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Nanomechanical and Electrochemical Properties of Diamond-Like Carbon (DLC) Films Deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique

Nanomechanical and Electrochemical Properties of Diamond-Like Carbon (DLC) Films Deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique
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摘要 Diamond-like carbon (DLC) films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapor deposition (MW-ECR PECVD) techniques. The effect of sil- icon dopant on the structure, morphology, nanomechanical properties and electrochemical be- havior of DLC films were investigated by Raman spectroscopy, nano-indentation, atomic force microscopy (AFM) and potentiodynamic method and electrochemical impedance spectroscopy (EIS). It showed that the incorporated silicon atoms substituted sp2-bonded carbon atoms in the ring structures, promoting the formation of sp3-bonds. The structural transition from C-C to C-Si bonds resulted in the relaxation of the residual stress, leading to the decrease in films hardness. The DLC films with Si/SiC intermediate layers led to significant improvement in the corrosion resistance of the stainless steel substrate due to effective isolation and good chemical inertness of the DLC films. Diamond-like carbon (DLC) films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition (PEUMS-PVD) and microwave electron cyclotron resonance plasma enhanced chemical vapor deposition (MW-ECR PECVD) techniques. The effect of sil- icon dopant on the structure, morphology, nanomechanical properties and electrochemical be- havior of DLC films were investigated by Raman spectroscopy, nano-indentation, atomic force microscopy (AFM) and potentiodynamic method and electrochemical impedance spectroscopy (EIS). It showed that the incorporated silicon atoms substituted sp2-bonded carbon atoms in the ring structures, promoting the formation of sp3-bonds. The structural transition from C-C to C-Si bonds resulted in the relaxation of the residual stress, leading to the decrease in films hardness. The DLC films with Si/SiC intermediate layers led to significant improvement in the corrosion resistance of the stainless steel substrate due to effective isolation and good chemical inertness of the DLC films.
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第4期461-465,共5页 等离子体科学和技术(英文版)
关键词 PECVD diamond-like carbon (DLC) Si/SiC intermediate layers stainless steel substrates PECVD, diamond-like carbon (DLC), Si/SiC intermediate layers, stainless steel substrates
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参考文献19

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