In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB a...In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.展开更多
In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real ...In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 （GeSbS） chalcogenide glass waveguides in the near-infrared wavdength range at λ = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 4- 0.7 W-1 · m-1, which corresponds to a nonlinear refractive index of n2 =（0.93 ± 0.08） ×10-18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA = （0.010± 0.003） cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOM TPA = 6.0 ± 1.4 at λ = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.展开更多
The effect of annealing on microstructure, adhesive and frictional properties of GeSb2Te4 films were experimentally studied. The GeSb2Te4 films were prepared by radio frequency （RF） magnetron sputtering, and anneale...The effect of annealing on microstructure, adhesive and frictional properties of GeSb2Te4 films were experimentally studied. The GeSb2Te4 films were prepared by radio frequency （RF） magnetron sputtering, and annealed at 200℃ and 340℃ under vacuum circumstance, respectively. The adhesion and friction experiments were mainly conducted with a lateral force microscope （LFM） for the GeSb2Te4 thin films before and after annealing. Their morphology and phase structure were analyzed by using atomic force microscopy （AFM） and X-ray Diffraction （XRD） techniques, and the nanoindention was employed to evaluate their hardness values. Moreover, an electric force microscope （EFM） was used to measure the surface potential. It is found that the deposited GeSb2Te4 thin film undergoes an amorphous-to-fcc and fcc-to-hex structure transition; the adhesion has a weaker dependence on the surface roughness, but a certain correlation with the surface potential of GeSb2Te4 thin films. And the friction behavior of GeSb2Te4 thin films follows their adhesion behavior under a lower applied load. However, such a relation is replaced by the mechanical behavior when the load is relatively higher. Moreover, the GeSb2Te4 thin film annealed at 340℃ presents a lubricative property.展开更多
基金National Key Research and Development Program of China(2023YFB2805100)Natural Science Foundation of Guangdong Province(2023A1515110068)National Natural Science Foundation of China(62475296).
文摘In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.
基金H2020 European Research Council(ERC)(647342)U.S. National Science Foundation(NSF)(1506605)French RENATECH Network
文摘In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 （GeSbS） chalcogenide glass waveguides in the near-infrared wavdength range at λ = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 4- 0.7 W-1 · m-1, which corresponds to a nonlinear refractive index of n2 =（0.93 ± 0.08） ×10-18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA = （0.010± 0.003） cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOM TPA = 6.0 ± 1.4 at λ = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.
基金the National Natural Science Foundation of China(No.50475124)the Foundation for the Author of National Excellent Doctoral Dissertation of China(No.200330)New Century Excellent Talents in University(NCET-04-0515)
文摘The effect of annealing on microstructure, adhesive and frictional properties of GeSb2Te4 films were experimentally studied. The GeSb2Te4 films were prepared by radio frequency （RF） magnetron sputtering, and annealed at 200℃ and 340℃ under vacuum circumstance, respectively. The adhesion and friction experiments were mainly conducted with a lateral force microscope （LFM） for the GeSb2Te4 thin films before and after annealing. Their morphology and phase structure were analyzed by using atomic force microscopy （AFM） and X-ray Diffraction （XRD） techniques, and the nanoindention was employed to evaluate their hardness values. Moreover, an electric force microscope （EFM） was used to measure the surface potential. It is found that the deposited GeSb2Te4 thin film undergoes an amorphous-to-fcc and fcc-to-hex structure transition; the adhesion has a weaker dependence on the surface roughness, but a certain correlation with the surface potential of GeSb2Te4 thin films. And the friction behavior of GeSb2Te4 thin films follows their adhesion behavior under a lower applied load. However, such a relation is replaced by the mechanical behavior when the load is relatively higher. Moreover, the GeSb2Te4 thin film annealed at 340℃ presents a lubricative property.
