ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that...ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.展开更多
用融熔法研制了 In_2O_3和 ITO(In_2O_3掺杂 Sn)单晶,并对其光电性能进行研究.纯 ITO 是一种简并半导体,在常温下,以晶格声子散射为主要的载流子传输机理.对 ITO 单晶,给出了载流子浓度与 Sn 掺杂浓度及载流子迁移率的关系.并对在单晶...用融熔法研制了 In_2O_3和 ITO(In_2O_3掺杂 Sn)单晶,并对其光电性能进行研究.纯 ITO 是一种简并半导体,在常温下,以晶格声子散射为主要的载流子传输机理.对 ITO 单晶,给出了载流子浓度与 Sn 掺杂浓度及载流子迁移率的关系.并对在单晶中由于用助溶剂而引入的 Pb 掺杂对材料电性能的影响作了探讨.从材料的吸收光谱图中的本征吸收限的变化及 Plasma 频率和坡度的变化,证实了我们对电性能测试的结果.EXAFS 结构测试结果给出了这二种材料导电率变化的因素.展开更多
文摘ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.
文摘用融熔法研制了 In_2O_3和 ITO(In_2O_3掺杂 Sn)单晶,并对其光电性能进行研究.纯 ITO 是一种简并半导体,在常温下,以晶格声子散射为主要的载流子传输机理.对 ITO 单晶,给出了载流子浓度与 Sn 掺杂浓度及载流子迁移率的关系.并对在单晶中由于用助溶剂而引入的 Pb 掺杂对材料电性能的影响作了探讨.从材料的吸收光谱图中的本征吸收限的变化及 Plasma 频率和坡度的变化,证实了我们对电性能测试的结果.EXAFS 结构测试结果给出了这二种材料导电率变化的因素.
