摘要
采用直流(DC)磁控溅射法,通过对透明导电薄膜氧化铟锡(ITO)进行结构调控,分析其中的载流子浓度、迁移率等变化,着重探究了薄膜的厚度对红外波段反射率的影响,诠释了薄膜厚度与光电性能之间的构效关系。通过设定特定的溅射功率、衬底温度、气氛控制ITO薄膜的薄膜厚度,得到了100~500 nm厚度的薄膜,实现了高(400)取向、高红外反射率、高可见光透过率的氧化铟锡薄膜的制备。构建的特殊膜层厚度,构成了协同的载流子浓度与迁移率,缓解了一部分漫反射的影响,在膜厚为400 nm时,平均可见光透过率为89.51%,实现了2.5~15μm宽谱段97.37%的平均红外反射率。且所得薄膜品质因数高达815.19×10^(-4)Ω^(-1),显著优于已报道的透明导电薄膜体系,解决了可见光与红外兼容隐身的问题,为频谱兼容光学隐身材料及智能窗的制备提供了新的思路。
The indium tin oxide(ITO)transparent conductive thin films were prepared by DC magnetron sputtering.The relationship between film thickness and optoelectronic properties was investigated.Structural modulation of ITO thin films was performed to analyze carrier concentration and mobility.Special emphasis was placed on examining the influence of film thickness on infrared wavelength reflectivity.By setting specific sputtering power,substrate temperature,and atmosphere to control the thickness of ITO thin films,films with a thickness of 100~500 nm were obtained,and the preparation of ITO thin films with preferred(400)orientation,high infrared reflectivity,and high visible transmittance was achieved.The special film thickness constructed constitutes a synergistic carrier concentration and mobility,which mitigates part of the effect of diffuse reflection,and the films exhibit unique interfacial properties and energy states under the condition of a film thickness of 400 nm,and an average visible transmittance of 89.51%is obtained to achieve an average infrared reflectance of 97.37%in a wide spectral band of 2.5~15μm.And the resulting film quality factor is as high as 815.19×10^(-4)Ω^(-1),which is significantly better than that of the reported transparent conductive thin film system,solving the problem of visible light and infrared-compatible stealth,and providing a new way of thinking for the preparation of spectrum-compatible optical stealth materials and smart windows.
作者
杨季薇
董玲
谷东
徐华蕊
赵昀云
杨涛
李海平
李杰
朱归胜
YANG Jiwei;DONG Ling;GU Dong;XU Huarui;ZHAO Yunyun;YANG Tao;LI Haiping;LI Jie;ZHU Guisheng(Guangxi Key Laboratory of Information Materials,Engineering Research Centre of the Ministry of Education for Electronic Information Materials and Devices,School of Materials Science and Engineering,Guilin University of Electronic Science and Technology,Guilin 541000,China;School of Petroleum and Chemical Engineering,Beibuwan University,Qinzhou 535011,China)
出处
《人工晶体学报》
北大核心
2025年第9期1614-1621,共8页
Journal of Synthetic Crystals
基金
国家自然科学基金(62364007,U21A2065)
广西科技计划(桂科AA21077018,桂科AD23023013,桂科AB23075218)
桂林市科学研究与技术开发计划项目(20220120-1)。
关键词
氧化铟锡薄膜
直流磁控溅射
红外隐身
厚度
光电性能
霍尔参数
indium tin oxide thin film
DC magnetron sputtering
infrared stealth
thickness
optical property
Hall parameter
