摘要
电感耦合等离子体(ICP)是一种极具发展前景的低温高密度等离子体源,已经在大规模集成电路的深亚微米刻蚀和大面积均匀薄膜的淀积中得到广泛应用。采用自主设计的ICP-CVD设备,在不同的衬底条件和SiH4浓度下制备了一系列的Si薄膜样品。采用多种结构分析手段对样品进行了测试,发现薄膜是非晶相、结晶相和孔隙的混合物,在较低的放电功率下即出现了相当比例的结晶相,对样品电导率和光学带隙的测试也进一步验证了这一结果。
Inductively coupled plasma （ICP） is one of the most promising plasmas in low temperature high density plasma sources, and is extensively used in the deep sub-micrometer etching process of VLSI and large area uniform film deposition. The silicon films under different substrate conditions and silane concentrations by the self-designed ICP-CVD equipment were deposited. The microstructure analysis of samples by several methods indicat that the silicon films are mixtures of crystalline, amorphous phase and voids, but the sizeable crystalline contents in the films appear under such lower discharge power. The further measurements of the samples including conductivity and optical energy band gap also prove the above results.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第9期776-780,共5页
Semiconductor Technology
