An alternative elliptical and circle air-hole-assisted Al_(0.24)Ga_(0.76)As photonic crystal fiber(PCF)was proposed for generating broadband high-coherence mid-infrared supercontinuum,and the dispersion,effect-ive mod...An alternative elliptical and circle air-hole-assisted Al_(0.24)Ga_(0.76)As photonic crystal fiber(PCF)was proposed for generating broadband high-coherence mid-infrared supercontinuum,and the dispersion,effect-ive mode area and nonlinear coefficient were investigated by using finite element method(FEM),the evolu-tion of optical pulses propagating along the fiber was simulated,and the supercontinuum and the coherence were analyzed and evaluated under different pumping conditions.The results show that a supercontinuum spectrum with a spectral width of 4.852μm can be obtained in the proposed fiber with d_(1)/Λof 0.125,d_(2)/Λof 0.583 and the zero-dispersion wavelength of 3.228μm by pumping with a Gaussian pulse with a peak power of 800 W and a full width at half maximum(FWHM)of 20 fs at wavelength of 3.3μm.When the fiber is pumped by the pulse with the peak power of 2000 W,the FWHM of 80 fs at the wavelength of 4.0μm in the in the anomalous dispersion region,the modulation instability is obviously suppressed,and the high-coher-ence supercontinuum spectrum spanning from 1.1μm to 8.99μm is observed.A part of the pulse energy is transferred to the anomalous dispersion region when pumped at the wavelength of 2.8μm in the normal dis-persion region and a broadband high-coherence supercontinuum spectrum extending from 0.8μm to 9.8μm is generated in the 10 mm proposed fiber.This paper introduces elliptical air holes in the Al_(0.24)Ga_(0.76)As photonic crystal fiber,which enhances flexibility for tailoring the performance of supercontinuum,ultimately achieving the broadest supercontinuum spectrum with the shortest fiber length to date.展开更多
β-Ga_(2)O_(3) MOS inverter should play a crucial role in β-Ga_(2)O_(3) electronic circuits. Enhancement-mode(E-mode) MOSFET was fabricated based on β-Ga_(2)O_(3) film grown by atomic layer deposition technology, an...β-Ga_(2)O_(3) MOS inverter should play a crucial role in β-Ga_(2)O_(3) electronic circuits. Enhancement-mode(E-mode) MOSFET was fabricated based on β-Ga_(2)O_(3) film grown by atomic layer deposition technology, and the β-Ga_(2)O_(3) inverter was further monolithically integrated on this basis. The β-Ga_(2)O_(3) n MOSFET exhibits excellent electrical characteristics with an on/off current ratio reaching 10^(5). The logic inverter shows outstanding voltage inversion characteristics under low-frequency from 1 to 400 Hz operation. As the frequency continues to increase to 10 K, the reverse characteristic becomes worse due to parasitic capacitance induced by processes, and the difference between the highest and lowest values of VOUT has an exponential decay relationship with the frequency. This paper provides the practice for the development of β-Ga_(2)O_(3)-based circuits.展开更多
β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其...β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。展开更多
文摘An alternative elliptical and circle air-hole-assisted Al_(0.24)Ga_(0.76)As photonic crystal fiber(PCF)was proposed for generating broadband high-coherence mid-infrared supercontinuum,and the dispersion,effect-ive mode area and nonlinear coefficient were investigated by using finite element method(FEM),the evolu-tion of optical pulses propagating along the fiber was simulated,and the supercontinuum and the coherence were analyzed and evaluated under different pumping conditions.The results show that a supercontinuum spectrum with a spectral width of 4.852μm can be obtained in the proposed fiber with d_(1)/Λof 0.125,d_(2)/Λof 0.583 and the zero-dispersion wavelength of 3.228μm by pumping with a Gaussian pulse with a peak power of 800 W and a full width at half maximum(FWHM)of 20 fs at wavelength of 3.3μm.When the fiber is pumped by the pulse with the peak power of 2000 W,the FWHM of 80 fs at the wavelength of 4.0μm in the in the anomalous dispersion region,the modulation instability is obviously suppressed,and the high-coher-ence supercontinuum spectrum spanning from 1.1μm to 8.99μm is observed.A part of the pulse energy is transferred to the anomalous dispersion region when pumped at the wavelength of 2.8μm in the normal dis-persion region and a broadband high-coherence supercontinuum spectrum extending from 0.8μm to 9.8μm is generated in the 10 mm proposed fiber.This paper introduces elliptical air holes in the Al_(0.24)Ga_(0.76)As photonic crystal fiber,which enhances flexibility for tailoring the performance of supercontinuum,ultimately achieving the broadest supercontinuum spectrum with the shortest fiber length to date.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China (No. 2023-JC-YB-574)National Natural Science Foundation of China (No. 62304178)。
文摘β-Ga_(2)O_(3) MOS inverter should play a crucial role in β-Ga_(2)O_(3) electronic circuits. Enhancement-mode(E-mode) MOSFET was fabricated based on β-Ga_(2)O_(3) film grown by atomic layer deposition technology, and the β-Ga_(2)O_(3) inverter was further monolithically integrated on this basis. The β-Ga_(2)O_(3) n MOSFET exhibits excellent electrical characteristics with an on/off current ratio reaching 10^(5). The logic inverter shows outstanding voltage inversion characteristics under low-frequency from 1 to 400 Hz operation. As the frequency continues to increase to 10 K, the reverse characteristic becomes worse due to parasitic capacitance induced by processes, and the difference between the highest and lowest values of VOUT has an exponential decay relationship with the frequency. This paper provides the practice for the development of β-Ga_(2)O_(3)-based circuits.
文摘β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
