Single-crystal GaN epilayers were irradiated with heavy inert gas ions(2.3-MeV Ne^(8+),5.3-MeV Kr^(19+))to fluences ranging from 1.0×1.0^(11) to 1.0×1.0^(15)ions∕cm^(2).The strain-related damage accumulatio...Single-crystal GaN epilayers were irradiated with heavy inert gas ions(2.3-MeV Ne^(8+),5.3-MeV Kr^(19+))to fluences ranging from 1.0×1.0^(11) to 1.0×1.0^(15)ions∕cm^(2).The strain-related damage accumulation versus ion fluences was studied using highresolution X-ray diffraction(HRXRD)and ultraviolet–visible(UV–Vis)spectroscopy.The results showed that the damage accumulation was mainly dominated by nuclear energy loss.When the ion fluence was less than∼0.055 displacement per atom(dpa),the lattice expansions and lattice strains markedly increased linearly with increasing ion fluences,accompanied by a slow enhancement in the dislocation densities,distortion parameters,and Urbach energy for both ion irradiations.Above this fluence(∼0.055 dpa),the lattice strains presented a slight increase,whereas a remarkable increase was observed in the dislocation densities,distortion parameters,and Urbach energy with the ion fluences after both ion irradiations.∼0.055 dpa is the threshold ion fluence for defect evolution and lattice damage related to strain.The mechanisms underlying the damage accumulation are discussed in detail.展开更多
Investigated theoretically is a photonic-crystal surface-emitting GaN laser based on surface-etched holes with a porous-GaN cladding layer.The porous GaN has a low refractive index,supporting effective confinement to ...Investigated theoretically is a photonic-crystal surface-emitting GaN laser based on surface-etched holes with a porous-GaN cladding layer.The porous GaN has a low refractive index,supporting effective confinement to the resonant mode,and the porous GaN is derived from as-grown GaN,eliminating the lattice mismatch issues typically associated with GaN platforms.Studied systematically is how the photoniccrystal lattice constant,air hole radius,etching depth,and porous-GaN refractive index affect the performance of the laser.The results show that the laser exhibits optimal overall performance when the lattice constant is 216 nm and the hole radius is 60 nm.The etching depth can be chosen between 30 and 100 nm,and the porous-GaN refractive index is preferably in the range of 1.7–1.9.The research achieves a quality factor as high as 1.9×10^(4),with a photonic-crystal-layer confinement factor of 4.24%and an active-layer confinement factor of 21.8%,along with a low threshold gain of 77 cm^(−1).展开更多
基金supported by the Program for National Natural Science Foundation of China(No.11675231)the Sichuan Science and Technology Program(Nos.2022YFG0263 and 2024NSFSC1097)the Scientific Research Starting Foundation for talents(Nos.21zx7109 and 22zx7175,24ycx1005).
文摘Single-crystal GaN epilayers were irradiated with heavy inert gas ions(2.3-MeV Ne^(8+),5.3-MeV Kr^(19+))to fluences ranging from 1.0×1.0^(11) to 1.0×1.0^(15)ions∕cm^(2).The strain-related damage accumulation versus ion fluences was studied using highresolution X-ray diffraction(HRXRD)and ultraviolet–visible(UV–Vis)spectroscopy.The results showed that the damage accumulation was mainly dominated by nuclear energy loss.When the ion fluence was less than∼0.055 displacement per atom(dpa),the lattice expansions and lattice strains markedly increased linearly with increasing ion fluences,accompanied by a slow enhancement in the dislocation densities,distortion parameters,and Urbach energy for both ion irradiations.Above this fluence(∼0.055 dpa),the lattice strains presented a slight increase,whereas a remarkable increase was observed in the dislocation densities,distortion parameters,and Urbach energy with the ion fluences after both ion irradiations.∼0.055 dpa is the threshold ion fluence for defect evolution and lattice damage related to strain.The mechanisms underlying the damage accumulation are discussed in detail.
基金funded by the Natural Science Foundation of Nanjing University of Posts and Telecommunications(Grant No.NY224125)the Open Fund of the State Key Laboratory of Advanced Optical Communication Systems and Networks(SJTU)(Grant No.2023GZKF018)the Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant Nos.KYCX24_1199 and SJCX24_0286).
文摘Investigated theoretically is a photonic-crystal surface-emitting GaN laser based on surface-etched holes with a porous-GaN cladding layer.The porous GaN has a low refractive index,supporting effective confinement to the resonant mode,and the porous GaN is derived from as-grown GaN,eliminating the lattice mismatch issues typically associated with GaN platforms.Studied systematically is how the photoniccrystal lattice constant,air hole radius,etching depth,and porous-GaN refractive index affect the performance of the laser.The results show that the laser exhibits optimal overall performance when the lattice constant is 216 nm and the hole radius is 60 nm.The etching depth can be chosen between 30 and 100 nm,and the porous-GaN refractive index is preferably in the range of 1.7–1.9.The research achieves a quality factor as high as 1.9×10^(4),with a photonic-crystal-layer confinement factor of 4.24%and an active-layer confinement factor of 21.8%,along with a low threshold gain of 77 cm^(−1).
