit current density(JSC)from 23.81 m A/cm^(2)to 29.29 m A/cm^(2),and fill factor from 50.28%to 57.10%,which boosted the PCE from 5.75%to 8.14%.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.51532002 and 51771222)the National Basic Research Program of China(No.2014CB921004)+1 种基金the Natural Science Foundation of Shandong Province(No.ZR201702180185)‘‘Taishan Talent Scholar’’ Supports
文摘The garnet-type electrolytes such as Ta-doped Li7La3Zr2Ol2 （LLZTO） have been viewed as the promising electrolytes for solid-state lithium batteries, but it exhibits problem of high interfacial resistance （1960 Ω·cm^2） and short circuit when being cycled in Li/LLZTO/Li cells at the current density above 0.5 mA·cm^-2. Introduction of intermediate layers in between lithium and LLZTO is helpful for decreasing the interfacial resistance and suppressing the growth of lithium dendrites. In this work, three kinds of intermediate layers of Au, Nb and Si with the thickness of 100 nm were prepared. Although the interfacial resistance with the Au layer decreases from 1960 to 32 Ω·cm^2, the cells can only cycle for 0.67 h at 0.5 mA·cm^-2, related to the Au peeled off from the LLZTO. The Nb layers lead to the initial interfacial resistance of 14 Ω·cm^2, while showing extension of cycle time to 50 h with the increase in interracial resistance due to the formation of the resistive Li-Nb-O phase. The Si layers induce the interfacial resistance as low as 5 Ω·cm^2 and the cycles as long as 120 h, which is attributed to the improvement in electrical contact between Li and electrolyte as well as the maintenance of conductive interface during cycles.
文摘In this work, diamond-like carbon （DLC） films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition （MW-ECRPECVD） techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy （AFM）. With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio ID/IG increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp^3-bond carbon density reducing, resulted in the peak values of hardness （H） and elastic modulus （E）. Silicon addition promoted the formation of sp^3 bonding and reduced the hardness. The incorporated Si atoms substituted sp^2- bond carbon atoms in ring structures, which promoted the formation of sp^3-bond. The structural transition from C-C to C-Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.
基金The National Basic Research Program of China(973Project)(No.2012CB719800)the National Natural Science Foundation of China(No.41502276)
文摘A field monitoring program was carried out to record the slope failure process of a landfill with multiple intermediate covering layers.The monitored items include the leachate level,the surface horizontal displacement and the deep lateral displacement.Based on the monitoring data,analysis was carried out to verify the stability control effects of leachate drainage on the top layer,leachate drainage in different layers,and near-slope leachate drainage.The results show that the maximum slip area is 34 760 m 2 and the average surface horizontal displacement of the 10th platform is 1.77 m.Dumping near the slope is the main reason for the instability.The closer to the dumping area,the greater the degree of slip and the more significantly the leachate level rises.Affected by the intermediate covering layers,the failure mode is the local sliding inside the landfill,and the effect of near-slope leachate drainage on the stability control is obvious.
基金the support of the National Natural Science Foundation of China(Grant Nos.51606158,11604311 and 12074151)the Guangxi Science and Technology Base and Talent Special Project(Grant No.AD21075009)+2 种基金the Sichuan Science and Technology Program(Grant No.2021JDRC0022)the Open Fund of the Key Laboratory for Metallurgical Equipment and Control Technology of Ministry of Education in Wuhan University of Science and Technology,People's Republic of China(Grant Nos.MECOF2022B01 and MECOF2023B04)the Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology(Grant No.DH202321)。
文摘In the multilayer film-substrate system,thermal stress concentration and stress mutations cause film buckling,delamination and cracking,leading to device failure.In this paper,we investigated a multilayer film system composed of a substrate and three film layers.The thermal stress distribution inside the structure was calculated by the finite element method,revealing significant thermal stress differences between the layers.This is mainly due to the mismatch of the coefficient of thermal expansion between materials.Different materials respond differently to changes in external temperature,leading to compression between layers.There are obvious thermal stress concentration points at the corners of the base layer and the transition layer,which is due to the sudden change of the shape at the geometric section of the structure,resulting in a sudden increase in local stress.To address this issue,we chamfered the substrate and added an intermediate layer between the substrate and the transition layer to assess whether these modifications could reduce or eliminate the thermal stress concentration points and extend the service life of the multilayer structure.The results indicate that chamfering and adding the intermediate layer effectively reduce stress discontinuities and mitigate thermal stress concentration points,thereby improving interlayer bonding strength.
文摘This work is devoted to the development of a low cost dimensionally stable anode with high oxygen evolution catalytic activity for practical applications.For this purpose,a Ti/SnO_(x)/MnO_(2) anode was fabricated through an innovative strategy involving Sn electrodeposition,oxidation,and MnO_(2)-layer preparation.The structure of the anode was characterized,and the oxygen evolution performance was evaluated in a H_(2)SO_(4) solution.The results show that compared with the Ti/SnO_(2)/MnO_(2) anode prepared by the conventional brushing-annealing process,the Ti/SnO_(x)/MnO_(2) anode fabricated through the innovative procedure exhibits a lower oxygen evolution potential and a nearly 40%longer accelerated lifespan.The superior oxygen evolution performance of the Ti/SnO_(x)/MnO_(2) anode is attributed to the distinctive SnO_(x) intermediate layer fabricated through Sn electrodeposition followed by oxidation,which indicates the great potential of the anode as a dimensionally stable anode for metal electrowinning and hydrogen production by electrolysis,etc.
基金Project(51574287) supported by the National Natural Science Foundation of ChinaProject supported by the Collaborative Innovation Center of Manganese-Zinc-Vanadium Industrial Technology
文摘SnO2intermediate layers were coated on the titanium(Ti)substrate by thermal decomposition.Scanning electronmicroscope(SEM)and X-ray diffraction(XRD)results show that uniform SnO2intermediate layers with rutile crystal structure weresuccessfully achieved.According to the results of linear sweep voltammetry(LSV),oxygen evolution potential(OEP)of theTi/SnO2/MnO2electrodes decreases with increasing SnO2content,indicating that the electro-catalytic oxidation activity of theelectrode increases.Accelerated service life tests results demonstrate that SnO2intermediate layer can improve the service life of theTi/SnO2/MnO2electrode.As the content of SnO2intermediate layer increases,the cell voltage and the energy consumption decreaseapparently.
基金Project supported by the National Natural Science Foundation of China (20901056)the Natural Science Foundation of Tianjin (11JCYBJC04000)+2 种基金the Program of Introducing Talents to the University Disciplines (B06006)the Program for Changjiang Scholars and Innovative Research Teams in Universities (IRT 0641)Seed Foundation of Tianjin University
文摘Al2O3 and La2O3 layers were coated respectively on a FeCrAl alloy foil by a dip-coating technique and used as the second support for the active LaMnAl11O19 hexaaluminate （HA） phase in a metallic monolithic catalyst. A sample without an intermediate layer was employed for comparison. The properties and performances of the catalyst were examined with X-ray diffraction （XRD）, scanning electron microscopy （SEM）, ultrasonic vibration and thermal shock techniques. Methane catalytic combustion was performed to evaluate the activity of the catalyst. The results showed that the activity and adhesion of the HA to the alloy foil could be improved with the introduction of the intermediate layer. Al2O3 provided a strong adhesion, while La2O3 weakened the interaction between the active component and alloy foil. For the activity, the catalysts made with the two different intermediate materials also showed difference.
基金The work was financially supported by the National High Technology Research and Development Program of China(No.2002AA305304),the CNRS/ASC2005:Project18152,Natural Science Foundation Project(05ZR14139)and International Cooperation Project(055207043) of ShanghaiGovernment,and Project ofthe National Natural Science Foundation ofChina(No.O62GJA1001).
文摘Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT) AlN intermediate layer was investigated. High resolution X-ray resolution diffraction (HRXRD) shows that the crystalline quality of thick GaN layer was improved compared with the template. As confirmed by atomic force microscopy (AFM) observations, the surface morphology of AlN intermediate layer helps to improve the nucleation of GaN epilayer. Photoluminescence (PL) spectra measurement shows its high optical quality and low compressive stress, and micro Raman measurement confirms the latter result. Thus, the deposition of the LT-AlN interlayer has promoted the growth of an HVPE-GaN layer with an excellent crystalline quality.
基金financially supported by the National Natural Science Foundation of China (Nos. 90301002 and 90201025)
文摘GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM）, and photo- luminescence （PL） spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthe- sizing GaN nanostructures is achieved.
基金Project supported by the National Basic Research Program of China(Grant No.2012CB933704)the Doctoral Foundation of the Ministry of Education of China(Grant No.20100171110025)the State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,China(GrantNo.2010-RC-3-1)
文摘We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for inverted tan- dem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell （3.15%）. The open-circuit voltage of the tandem cell （1.18 V） approaches double that of the single cell （0.61 V）.
基金Project supported by the National Natural Science Foundation of China (Grant No J54508250120)Xi’an Applied Materials Innovation Fund (Grant No XA-AM-200704)
文摘By formation of an intermediate semiconductor layer （ISL） with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method （TLM） test patterns is formed on N-wells created by P＋ ion implantation into Si-faced p-type 4H- SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance pc as low as 4.23×10-5Ω·cm2 is achieved after annealing in N2 at 800 ℃ for 3 min, which is much lower than that （〉 900℃） in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge＋ ion implantations.
基金National Natural Science Foundation of China(Grant No.51971215).
文摘In this study,the oxidation behavior of Ti42Al5Mn,Ti42Al5Mn0.5 W,Ti42Al5Mn0.5W0.1B,and Ti42Al5Mn0.8 W was investigated at 800℃.Due to the inability to form a dense protective Al2O_(3) layer,Ti42Al5Mn suffered severe spallation during oxidation at 800℃and the mass gain was significant.The intermediate layer between the scale and the substrate was first composed of Laves/Z phase but changed toα2/Z phase with prolonged oxidation.The intermediate layer with high Ti/Al ratio favors the forma-tion of a thick Al2O_(3)+TiO_(2) mixed layer in the oxide scale which is prone to initiate cracks and cause the spalling of oxides.The doping of W in TiO_(2) effectively inhibited its generation and promoted the for-mation of a dense Al2O_(3) layer,resulting in a significant improvement in the oxidation resistance of the alloy.Compared to Ti42Al5Mn alloy,Ti42Al5Mn0.8 W showed no spallation after 300 h cyclic oxidation and the kinetic curve changed from liner law to parabolic law.The intermediate layer of Ti42Al5Mn0.8 W alloy was composed of a single Laves phase and remained unchanged even after 1000 h oxidation at 800℃,offering a favorable basis for the generation of a stable protective oxide layer in the alloy.The addi-tion of 0.1 at.%B to Ti42Al5Mn0.5 W alloy refined its microstructure and further improved its spallation resistance to a level close to that of Ti42Al5Mn0.8 W alloy.
基金supported by the National Natural Science Foundation of China(Grant Nos.62104156,62074102)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023A1515011256,2022A1515010979)China+1 种基金Science and Technology plan project of Shenzhen(Grant Nos.20220808165025003,20200812000347001)Chinasupported by the open foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials,State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures,Guangxi University(Grant No.2022GXYSOF13)。
文摘Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.
基金supported by the National Key Research and Development Program of China(Nos. 2018YFB0703904 and 2017YFE0302600)。
文摘Energy for space vehicles in low Earth orbit(LEO) is mainly generated by solar arrays, and the service time of the vehicles is controlled by the lifetime of these arrays, which depends mainly on the lifetime of the interconnects. To increase the service life of LEO satellites, molybdenum/platinum/silver(Mo/Pt/Ag) laminated metal matrix composite(LMMC) interconnectors are widely used in place of Mo/Ag LMMC and Ag interconnectors in solar arrays. A 2D thermal-electrical-mechanical coupled axisymmetric model was established to simulate the behavior of the parallel gap resistance welding(PGRW) process for solar cells and Mo/Pt/Ag composite interconnectors using the commercial software ANSYS. The direct multicoupled PLANE223 element and the contact pair elements TARGE169 and CONTA172 were employed. A transitional meshing method was applied to solve the meshing problem due to the ultrathin(1 μm) intermediate Pt layer. A comparison of the analysis results with the experimental results revealed that the best parameters were 60 W, 60 ms, and 0.0138 MPa. The voltage and current predicted by the finite element method agreed well with the experimental results. This study contributes to a further understanding of the mechanism of PGRW and provides guidance for finite element simulation of the process of welding with an ultrathin interlayer.
文摘Diamond-like carbon （DLC） films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapor deposition （MW-ECR PECVD） techniques. The effect of sil- icon dopant on the structure, morphology, nanomechanical properties and electrochemical be- havior of DLC films were investigated by Raman spectroscopy, nano-indentation, atomic force microscopy （AFM） and potentiodynamic method and electrochemical impedance spectroscopy （EIS）. It showed that the incorporated silicon atoms substituted sp2-bonded carbon atoms in the ring structures, promoting the formation of sp3-bonds. The structural transition from C-C to C-Si bonds resulted in the relaxation of the residual stress, leading to the decrease in films hardness. The DLC films with Si/SiC intermediate layers led to significant improvement in the corrosion resistance of the stainless steel substrate due to effective isolation and good chemical inertness of the DLC films.
基金supported by the National Key R&D Program of China(no.2018YFE0203400)the National Natural Science Foundation of China(no.62074102)+1 种基金the Guangdong Basic and Applied Basic Research Foundation(no.2022A1515010979)the Science and Technology plan project of Shenzhen(nos.JCYJ20190808120001755 and 20220808165025003)。
文摘Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.
基金Supported by the National Natural Science Foundation of China(Nos.42207173,41831280)the Shandong Provincial Natural Science Foundation(No.ZR2022QD002)+5 种基金the Shandong Provincial and Qingdao Postdoctoral Foundation(No.SDCX-ZG-202203089)the Hainan Research Institute of China Engineering Science and Technology Development Strategy(No.21-HN-ZD-02)the Hainan Key Laboratory of Marine Geological Resources and Environment(No.HNHYDZZYHJKF008)the Key Research and Development Program of Hainan Province(No.ZDYF2020209)funded by the Shandong Province“Taishan Scholar”Construction Projectfunded by the Young Elite Scientist Sponsorship Program by CAST。
文摘Knowledge of nepheloid layers is important to improve the understanding of physical,geological,and sedimentary processes from continental shelf to abyssal environments.We had not tried to study the nepheloid layers in a hydrate-associated tank until unexpected results occurred.Tank experimental results show that gas eruptions triggered intermediate nepheloid layers.Thus,we proposed a new mechanism of intermediate nepheloid layer generation by eruptions.The intermediate nepheloid layers were generated in uniform-density fluid,which indicated that stratified fluid is not a necessary condition for intermediate nepheloid layers.Sufficient space for advection and an oblique slope for detachment are the key ingredients for intermediate nepheloid layer generation by eruptions.Our experiments also offer a new experimental evidence for bottom nepheloid layer generation by earthquakes.Given the scale effects of laboratory experiment,it is important to determine whether submarine volcanic eruption or hydrate-associated venting causes intermediate nepheloid layer in the nature.
文摘Two methods used to grow adherent coatings, roughening of the surface for mechanical interlocking and the use of chemically compatible interlayers having intermediate thermal expansion coefficients are analyzed numerically with the aid of phase diagram. Calculations indicate that more roughness and smaller periodicity of the substrate surface will increase the interfacial area and thus enhance the adherence strength of the coating. The phase diagram shows that an intermediate layer with a proper composition gradient from the substrate to the film will relax the thermal stress at the interface effectively.
基金Funded partially by the National Basic Research Program of China(No.2011CBA00700)
文摘In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate reflector layer.
基金supported by the National Natural Science Foundation of China(62074102)the Guangdong Basic and Applied Basic Research Foundation(2022A1515010979)+1 种基金the Key Project of Department of Education of Guangdong Province(2018KZDXM059)the Science and Technology plan project of Shenzhen(20220808165025003)。
文摘Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back contact influence the PV performances of Sb_(2)Se_(3)solar cells.Hence,optimization of back contact characteristics and absorber orientation are crucial steps in raising the power conversion efficiency(PCE)of Sb_(2)Se_(3)solar cells.In this work,MoO2was introduced as an intermediate layer(IL)in Sb_(2)Se_(3)solar cells,and comparative investigations were conducted.The growth of(211)-oriented Sb_(2)Se_(3)with large grains was facilitated by introducing the MoO2IL with suitable thickness.The MoO2IL substantially lowered the back contact barrier and prevented the formation of voids at the back contact,which reduced the thickness of the MoSe2interface layer,inhibited carrier recombination,and minimized bulk and interfacial defects in devices.Subsequently,significant optimization enhanced the open-circuit voltage(VOC)of solar cells from 0.481 V to 0.487 V,short-circuit current density(JSC)from 23.81 m A/cm^(2)to 29.29 m A/cm^(2),and fill factor from 50.28%to 57.10%,which boosted the PCE from 5.75%to 8.14%.
