The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model...The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner θ0. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect （SCE） immunity.展开更多
研究了重离子引起漏电退化损伤对1 200 V SiC MOSFET栅极可靠性的影响。结果表明,在Ta离子辐照下,V_(DS)在150 V至200 V时,器件漏电流由纳安增加至微安,通过微光显微镜(EMMI)发现损伤主要集中在器件的主结区。经过168 h的20 V栅压考核,...研究了重离子引起漏电退化损伤对1 200 V SiC MOSFET栅极可靠性的影响。结果表明,在Ta离子辐照下,V_(DS)在150 V至200 V时,器件漏电流由纳安增加至微安,通过微光显微镜(EMMI)发现损伤主要集中在器件的主结区。经过168 h的20 V栅压考核,漏电退化器件栅漏电由几微安升高至百微安,但最大跨导和转移特性均无明显变化。研究同时验证了在负栅压辐照条件下,器件栅极更易发生漏电。综上,本研究为SiC MOSFET辐照后栅极可靠性评估、抗辐照性能加固提出新的视角,对探讨天-地等效的重离子单粒子效应模拟实验方法具有一定参考意义。展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 603776024）.
文摘The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner θ0. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect （SCE） immunity.
文摘研究了重离子引起漏电退化损伤对1 200 V SiC MOSFET栅极可靠性的影响。结果表明,在Ta离子辐照下,V_(DS)在150 V至200 V时,器件漏电流由纳安增加至微安,通过微光显微镜(EMMI)发现损伤主要集中在器件的主结区。经过168 h的20 V栅压考核,漏电退化器件栅漏电由几微安升高至百微安,但最大跨导和转移特性均无明显变化。研究同时验证了在负栅压辐照条件下,器件栅极更易发生漏电。综上,本研究为SiC MOSFET辐照后栅极可靠性评估、抗辐照性能加固提出新的视角,对探讨天-地等效的重离子单粒子效应模拟实验方法具有一定参考意义。
