The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,...The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon（μc-Si：H） film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH4：B2H6：H2,a high quality μc-Si：H film with deposition rate above 1.0 nm/s was achieved in this work.展开更多
The inductively coupled plasma chemical vapor deposition(ICP-CVD) deposited silicon nitride(SiN_(x)) thin film was evaluated for its application as the electrical insulating film for a capacitor device.In order to ach...The inductively coupled plasma chemical vapor deposition(ICP-CVD) deposited silicon nitride(SiN_(x)) thin film was evaluated for its application as the electrical insulating film for a capacitor device.In order to achieve highest possible dielectric strength of SiN_(x),the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiN_(x) films by means of tuning N_(2)/SiH_(4) ratio and radio frequency(RF) power.Besides electrical measurements,the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry(D-SIMS).Fourier transform infrared spectroscopy(FTIR) and micro Raman spectroscopy were used to characterize the SiN_(x) films by measuring Si-H and N-H bonds’ intensities.It was found that the more Si-H bonds lead to the higher dielectric strength.展开更多
基金supported by National Natural Science Foundation of China(Nos.11175024,11375031),2011BAD24B01,KM 201110015008,KM 201010015005,BIGC Key Project(No.23190113051)and PHR20110516,PHR201107145
文摘The plasma parameters in ICP-CVD system with internal low inductance antennas（LIA） were diagnosed by Langmuir probe.The ions density（Ni） reached 1011-1012 cm-3,and the electron temperature（Te） was below ca.2 eV,which was slightly decreased with applied power.A p-type hydrogenated microcrystalline silicon（μc-Si：H） film was prepared on glass substrate.After optimization of the processing parameters in flow ratio of SiH4：B2H6：H2,a high quality μc-Si：H film with deposition rate above 1.0 nm/s was achieved in this work.
基金Project supported by the Natural Science Foundation of Jiangsu Higher Education Institutions of China(Grant Nos.19KJD140002 and 19KJB140008)the Key Projects of Ministry of Science and Technology of China(Grant No.SQ2020YFF0407077)+3 种基金Postgraduate Research&Practice Innovation Program of Jiangsu Province,China(Grant Nos.2020XKT786 and KYCX202337)the National Foreign Experts Bureau High-end Foreign Experts Project,China(Grant No.G20190114003)the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018063)the Scientific Research Program for Doctoral Teachers of JSNU(Grant No.9212218113)。
文摘The inductively coupled plasma chemical vapor deposition(ICP-CVD) deposited silicon nitride(SiN_(x)) thin film was evaluated for its application as the electrical insulating film for a capacitor device.In order to achieve highest possible dielectric strength of SiN_(x),the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiN_(x) films by means of tuning N_(2)/SiH_(4) ratio and radio frequency(RF) power.Besides electrical measurements,the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry(D-SIMS).Fourier transform infrared spectroscopy(FTIR) and micro Raman spectroscopy were used to characterize the SiN_(x) films by measuring Si-H and N-H bonds’ intensities.It was found that the more Si-H bonds lead to the higher dielectric strength.
基金Supported by National Key Basic Research and Development Program of China(2012CB619200)the Key Program of the National Natural Science Foundation of China(61205105,,61007067,61376052)
基金supported by the National Natural Science Foundation of China(Grant No.10175030)Natural Science Foundation of Gansu Province(Grant No.4WS035-A72-134).
文摘硅薄电影被诱导地联合的血浆 CVD 在房间温度扔。拉曼光谱和原子力量显微镜学被用来描绘样品的结构和地形学。在最佳血浆条件下面， nano-crystallineSi 电影与在表面上的随机的分布的高密度的 Si 尖端是成年的，这被显示出。高度和 Si 尖端的吝啬的基础直径分别地是 30-40 nm 和约 200 nm。有如此的表面地形学的电影被表明有电子领域排放的好行为。典型阀值地关于 7-10 V/mu m。
