摘要
在Si(111)基底上用磁控溅射法以不同射频功率制备GeSb2Te4薄膜.利用高度相关函数法对薄膜的原子力显微镜图像进行分形计算,得到表面形貌的分形维.结果表明,分形维的大小与薄膜表面质量成正比,而表面粗糙度不能全面描述薄膜表面形貌;溅射功率对薄膜表面微观结构有直接影响,在一定范围内,增大溅射功率可以提高薄膜表面质量,但超过一定值后,又会降低薄膜表面质量.并指出利用分形维可以优化溅射工艺参数.
GeSb2Te4 thin films were deposited on Si （111 ） wafers by varying RF power of magnetron sputtering. In order to acquire fractal dimension of surface, height - height correlation function was applied to analyze the atomic force microscopy images. The results indicate that the change in fractal dimension is directly proportional to the surface quality, but the roughness can＇t be used to describe the morphologies of film surfaces perfectly. Meanwhile, the surface quality increases with the sputtering power, but a subsequent decrease occurs beyond a certain value. The fraetal dimension may be applied to optimize the parameters of sputtering procedure.
出处
《江苏大学学报（自然科学版）》
EI
CAS
北大核心
2006年第5期430-433,共4页
Journal of Jiangsu University：Natural Science Edition
基金
全国优秀博士学位论文作者专项基金资助项目(200330)
