InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. ...InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.展开更多
针对变电站内各规格LED数码表数据实时监测出现的低分辨率、模糊、高光、反光小数点误识别问题,提出一种联合YOLOv5神经网络与LIG(local intensity and gradient)小数点识别算法的识别方法。采用YOLOv5识别LED数字部分,通过HSV颜色信息...针对变电站内各规格LED数码表数据实时监测出现的低分辨率、模糊、高光、反光小数点误识别问题,提出一种联合YOLOv5神经网络与LIG(local intensity and gradient)小数点识别算法的识别方法。采用YOLOv5识别LED数字部分,通过HSV颜色信息与灰度信息共同筛选LED部分,并与LIG算法确定小数点位置,完成LED字符数值读取。对采集到的LED数码表图像数据进行实验,结果表明,联合YOLOv5神经网络与LIG小数点识别算法小数点识别准确率平均提高了约8.5%。展开更多
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-...Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter.展开更多
Commercial phosphor-converted white LEDs(pc-WLEDs)face two inherent limitations,namely blue light hazard and low color rendering index,due to the use of blue LEDs as excitation source.To address these challenges,viole...Commercial phosphor-converted white LEDs(pc-WLEDs)face two inherent limitations,namely blue light hazard and low color rendering index,due to the use of blue LEDs as excitation source.To address these challenges,violet LEDs are proposed as an alternative solution.Currently,phosphors that can be efficiently excited by violet light(with wavelengths from 400 to 420 nm)remain under development still.In this study,we utilize large language models to construct a comprehensive database of Eu^(2+)and Ce^(3+)doped phosphors for discovering novel violet-excited phosphors.A total of 822 phosphor data entries,including elemental compositions,crystal structures and excitation/emission wavelengths,have been extracted and validated from 9551 research papers.Compared with Ce^(3+)doped phosphors,the Eu^(2+)are in general more suited for violet-excited phosphors,as well as red-emitting phosphors.In particular,Eu^(2+)doped nitrides and sulfides are worth of exploration for violet-excited phosphors.This database is expected to be useful in the future development of phosphors for pc-WLEDs based on artificial intelligence methods.The datasets in this article are listed in Science Data Bank at http://doi.org/10.57760/sciencedb.34314.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61334001the National Key Research and Development Program of China under Grant Nos 2016YFB0400600,2016YFB0400601 and 2016YFB0400100+1 种基金the National Science Foundation for Young Scientists of China under Grant No 21405076the Fund for Less Developed Regions of the National Natural Science Foundation of China under Grant No 11364034
文摘InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.
文摘针对变电站内各规格LED数码表数据实时监测出现的低分辨率、模糊、高光、反光小数点误识别问题,提出一种联合YOLOv5神经网络与LIG(local intensity and gradient)小数点识别算法的识别方法。采用YOLOv5识别LED数字部分,通过HSV颜色信息与灰度信息共同筛选LED部分,并与LIG算法确定小数点位置,完成LED字符数值读取。对采集到的LED数码表图像数据进行实验,结果表明,联合YOLOv5神经网络与LIG小数点识别算法小数点识别准确率平均提高了约8.5%。
基金National Natural Science Foundation of China (NSFC) (61376069,11775134)Key Research and Development Plan of Shandong Province,China (2018GGX102024,2018GGX102014)
文摘Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter.
基金National Key Research and Development Program of China(2021YFB3500501)。
文摘Commercial phosphor-converted white LEDs(pc-WLEDs)face two inherent limitations,namely blue light hazard and low color rendering index,due to the use of blue LEDs as excitation source.To address these challenges,violet LEDs are proposed as an alternative solution.Currently,phosphors that can be efficiently excited by violet light(with wavelengths from 400 to 420 nm)remain under development still.In this study,we utilize large language models to construct a comprehensive database of Eu^(2+)and Ce^(3+)doped phosphors for discovering novel violet-excited phosphors.A total of 822 phosphor data entries,including elemental compositions,crystal structures and excitation/emission wavelengths,have been extracted and validated from 9551 research papers.Compared with Ce^(3+)doped phosphors,the Eu^(2+)are in general more suited for violet-excited phosphors,as well as red-emitting phosphors.In particular,Eu^(2+)doped nitrides and sulfides are worth of exploration for violet-excited phosphors.This database is expected to be useful in the future development of phosphors for pc-WLEDs based on artificial intelligence methods.The datasets in this article are listed in Science Data Bank at http://doi.org/10.57760/sciencedb.34314.
