摘要
本文研究了掺杂Sb、S_n及Cd的In_2O_3的电性质,并与纯的In_2O_3进行比较,得到一些有意义的结果。IO的电导率及载流子浓度主要由氧缺位所致;ITO和ISO的电导率和载流子浓度,主要由掺杂元素所致;掺Sn的电导率、载流子浓度和迁移率高于掺Sb,其原因在于在同样掺杂浓度的条件下,ITO中的中性杂质浓度低于ISO及掺Sn后使电子离域程度增大。在掺Cd浓度高时,随着Cd浓度增加,电导率和载流子浓度均降低。
The transport properties of So, Sn and Cd doped ceramics have been compared with the undoped In_2O_3 (IO)caramics. For IO, the conductivity and carrier concentration is mainly due to the oxygen vacancies, while for ITO and ISbO, arc mainly due to the doping donors, but they are higher for ITO than those of ISbO because of more Sn^(4+) doping substitution for In^(3+) and higher electron delocalization in In_2O_3 conduction band. Whereas, for Cd doped In_2O_3, the conductivity and carrier concentration become lower as the Cd doping amount is rather important.
出处
《功能材料》
EI
CAS
CSCD
1993年第4期381-384,共4页
Journal of Functional Materials
