All the indium-rich deposits with indium contents in ores more than 100×10^-6 seems to be of cassiterite-sulfide deposits or Sn-bearing Pb-Zn deposits, e.g., in the Dachang Sn deposit in Guangxi, the Dulong Sn-Zn...All the indium-rich deposits with indium contents in ores more than 100×10^-6 seems to be of cassiterite-sulfide deposits or Sn-bearing Pb-Zn deposits, e.g., in the Dachang Sn deposit in Guangxi, the Dulong Sn-Zn deposit in Yunnan, and the Meng＇entaolegai Ag-Pb-Zn deposit in Inner Mongolia, the indium contents in ores range from 98×10^-6 to 236×10^-6 and show a good positive correlation with contents of zinc and tin, and their correlation coefficients are 0.8781 and 0.7430, respectively. The indium contents from such Sn-poor deposits as the Fozichong Pb-Zn deposit in Guangxi and the Huanren Pb-Zn deposit in Liaoning are generally lower than 10×10^-6, i.e., whether tin is present or not in a deposit implies the enrichment extent of indium in ores. Whether the In enrichment itself in the ore -forming fluids or the ore-forming conditions has actually caused the enrichment/depletion of indium in the deposits？ After studying the fluid inclusions in quartz crystallized at the main stage of mineralization of several In-rich and In-poor deposits in China, this paper analyzed the contents and studied the variation trend of In, Sn, Pb and Zn in the ore-forming fluids. The results show that the contents of lead and zinc in the ore-forming fluids of In-rich and -poor deposits are at the same level, and the lead contents range from 22×10^-6 to 81×10^-6 and zinc from 164×10^-6 to 309×10^-6, while the contents of indium and tin in the ore-forming fluids of In-rich deposits are far higher than those of Inpoor deposits, with a difference of 1-2 orders of magnitude. Indium and tin contents in ore-forming fluid of In-rich deposits are 1.9×10^-6-4.1×10^-6 and 7×10^-6-55×10^-6, and there is a very good positive correlation between the two elements, with a correlation coefficient of 0.9552. Indium and tin contents in ore-forming fluid of In-poor deposits are 0.03×10^-6-0.09×10^-6 and 0.4×10^-6-2.0×10^-6, respectively, and there is no apparent correlation between them. This indicates, on one hand, that In-rich oreforming fluids are the material basis for the formation of In-rich deposits, and, on the other hand, tin probably played a very important role in the transport and enrichment of indium.展开更多
Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this articl...Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.展开更多
The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crys...The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms.The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same.The phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.The In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.展开更多
基金the Key 0rientation Research Project of the Chinese Academy of Sciences （KZCX2-YW- 111）；the National Natural Science Foundation of China （Grant Nos. 40172037 and 40072036） for its financial support.
文摘All the indium-rich deposits with indium contents in ores more than 100×10^-6 seems to be of cassiterite-sulfide deposits or Sn-bearing Pb-Zn deposits, e.g., in the Dachang Sn deposit in Guangxi, the Dulong Sn-Zn deposit in Yunnan, and the Meng＇entaolegai Ag-Pb-Zn deposit in Inner Mongolia, the indium contents in ores range from 98×10^-6 to 236×10^-6 and show a good positive correlation with contents of zinc and tin, and their correlation coefficients are 0.8781 and 0.7430, respectively. The indium contents from such Sn-poor deposits as the Fozichong Pb-Zn deposit in Guangxi and the Huanren Pb-Zn deposit in Liaoning are generally lower than 10×10^-6, i.e., whether tin is present or not in a deposit implies the enrichment extent of indium in ores. Whether the In enrichment itself in the ore -forming fluids or the ore-forming conditions has actually caused the enrichment/depletion of indium in the deposits？ After studying the fluid inclusions in quartz crystallized at the main stage of mineralization of several In-rich and In-poor deposits in China, this paper analyzed the contents and studied the variation trend of In, Sn, Pb and Zn in the ore-forming fluids. The results show that the contents of lead and zinc in the ore-forming fluids of In-rich and -poor deposits are at the same level, and the lead contents range from 22×10^-6 to 81×10^-6 and zinc from 164×10^-6 to 309×10^-6, while the contents of indium and tin in the ore-forming fluids of In-rich deposits are far higher than those of Inpoor deposits, with a difference of 1-2 orders of magnitude. Indium and tin contents in ore-forming fluid of In-rich deposits are 1.9×10^-6-4.1×10^-6 and 7×10^-6-55×10^-6, and there is a very good positive correlation between the two elements, with a correlation coefficient of 0.9552. Indium and tin contents in ore-forming fluid of In-poor deposits are 0.03×10^-6-0.09×10^-6 and 0.4×10^-6-2.0×10^-6, respectively, and there is no apparent correlation between them. This indicates, on one hand, that In-rich oreforming fluids are the material basis for the formation of In-rich deposits, and, on the other hand, tin probably played a very important role in the transport and enrichment of indium.
基金Project supported by the National Key Research and Development Progress of China(Nos.2016YFB0401803,2016YFB0402002)the National Natural Science Foundation of China(Nos.61574160,61334005)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Science(No.XDA09020401)the Science and Technology Support Project of Jiangsu Province(No.BE2013007)
文摘Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.
基金supported by the JST-PRESTO(JPMJPR19I7)World Premier International Research Center(WPI)initiative on Materials Nanoarchitectonics(MANA),Ministry of Education,Culture,Sports,Science&Technology(MEXT)in JapanNational Key Research and Development Program of China(2018YFE0125700).
文摘The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo-electricity energy conversion.However,the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition(MOCVD).We report on the growth of 0.3-1μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms.The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same.The phase separations are inhibited when the growth pressure is higher than atmospheric pressure,leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.The In 0.4 Ga 0.6 N with the thickness of 300 nm is further demonstrated as the active region of solar cells,and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.
