The typical Haber technical process for industrial NH_(3)production involves plenty of energy-consumption and large quantities of greenhouse gas emission.In contrast,electrochemical N_(2)reduction proffers environment...The typical Haber technical process for industrial NH_(3)production involves plenty of energy-consumption and large quantities of greenhouse gas emission.In contrast,electrochemical N_(2)reduction proffers environment-friendly and energy-efficient avenues to synthesize NH_(3)at mild conditions but demands efficient electrocatalysts for the N_(2)reduction reaction(NRR).Herein we report for the first time that commercial indium-tin oxide glass(ITO/G)can be used as a catalyst electrode toward artificial N_(2)fixation,as it demonstrates excellent selectivity at mild conditions.Such ITO/G delivers excellent NRR performance with a NH_(3)yield of 1.06×10^(-10) mol s^(-1) cm^(-2) and a faradaic efficiency of 6.17%at-0.40 V versus the reversible hydrogen electrode(RHE)in 0.5 M LiClO4.Furthermore,the ITO/G also possesses good electrochemical stability and durability.Finally,the possible reaction mechanism for the NRR on the ITO catalysts was explored using first-principles calculations.展开更多
Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperat...Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.展开更多
The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.展开更多
The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage c...The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.展开更多
Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties...Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.展开更多
Two kinds of indium-tin oxide (ITO) precursors, cubic indium hydroxide(In(OH)_3) and orthorhombic indium oxide hydroxide (InOOH), were prepared by a co-precipitationmethod. With the help of X-ray diffraction (XRD), th...Two kinds of indium-tin oxide (ITO) precursors, cubic indium hydroxide(In(OH)_3) and orthorhombic indium oxide hydroxide (InOOH), were prepared by a co-precipitationmethod. With the help of X-ray diffraction (XRD), thermo-gravimetric analysis (TGA) and differentialthermal analysis (DTA), phase evolutions from cubic In(OH)_3 and orthorhombic InOOH to cubic ITOsolid solution and rhombohedral ITO solid solution by heat-treatment had been comprehensivelyinvestigated. The transformation from cubic In(OH)_3 to cubic ITO solid solution started as low as150 deg C and ended at about 300 degC, and it exhibited an endothermic behavior. The transformationfrom orthorhombic InOOH to rhombohedral ITO solid solution started at 220 deg C and ended at about430 deg C. Moreover, this transformation was composed of two processes: the one was the dehydrationof InOOH exhibiting an endothermic behavior and the other was the transformation from dehydrationproducts to rhombohedral ITO solid solution exhibiting a strong exothermic behavior. RhombohedralITO solid solution was metastable in air and it would transform to cubic ITO solid solution byheat-treatment. The transformation from rhombohedral ITO solid solution to cubic ITO solid solutionstarted at 578 deg C and ended below 800 deg C, and it exhibited a weak exothermic behavior.展开更多
The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes w...The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes was described in this work. To change built-in potential preferably in order to increase the open-circuit voltage, the work function of ITO should be increased and work function of Al should be decreased. The correlation between the change in work functions of electrodes and performance of the organic photovoltaic cells before and after surface modifications was examined in detail. The enhancement of open-circuit voltage depends on a function of work function change of both ITO and Al electrode. We could show that the built-in potential in the cells played an important role in open-circuit voltage.展开更多
Three types of textured indium-tin-oxide （ITO） surface, including nano-texturing and hybrid micro/nano-texturing with micro-holes （concave-hybrid-pattem） or micro-pillars （convex-hybrid-pattern）, were applied to...Three types of textured indium-tin-oxide （ITO） surface, including nano-texturing and hybrid micro/nano-texturing with micro-holes （concave-hybrid-pattem） or micro-pillars （convex-hybrid-pattern）, were applied to GaN-based light-emitting diodes （LEDs）. The nano-texturing was realized by maskless wet-etching, and the micro-texturing was achieved by standard photolithography and wet-etching. Compared to LED chips with flat ITO surface, those with nano-pattern, concave-hybrid-pattern, and convex-hybrid-pattern exhibit enhancement of 11.3%, 15.8%, and 17.9%, respectively, for the light-output powers at 20 mA. The electrical performance has no degradation. Moreover, the convex-hybrid-pattern show higher light-output efficiency under small injection current, while the concave-hybrid-pattern exhibit better light-output efficiency at large injection current. The light- extraction efficiency is simulated by use of two-dimensional finite difference time domain method, and the numer- ical results are consistent with the experiments.展开更多
文摘The typical Haber technical process for industrial NH_(3)production involves plenty of energy-consumption and large quantities of greenhouse gas emission.In contrast,electrochemical N_(2)reduction proffers environment-friendly and energy-efficient avenues to synthesize NH_(3)at mild conditions but demands efficient electrocatalysts for the N_(2)reduction reaction(NRR).Herein we report for the first time that commercial indium-tin oxide glass(ITO/G)can be used as a catalyst electrode toward artificial N_(2)fixation,as it demonstrates excellent selectivity at mild conditions.Such ITO/G delivers excellent NRR performance with a NH_(3)yield of 1.06×10^(-10) mol s^(-1) cm^(-2) and a faradaic efficiency of 6.17%at-0.40 V versus the reversible hydrogen electrode(RHE)in 0.5 M LiClO4.Furthermore,the ITO/G also possesses good electrochemical stability and durability.Finally,the possible reaction mechanism for the NRR on the ITO catalysts was explored using first-principles calculations.
基金supported by the National Eleventh Five-Year Pre-research Project of China (No.51302060203)
文摘Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.
基金Supported by the National Natural Science Foundation of China(No. 20372060), the Key National Natural Science Foundationof China(No. 20131010), the Important National Natural Science Foundation of China(No. 20490210), the"863"Program(Nos.2002AA302105 and 2002AA324080) and Foreign Communion &Cooperation of National Natural Science Foundation of China(No.20340420326).
文摘The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.
基金supported by the National Natural Science Foundation of China under Grants No.60425101Young Excellence Project of University of Electronic Science and Technology of China(UESTC-060206)project.
文摘Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.
文摘Two kinds of indium-tin oxide (ITO) precursors, cubic indium hydroxide(In(OH)_3) and orthorhombic indium oxide hydroxide (InOOH), were prepared by a co-precipitationmethod. With the help of X-ray diffraction (XRD), thermo-gravimetric analysis (TGA) and differentialthermal analysis (DTA), phase evolutions from cubic In(OH)_3 and orthorhombic InOOH to cubic ITOsolid solution and rhombohedral ITO solid solution by heat-treatment had been comprehensivelyinvestigated. The transformation from cubic In(OH)_3 to cubic ITO solid solution started as low as150 deg C and ended at about 300 degC, and it exhibited an endothermic behavior. The transformationfrom orthorhombic InOOH to rhombohedral ITO solid solution started at 220 deg C and ended at about430 deg C. Moreover, this transformation was composed of two processes: the one was the dehydrationof InOOH exhibiting an endothermic behavior and the other was the transformation from dehydrationproducts to rhombohedral ITO solid solution exhibiting a strong exothermic behavior. RhombohedralITO solid solution was metastable in air and it would transform to cubic ITO solid solution byheat-treatment. The transformation from rhombohedral ITO solid solution to cubic ITO solid solutionstarted at 578 deg C and ended below 800 deg C, and it exhibited a weak exothermic behavior.
文摘The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes was described in this work. To change built-in potential preferably in order to increase the open-circuit voltage, the work function of ITO should be increased and work function of Al should be decreased. The correlation between the change in work functions of electrodes and performance of the organic photovoltaic cells before and after surface modifications was examined in detail. The enhancement of open-circuit voltage depends on a function of work function change of both ITO and Al electrode. We could show that the built-in potential in the cells played an important role in open-circuit voltage.
基金Project supported by the National High Technology Research and Development Program of China(No.2014AA032609)the Strategic Emerging Industry Special Funds of Guangdong Province(Nos.2010A081002009,2011A081301004,2012A080302003)the Fundamental Research Funds for the Central Universities(Nos.2013ZM093,2013ZP0017)
文摘Three types of textured indium-tin-oxide （ITO） surface, including nano-texturing and hybrid micro/nano-texturing with micro-holes （concave-hybrid-pattem） or micro-pillars （convex-hybrid-pattern）, were applied to GaN-based light-emitting diodes （LEDs）. The nano-texturing was realized by maskless wet-etching, and the micro-texturing was achieved by standard photolithography and wet-etching. Compared to LED chips with flat ITO surface, those with nano-pattern, concave-hybrid-pattern, and convex-hybrid-pattern exhibit enhancement of 11.3%, 15.8%, and 17.9%, respectively, for the light-output powers at 20 mA. The electrical performance has no degradation. Moreover, the convex-hybrid-pattern show higher light-output efficiency under small injection current, while the concave-hybrid-pattern exhibit better light-output efficiency at large injection current. The light- extraction efficiency is simulated by use of two-dimensional finite difference time domain method, and the numer- ical results are consistent with the experiments.
