量子阱红外探测器(Quantum well infrared photodetector,QWIP)已经经历了20多年的深入研究,各种QWIP器件,包括量子阱红外探测器焦平面阵列(FPA)的研制也已经相当成熟。但是在国内,受制于整体工业水平,QWIP焦平面阵列器件的研制仍然处...量子阱红外探测器(Quantum well infrared photodetector,QWIP)已经经历了20多年的深入研究,各种QWIP器件,包括量子阱红外探测器焦平面阵列(FPA)的研制也已经相当成熟。但是在国内,受制于整体工业水平,QWIP焦平面阵列器件的研制仍然处于起步阶段。研制了基于GaAs/AlxGa1-xAs材料、峰值响应波长为9.9μm的长波320×256 n型QWIP焦平面阵列器件,其像元中心距25μm,光敏元面积为22μm×22μm。GaAs衬底减薄后的QWIP焦平面阵列,与Si基CMOS读出电路(ROIC)通过铟柱倒焊互连,并且在65 K工作温度下进行了室温环境目标成像。该焦平面器件的规模和成像质量相比之前国内报道的结果都有较大提高。焦平面平均峰值探测率达1.5×1010cm.Hz1/2/W。展开更多
We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit process...We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology. A test structure of the photodetector with a mesa size of 300μm × 300μm is also made in order to obtain the device parameters. The measured dark current density at 77K is 1.5 × 10^-3A/cm^2 with a bias voltage of 2V. The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm. The blackbody detectivity is shown to be 3.95 × 10^8 （cm · Hz^1/2）/W. The final FPA is flip-chip bonded on a CMOS read-out integrated circuit. The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.展开更多
利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :...利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :点缺陷释放了部分弹性能 ,使得量子点变小 ,而 As沉淀可能是量子点密度变大的原因 .在光致发光谱 (PL )上 ,退火低温外延层上生长的量子点的发光峰能量较高 。展开更多
文摘We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology. A test structure of the photodetector with a mesa size of 300μm × 300μm is also made in order to obtain the device parameters. The measured dark current density at 77K is 1.5 × 10^-3A/cm^2 with a bias voltage of 2V. The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm. The blackbody detectivity is shown to be 3.95 × 10^8 （cm · Hz^1/2）/W. The final FPA is flip-chip bonded on a CMOS read-out integrated circuit. The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.
文摘介绍了 AlGaAs/GaAs 多量子阱红外探测器(QWIP)暗电流与噪声的关系和降低暗电流的途径;基手湿法化学腐蚀工艺制作了300μm×300μm台面单元器件,并用变温液氦杜瓦测试系统在不同温度下对红外探测器暗电流进行了测试并分析。在温度小于40 K 时,随着温度的改变暗电流没有明显的变化;当温度大于40 K 时,暗电流随着温度的升高迅速变大,正、负偏压下 QWIP 暗电流具有不对称特性。
文摘利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :点缺陷释放了部分弹性能 ,使得量子点变小 ,而 As沉淀可能是量子点密度变大的原因 .在光致发光谱 (PL )上 ,退火低温外延层上生长的量子点的发光峰能量较高 。
