Amplification-free,highly sensitive,and specific nucleic acid detection is crucial for health monitoring and diagnosis.The type III CRISPR-Cas10 system,which provides viral immunity through CRISPRassociated protein ef...Amplification-free,highly sensitive,and specific nucleic acid detection is crucial for health monitoring and diagnosis.The type III CRISPR-Cas10 system,which provides viral immunity through CRISPRassociated protein effectors,enables a new amplification-free nucleic acid diagnostic tool.In this study,we develop a CRISPR-graphene field-effect transistors(GFETs)biosensor by combining the type III CRISPR-Cas10 system with GFETs for direct nucleic acid detection.This biosensor exploits the target RNA-activated continuous ss DNA cleavage activity of the d Csm3 CRISPR-Cas10 effector and the high charge density of a hairpin DNA reporter on the GFET channel to achieve label-free,amplification-free,highly sensitive,and specific RNA detection.The CRISPR-GFET biosensor exhibits excellent performance in detecting medium-length RNAs and miRNAs,with detection limits at the aM level and a broad linear range of 10^(-15)to 10^(-11)M for RNAs and 10^(-15)to 10^(-9)M for miRNAs.It shows high sensitivity in throat swabs and serum samples,distinguishing between healthy individuals(N=5)and breast cancer patients(N=6)without the need for extraction,purification,or amplification.This platform mitigates risks associated with nucleic acid amplification and cross-contamination,making it a versatile and scalable diagnostic tool for molecular diagnostics in human health.展开更多
A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surg...A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surge in research activity,attributable to the diverse functionalities and enhanced accessibility of advanced active materials.In this work,recent advances in gas sensors,specifically those utilizing Field Effect Transistors(FETs),are summarized,including device configurations,response characteristics,sensor materials,and application domains.In pursuing high-performance artificial olfactory systems,the evolution of FET gas sensors necessitates their synchronization with material advancements.These materials should have large surface areas to enhance gas adsorption,efficient conversion of gas input to detectable signals,and strong mechanical qualities.The exploration of gas-sensitive materials has covered diverse categories,such as organic semiconductor polymers,conductive organic compounds and polymers,metal oxides,metal-organic frameworks,and low-dimensional materials.The application of gas sensing technology holds significant promise in domains such as industrial safety,environmental monitoring,and medical diagnostics.This comprehensive review thoroughly examines recent progress,identifies prevailing technical challenges,and outlines prospects for gas detection technology utilizing field effect transistors.The primary aim is to provide a valuable reference for driving the development of the next generation of gas-sensitive monitoring and detection systems characterized by improved sensitivity,selectivity,and intelligence.展开更多
Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunct...Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report.The energy band at the IGMO/IGZO heterojunction was characterized,and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction.Furthermore,the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8×10^(3) A/W and a large detectivity of 5.2×10^(14) Jones under 350-nm ultraviolet illumination,which will also benefit for fabrication of monolithic ultraviolet sensing chip.展开更多
The identification of indoor harmful gases is imperative due to their significant threats to human health and safety.To achieve accurate identification,an effective strategy of constructing a sensor array combined wit...The identification of indoor harmful gases is imperative due to their significant threats to human health and safety.To achieve accurate identification,an effective strategy of constructing a sensor array combined with the pattern recognition algorithm is employed.Carbon-based thin-film transistors are selected as the sensor array unit,with semiconductor carbon nanotubes(CNTs)within the TFT channels modified with different metals(Au,Cu and Ti)for selective responses to NH_(3),H_(2)S and HCHO,respectively.For accurate gas species identification,an identification mode that combines linear discriminant analysis algorithms and logistic regression classifier is developed.The test results demonstrate that by preprocessing the sensor array’s sensing data with the LDA algorithm and subsequently employing the LR classifier for identification,a 100%recognition rate can be achieved for three target gases(NH3,H2S and HCHO).This work provides significant guidance for future applications of chip-level gas sensors in the realms of the Internet of Things and Artificial Intelligence.展开更多
Ambient suspended particulate matter(PM)(primarily with particle diameter 2.5m or less,i.e.,PM2.5)can adversely affect ecosystems and human health.Currently,optical particle sensors based on light scattering dominate ...Ambient suspended particulate matter(PM)(primarily with particle diameter 2.5m or less,i.e.,PM2.5)can adversely affect ecosystems and human health.Currently,optical particle sensors based on light scattering dominate the portable PM sensing market.However,the light scattering method has poor adaptability to different-sized PM and adverse environmental conditions.Here,we design and develop a portable PM sensing microsystem that consists of a micromachined virtual impactor(VI)for particle separation,a thermophoretic deposition chip for particle collection,and an extended-gate field-effect transistor(FET)for particle analysis.This system can realize on-site separation,collection,and analysis of aerosol particles without being influenced by environmental factors.In this study,the design of the VI is thoroughly analyzed by numerical simulation,and mixtures of different-sized silicon dioxide(SiO2)particles are used in an experimental verification of the performance of the VI and FET.Considering the low cost and compact design of the whole system,the proposed PM analysis microsystem has potential for PM detection under a wide range of conditions,such as heavily polluted industrial environments and for point-of-need outdoor and indoor air quality monitoring.展开更多
A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of s...A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.展开更多
Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabricati...Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.展开更多
We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is cou- pled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by...We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is cou- pled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposi- tion and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz 1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.展开更多
Regioregular poly(3-hexylthio)thiopene(P3HTT) has emerged tremendous potential in organic electronic applications due to the strong noncovalent interactions from the sulfur atom linked to thiophene. However, P3HTT gen...Regioregular poly(3-hexylthio)thiopene(P3HTT) has emerged tremendous potential in organic electronic applications due to the strong noncovalent interactions from the sulfur atom linked to thiophene. However, P3HTT generally exhibits low charge mobility mostly due to poor solution processability attributed to dense arrangement of hexylthio side chain in polymer, which led to strong noncovalent interactions among sulfur atoms. To balance the nonvalent interaction and aggregation for P3HTT, herein, we systematically study the effect of hexylthio side chain content in polymer backbone on the structure and properties. A series of regioregular P3HTT-based homopolymers(P3HTT, P3HTT-50,P3HTT-33 and P3HTT-25) were prepared via Kumada catalyst transfer polycondensation method from a set of mono-, bi-, ter-and quarterthiophenes containing different contents of hexylthio side chain. The DFT calculation shows the planarity of polymers backbone could be improved through reducing the density of hexylthio side chain in polymer mainchain. And significant changes in their crystallinity, aggregation and optical properties were observed with the content of hexylthio side chain reducing. The P3HTT-33 displayed the highest field-effect transistor hole mobility of 2.83×10^(-2) cm^(2)·V^(-1)·s^(-1) resulting from a balance between the crystallinity and planarity. This study demonstrates modulating the content of hexylthio side chain in P3HTT is an effective strategy to optimize the opto-electronic properties of polymer obtaining excellent semiconductor device performance.展开更多
Organic semiconductor single crystals(OSSCs) have shown their promising potential in high-performance organic field-effect transistors(OFETs). The interfacial dielectric layers are critical in these OFETs as they not ...Organic semiconductor single crystals(OSSCs) have shown their promising potential in high-performance organic field-effect transistors(OFETs). The interfacial dielectric layers are critical in these OFETs as they not only govern the key semiconductor/dielectric interface quality but also determine the growth of OSSCs by their wetting properties. However, reported interfacial dielectric layers either need rigorous preparation processes, rely on certain surface chemistry reactions, or exhibit poor solvent resistance, which limits their applications in low-cost, large-area, monolithic fabrication of OSSC-based OFETs. In this work, polyethylene(PE) thin films and lamellar single crystals are utilized as the interfacial dielectric layers, providing solvent resistive but wettable surfaces that facilitate the crystallization of 6,13-bis(tri-isopropylsilylethynyl)pentacene(TIPS-PEN) and 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene(TIPS-TAP). As evidenced by the presence of ambipolar behavior in TIPS-PEN single crystals and the high electron mobility(2.3 ± 0.34 cm^(2)V^(-1)s^(-1)) in TIPS-TAP single crystals, a general improvement on electron transport with PE interfacial dielectric layers is revealed, which likely associates with the chemically inertness of the saturated C-H bonds. With the advantages in both processing and device operation, the PE interfacial dielectric layer potentially offers a monolithic way for the enhancement of electron transport in solution-processed OSSC-based OFETs.展开更多
Developing new polymeric semiconductors with excellent device performance is essential for organic electronics. Herein, we synthesized two new thiazoloisoindigo(Tz II)-based polymers, namely, P(Tz II-d Th-d Th) and P(...Developing new polymeric semiconductors with excellent device performance is essential for organic electronics. Herein, we synthesized two new thiazoloisoindigo(Tz II)-based polymers, namely, P(Tz II-d Th-d Th) and P(Tz II-d Th-d Tz), by copolymerizing thiophene-flanked Tz II with bithiophene and bithiazole, respectively. Owing to the more electron-deficient nature of bithiazole than bithiophene, P(Tz II-d Th-d Tz)possesses deeper LUMO/HOMO levels of-3.45/-5.47 e V than P(Tz II-d Th-d Th)(-3.34/-5.32 e V). The organic field-effect transistor(OFET) devices based on P(Tz II-d Th-d Th) exhibited p-type behaviors with an average hole mobility value as high as 1.43 cm^(2)·V^(-1)·s^(-1), while P(Tz II-d Th-d Tz)showed typical ambipolar characteristics with average hole and electron mobilities of 0.38 and 0.56 cm^(2)·V^(-1)·s^(-1). In addition, we compared the performances of both polymers with other Tz II-based polymers reported in our previous work, and showed that the charge carrier polarity can be manipulated by adjusting the number of the thiophene units between the acceptor unit. As the increase of the number of thiophene rings,charge carrier polarity shifts from electron-dominated ambipolar transport to hole-dominated ambipolar transport and then to unipolar hole transport in OFETs, which provides an effective molecular design strategy for further optimization of polymer OFET performance.展开更多
The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas w...The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects.We analyzed the influence of weak magnetic fields,quantum effects,device size,and temperature on the instability of plasma waves under asymmetric boundary conditions numerically.The results show that the magnetic fields,quantum effects,and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency.Additionally,we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment.The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.展开更多
Bladder cancer is the most common malignant tumours with high morbidity, mortality and recurrence.However, currently developed detection methods for bladder cancer-associated urine biomarkers are hindered by their ext...Bladder cancer is the most common malignant tumours with high morbidity, mortality and recurrence.However, currently developed detection methods for bladder cancer-associated urine biomarkers are hindered by their extremely low abundance. Hence, the exploration of a highly sensitive and selective approach for the detection of trace bladder cancer-associated biomarkers in human urine is of vital importance for the diagnosis of bladder cancer. Herein, we developed a highly reliable indium gallium zinc oxide field effect transistor(IGZO FET) biosensor for the detection of bladder cancer-related biomarker micro RNA. The single-stranded DNA-functionalized IGZO FET biosensors exhibit high sensing reproducibility and stability with an ultralow detection limit of 19.8 amol/L. The device could also be used for quantitative detection of trace micro RNA in human urine samples and can effectively distinguish bladder cancer patients from healthy donors. The development of high performance IGZO FET biosensors presents new opportunities for the achievement of early-stage diagnosis of bladder cancer.展开更多
The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only d...The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only detect light within a limited wavelength range(<1100 nm)due to its bandgap of 1.12 eV,which restricts its utility in the infrared detection realm.Herein,a photo-driven fin field-effect transistor is presented,which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection.This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting.The lead sulfide film wraps the silicon channel to form a“three-dimensional”infrared-sensitive gate,enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance.At room temperature,this device realizes a broadband photodetection from visible(635 nm)to short-wave infrared regions(2700 nm),surpassing the working range of the regular indium gallium arsenide and germanium detectors.Furthermore,it exhibits low equivalent noise powers of 3.2×10^(-12) W·Hz^(-1/2) and 2.3×10^(-11) W·Hz^(-1/2) under 1550 nm and 2700 nm illumination,respectively.These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.展开更多
A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-phot...A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.展开更多
Smart agriculture is an inevitable trend in the modernization of agriculture.Achieving efficient and precise monitoring of trace pesticides is an important research direction in smart agriculture,with significant impl...Smart agriculture is an inevitable trend in the modernization of agriculture.Achieving efficient and precise monitoring of trace pesticides is an important research direction in smart agriculture,with significant implications for a safe food supply chain.However,highly sensitive and high-throughput determination of pesticides still faces formidable challenges.Herein,we demonstrate a kind of sensitive and highly selective organophosphorus pesticide device based on organic field-effect transistors(OFETs).The unique signal amplification capability of OFETs and acetylcholinesterase modification on the active channel layer enables the achievement of accurate analysis of chlorpyrifos,parathion-methyl,and omethoate at the ppb level.Moreover,the simultaneous analysis of multiple samples is realized via the preparation of multichannel devices.Additionally,a portable monitoring applet is developed,enabling real-time assessment of the pesticide contamination status of samples based on the current response.This work provides a new avenue for constructing highly sensitive,real-time,high-flux intelligent agriculture sensing technology.展开更多
The rising global incidence of diabetes necessitates the development of innovative glucose monitoring technologies to enhance patient care and disease management.Non-invasive glucose detection through sweat analysis o...The rising global incidence of diabetes necessitates the development of innovative glucose monitoring technologies to enhance patient care and disease management.Non-invasive glucose detection through sweat analysis offers continuous,painless,and user-friendly solutions.However,challenges remain regarding sensitivity and selectivity.To address this issue,we utilize ultrathin SnO_(2)films,which exhibit exceptional electrical sensitivity to surface potential changes,as the active channel in back-gate field effect transistor(FET)-based glucose sensors.These ultrathin SnO_(2)films are prepared by annealing atomically thin tin oxides exfoliated from liquid Sn-Bi.The hydroxyl groups on the defective surface serve as effective anchoring sites for stable glucose oxidase(GOX)immobilization.Under optimal device design,enzymatic glucose oxidation results in positive charge accumulation on the SnO_(2)layers,which modulates charge carrier density and enhances channel current.This effect is amplified by the FET’s subthreshold characteristics under negative back-gate voltage,enabling rapid,highly sensitive and selective glucose sensing.The proposed FET sensor achieves an ultra-high sensitivity of 1211.11μA cm^(2)μM^(−1 )and demonstrates near-specific glucose detection amidst other substances in human sweat,indicating its significant potential for non-invasive,continuous glucose monitoring in practical applications.展开更多
As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen （CEA） threatens human health seriously ali over the globe. Fast electrical and highly sensitive detec...As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen （CEA） threatens human health seriously ali over the globe. Fast electrical and highly sensitive detection of the CEA with A1GaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations （ranging from 50picogram/milliliter （pg/ml） to 50 nanogram/milliliter （ng/ml）） of CEA and achieved a detection limit as low as 50pg/ml at Vas = 0.5 V. The drain-source current shows a c/ear increase of 11.5μA under this bias.展开更多
Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its appl...Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its application to catalytic silicon nanowire(SiNW)channels,known for facile low-temperature fabrication and high yield,has faced challenges primarily due to issues with precise positioning and alignment.In exploring this promising avenue,we employed an in-plane solid–liquidsolid(IPSLS)growth technique to batch-fabricate orderly arrays of ultrathin SiNWs,with diameters of DNW=22.4±2.4 nm and interwire spacing of 90 nm.An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays.By optimizing the source/drain contacts,high-performance GAA-FET devices have been successfully fabricated,based on these catalytic SiNW channels for the first time,yielding a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec−1,closing the performance gap between the catalytic SiNW-FETs and state-ofthe-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography.These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs,well suited for monolithic 3D integrations.展开更多
This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importanc...This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importance of the boundary conditions on the device current-voltage characteristics is discussed. An illustration is given of the transfer DCIV characteristics computed for two boundary conditions,one on electrical potential,giving much higher drift-limited parabolic current through the intrinsic transistor, and the other on the electrochemical potentials, giving much lower injection-over-thebarrier diffusion-limited current with ideal 60mV per decade exponential subthreshold roll-off, simulating electron and hole contacts. The two-MOS-gates on thin pure-body silicon field-effect transistor is used as examples展开更多
基金financially supported by the National Science and Technology Innovation 2030 Grants(2021ZD0201600)the National Key R&D Program of China(2021YFA0717000)+2 种基金the Intramural Joint Program Fund of State Key Laboratory of Microbial Technology(Project No.SKLMTIJP-2024-05)the Natural Science Foundation of Qingdao-Original exploration project(Project No.24-4-4-zrjj-139-jch)the National Natural Science Foundation of China(31771380)。
文摘Amplification-free,highly sensitive,and specific nucleic acid detection is crucial for health monitoring and diagnosis.The type III CRISPR-Cas10 system,which provides viral immunity through CRISPRassociated protein effectors,enables a new amplification-free nucleic acid diagnostic tool.In this study,we develop a CRISPR-graphene field-effect transistors(GFETs)biosensor by combining the type III CRISPR-Cas10 system with GFETs for direct nucleic acid detection.This biosensor exploits the target RNA-activated continuous ss DNA cleavage activity of the d Csm3 CRISPR-Cas10 effector and the high charge density of a hairpin DNA reporter on the GFET channel to achieve label-free,amplification-free,highly sensitive,and specific RNA detection.The CRISPR-GFET biosensor exhibits excellent performance in detecting medium-length RNAs and miRNAs,with detection limits at the aM level and a broad linear range of 10^(-15)to 10^(-11)M for RNAs and 10^(-15)to 10^(-9)M for miRNAs.It shows high sensitivity in throat swabs and serum samples,distinguishing between healthy individuals(N=5)and breast cancer patients(N=6)without the need for extraction,purification,or amplification.This platform mitigates risks associated with nucleic acid amplification and cross-contamination,making it a versatile and scalable diagnostic tool for molecular diagnostics in human health.
基金supported by the National Key R&D Program of China(No.2023YFC3707201)the National Natural Science Foundation of China(No.52320105003)+2 种基金the Informatization Plan of Chinese Academy of Sciences(No.CAS-WX2023PY-0103)the Fundamental Research Funds for the Central Universities(No.E3ET1803)sponsored by the Alliance of International Science Organizations(ANSO)scholarship for young talents.
文摘A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surge in research activity,attributable to the diverse functionalities and enhanced accessibility of advanced active materials.In this work,recent advances in gas sensors,specifically those utilizing Field Effect Transistors(FETs),are summarized,including device configurations,response characteristics,sensor materials,and application domains.In pursuing high-performance artificial olfactory systems,the evolution of FET gas sensors necessitates their synchronization with material advancements.These materials should have large surface areas to enhance gas adsorption,efficient conversion of gas input to detectable signals,and strong mechanical qualities.The exploration of gas-sensitive materials has covered diverse categories,such as organic semiconductor polymers,conductive organic compounds and polymers,metal oxides,metal-organic frameworks,and low-dimensional materials.The application of gas sensing technology holds significant promise in domains such as industrial safety,environmental monitoring,and medical diagnostics.This comprehensive review thoroughly examines recent progress,identifies prevailing technical challenges,and outlines prospects for gas detection technology utilizing field effect transistors.The primary aim is to provide a valuable reference for driving the development of the next generation of gas-sensitive monitoring and detection systems characterized by improved sensitivity,selectivity,and intelligence.
基金supported by the Regional Innovation and Development Joint Fund of the National Nature Science Foundation of China(Grant No.U21A2071).
文摘Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report.The energy band at the IGMO/IGZO heterojunction was characterized,and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction.Furthermore,the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8×10^(3) A/W and a large detectivity of 5.2×10^(14) Jones under 350-nm ultraviolet illumination,which will also benefit for fabrication of monolithic ultraviolet sensing chip.
基金financially supported by the National Natural Science Foundation of China(Nos.62071410 and62101477)Hunan Provincial Natural Science Foundation of China(Nos.2021JJ40542 and 2023JJ30596)the science and technology innovation Program of Hunan Province(No.2023RC3133)。
文摘The identification of indoor harmful gases is imperative due to their significant threats to human health and safety.To achieve accurate identification,an effective strategy of constructing a sensor array combined with the pattern recognition algorithm is employed.Carbon-based thin-film transistors are selected as the sensor array unit,with semiconductor carbon nanotubes(CNTs)within the TFT channels modified with different metals(Au,Cu and Ti)for selective responses to NH_(3),H_(2)S and HCHO,respectively.For accurate gas species identification,an identification mode that combines linear discriminant analysis algorithms and logistic regression classifier is developed.The test results demonstrate that by preprocessing the sensor array’s sensing data with the LDA algorithm and subsequently employing the LR classifier for identification,a 100%recognition rate can be achieved for three target gases(NH3,H2S and HCHO).This work provides significant guidance for future applications of chip-level gas sensors in the realms of the Internet of Things and Artificial Intelligence.
基金supported by the National Natural Science Foundation of China(Nos.91743110,61674114,and 21861132001)the National Key R&D Program of China(Nos.2017YFF0204604 and 2018YFE0118700)+1 种基金Tianjin Applied Basic Research and Advanced Technology(No.17JCJQJC43600),the“111”Project(No.B07014)the Foundation for Talent Scientists of Nanchang Institute for Micro-technology of Tianjin University.
文摘Ambient suspended particulate matter(PM)(primarily with particle diameter 2.5m or less,i.e.,PM2.5)can adversely affect ecosystems and human health.Currently,optical particle sensors based on light scattering dominate the portable PM sensing market.However,the light scattering method has poor adaptability to different-sized PM and adverse environmental conditions.Here,we design and develop a portable PM sensing microsystem that consists of a micromachined virtual impactor(VI)for particle separation,a thermophoretic deposition chip for particle collection,and an extended-gate field-effect transistor(FET)for particle analysis.This system can realize on-site separation,collection,and analysis of aerosol particles without being influenced by environmental factors.In this study,the design of the VI is thoroughly analyzed by numerical simulation,and mixtures of different-sized silicon dioxide(SiO2)particles are used in an experimental verification of the performance of the VI and FET.Considering the low cost and compact design of the whole system,the proposed PM analysis microsystem has potential for PM detection under a wide range of conditions,such as heavily polluted industrial environments and for point-of-need outdoor and indoor air quality monitoring.
文摘A reproducible terahertz （THz） photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz. The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.
基金supported by the National Key R&D Plan of China(Grant No.2023YFB3210400)the National Natural Science Foundation of China(No.62174101)+2 种基金the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603)the Fundamental Research Funds of Shandong University(2020QNQT001)Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,the Natural Science Foundation of Qingdao-Original exploration project(No.24-4-4-zrjj-139-jch).
文摘Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61271157,61401456,and 11403084)Jiangsu Provincial Planned Projects for Postdoctoral Research Funds(Grant No.1301054B)+4 种基金the Fund from Suzhou Industry Technology Bureau(Grant No.ZXG2012024)China Postdoctoral Science Foundation(Grant No.2014M551678)the Graduate Student Innovation Program for Universities of Jiangsu Province(Grant No.CXLX12-0724)the Fundamental Research Funds for the Central Universities(Grant No.JUDCF 12032)the Fund from National University of Defense Technology(Grant No.JC13-02-14)
文摘We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is cou- pled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposi- tion and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz 1/2. Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.
基金financially supported by the Science and Technology Commission of Shanghai Municipality (No.20JC1414900)the National Natural Science Foundation of China (No.52203005)the Science and Technology Commission of Shanghai Municipality (No.21ZR1401400)。
文摘Regioregular poly(3-hexylthio)thiopene(P3HTT) has emerged tremendous potential in organic electronic applications due to the strong noncovalent interactions from the sulfur atom linked to thiophene. However, P3HTT generally exhibits low charge mobility mostly due to poor solution processability attributed to dense arrangement of hexylthio side chain in polymer, which led to strong noncovalent interactions among sulfur atoms. To balance the nonvalent interaction and aggregation for P3HTT, herein, we systematically study the effect of hexylthio side chain content in polymer backbone on the structure and properties. A series of regioregular P3HTT-based homopolymers(P3HTT, P3HTT-50,P3HTT-33 and P3HTT-25) were prepared via Kumada catalyst transfer polycondensation method from a set of mono-, bi-, ter-and quarterthiophenes containing different contents of hexylthio side chain. The DFT calculation shows the planarity of polymers backbone could be improved through reducing the density of hexylthio side chain in polymer mainchain. And significant changes in their crystallinity, aggregation and optical properties were observed with the content of hexylthio side chain reducing. The P3HTT-33 displayed the highest field-effect transistor hole mobility of 2.83×10^(-2) cm^(2)·V^(-1)·s^(-1) resulting from a balance between the crystallinity and planarity. This study demonstrates modulating the content of hexylthio side chain in P3HTT is an effective strategy to optimize the opto-electronic properties of polymer obtaining excellent semiconductor device performance.
基金supported by the National Key Research and Development Program of China (Nos.2019YFE0116700,2019YFA0705900) funded by MOSTNational Natural Science Foundation of China (Nos.51873182, 52103231)+2 种基金Zhejiang Province Science and Technology Plan (No.2021C04012) funded by Zhejiang Provincial Department of Science and TechnologyShanxiZheda Institute of Advanced Materials and Chemical Engineering(No.2021SZ-FR003)the support by the Fundamental Research Funds for the Central Universities (No.226-2023-00113)。
文摘Organic semiconductor single crystals(OSSCs) have shown their promising potential in high-performance organic field-effect transistors(OFETs). The interfacial dielectric layers are critical in these OFETs as they not only govern the key semiconductor/dielectric interface quality but also determine the growth of OSSCs by their wetting properties. However, reported interfacial dielectric layers either need rigorous preparation processes, rely on certain surface chemistry reactions, or exhibit poor solvent resistance, which limits their applications in low-cost, large-area, monolithic fabrication of OSSC-based OFETs. In this work, polyethylene(PE) thin films and lamellar single crystals are utilized as the interfacial dielectric layers, providing solvent resistive but wettable surfaces that facilitate the crystallization of 6,13-bis(tri-isopropylsilylethynyl)pentacene(TIPS-PEN) and 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene(TIPS-TAP). As evidenced by the presence of ambipolar behavior in TIPS-PEN single crystals and the high electron mobility(2.3 ± 0.34 cm^(2)V^(-1)s^(-1)) in TIPS-TAP single crystals, a general improvement on electron transport with PE interfacial dielectric layers is revealed, which likely associates with the chemically inertness of the saturated C-H bonds. With the advantages in both processing and device operation, the PE interfacial dielectric layer potentially offers a monolithic way for the enhancement of electron transport in solution-processed OSSC-based OFETs.
基金supported by the National Natural Science Foundation of China (Nos.22102086 and 22075105)the start-up funding from Jianghan University。
文摘Developing new polymeric semiconductors with excellent device performance is essential for organic electronics. Herein, we synthesized two new thiazoloisoindigo(Tz II)-based polymers, namely, P(Tz II-d Th-d Th) and P(Tz II-d Th-d Tz), by copolymerizing thiophene-flanked Tz II with bithiophene and bithiazole, respectively. Owing to the more electron-deficient nature of bithiazole than bithiophene, P(Tz II-d Th-d Tz)possesses deeper LUMO/HOMO levels of-3.45/-5.47 e V than P(Tz II-d Th-d Th)(-3.34/-5.32 e V). The organic field-effect transistor(OFET) devices based on P(Tz II-d Th-d Th) exhibited p-type behaviors with an average hole mobility value as high as 1.43 cm^(2)·V^(-1)·s^(-1), while P(Tz II-d Th-d Tz)showed typical ambipolar characteristics with average hole and electron mobilities of 0.38 and 0.56 cm^(2)·V^(-1)·s^(-1). In addition, we compared the performances of both polymers with other Tz II-based polymers reported in our previous work, and showed that the charge carrier polarity can be manipulated by adjusting the number of the thiophene units between the acceptor unit. As the increase of the number of thiophene rings,charge carrier polarity shifts from electron-dominated ambipolar transport to hole-dominated ambipolar transport and then to unipolar hole transport in OFETs, which provides an effective molecular design strategy for further optimization of polymer OFET performance.
基金Project supported by the National Natural Science Foundation of China (Grant No.12065015)the Hongliu Firstlevel Discipline Construction Project of Lanzhou University of Technology。
文摘The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects.We analyzed the influence of weak magnetic fields,quantum effects,device size,and temperature on the instability of plasma waves under asymmetric boundary conditions numerically.The results show that the magnetic fields,quantum effects,and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency.Additionally,we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment.The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.
基金supported by the National Key Research and Development Program of China (No.2017YFA0208000)the Natural Science Foundation of China (Nos.21904100,21904033)financial support from Wuhan University。
文摘Bladder cancer is the most common malignant tumours with high morbidity, mortality and recurrence.However, currently developed detection methods for bladder cancer-associated urine biomarkers are hindered by their extremely low abundance. Hence, the exploration of a highly sensitive and selective approach for the detection of trace bladder cancer-associated biomarkers in human urine is of vital importance for the diagnosis of bladder cancer. Herein, we developed a highly reliable indium gallium zinc oxide field effect transistor(IGZO FET) biosensor for the detection of bladder cancer-related biomarker micro RNA. The single-stranded DNA-functionalized IGZO FET biosensors exhibit high sensing reproducibility and stability with an ultralow detection limit of 19.8 amol/L. The device could also be used for quantitative detection of trace micro RNA in human urine samples and can effectively distinguish bladder cancer patients from healthy donors. The development of high performance IGZO FET biosensors presents new opportunities for the achievement of early-stage diagnosis of bladder cancer.
基金supported by the National Key R&D Program of China(2017YFE0131900)the Natural Science Foundation of Chongqing,China(CSTB2023NSCQ-LZX0087)the National Natural Science Foundation of China(62204242,62005182).
文摘The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only detect light within a limited wavelength range(<1100 nm)due to its bandgap of 1.12 eV,which restricts its utility in the infrared detection realm.Herein,a photo-driven fin field-effect transistor is presented,which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection.This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting.The lead sulfide film wraps the silicon channel to form a“three-dimensional”infrared-sensitive gate,enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance.At room temperature,this device realizes a broadband photodetection from visible(635 nm)to short-wave infrared regions(2700 nm),surpassing the working range of the regular indium gallium arsenide and germanium detectors.Furthermore,it exhibits low equivalent noise powers of 3.2×10^(-12) W·Hz^(-1/2) and 2.3×10^(-11) W·Hz^(-1/2) under 1550 nm and 2700 nm illumination,respectively.These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.
基金Project supported by the National Natural Science Foundation of China(Grant No.61274125)the Natural Science Foundation of Beijing,China(Grant No.11DB1262)
文摘A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.
基金supported by the National Key Research and Development Program of China(2023YFD1301500)the Natural Science Foundation of China(32172325 and 22305252)+2 种基金the China Postdoctoral Science Foundation(2023M743552 and 2023M733555)the China National Postdoctoral Program for Innovative Talents(BX20230372)and the Postdoctoral Fellowship Program of CPSF(GZB20230771).
文摘Smart agriculture is an inevitable trend in the modernization of agriculture.Achieving efficient and precise monitoring of trace pesticides is an important research direction in smart agriculture,with significant implications for a safe food supply chain.However,highly sensitive and high-throughput determination of pesticides still faces formidable challenges.Herein,we demonstrate a kind of sensitive and highly selective organophosphorus pesticide device based on organic field-effect transistors(OFETs).The unique signal amplification capability of OFETs and acetylcholinesterase modification on the active channel layer enables the achievement of accurate analysis of chlorpyrifos,parathion-methyl,and omethoate at the ppb level.Moreover,the simultaneous analysis of multiple samples is realized via the preparation of multichannel devices.Additionally,a portable monitoring applet is developed,enabling real-time assessment of the pesticide contamination status of samples based on the current response.This work provides a new avenue for constructing highly sensitive,real-time,high-flux intelligent agriculture sensing technology.
基金supported by the National Natural Science Foundation of China(52072115,U21A20500)the Natural Science Project of Hubei Province in China(2023AFA074,2023AFB758).
文摘The rising global incidence of diabetes necessitates the development of innovative glucose monitoring technologies to enhance patient care and disease management.Non-invasive glucose detection through sweat analysis offers continuous,painless,and user-friendly solutions.However,challenges remain regarding sensitivity and selectivity.To address this issue,we utilize ultrathin SnO_(2)films,which exhibit exceptional electrical sensitivity to surface potential changes,as the active channel in back-gate field effect transistor(FET)-based glucose sensors.These ultrathin SnO_(2)films are prepared by annealing atomically thin tin oxides exfoliated from liquid Sn-Bi.The hydroxyl groups on the defective surface serve as effective anchoring sites for stable glucose oxidase(GOX)immobilization.Under optimal device design,enzymatic glucose oxidation results in positive charge accumulation on the SnO_(2)layers,which modulates charge carrier density and enhances channel current.This effect is amplified by the FET’s subthreshold characteristics under negative back-gate voltage,enabling rapid,highly sensitive and selective glucose sensing.The proposed FET sensor achieves an ultra-high sensitivity of 1211.11μA cm^(2)μM^(−1 )and demonstrates near-specific glucose detection amidst other substances in human sweat,indicating its significant potential for non-invasive,continuous glucose monitoring in practical applications.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and 2016YFB0400301the National Natural Science Foundation of China under Grant No 61334002the National Science and Technology Major Project
文摘As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen （CEA） threatens human health seriously ali over the globe. Fast electrical and highly sensitive detection of the CEA with A1GaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations （ranging from 50picogram/milliliter （pg/ml） to 50 nanogram/milliliter （ng/ml）） of CEA and achieved a detection limit as low as 50pg/ml at Vas = 0.5 V. The drain-source current shows a c/ear increase of 11.5μA under this bias.
基金financial support received from the National Key Research Program of China under granted No.92164201the National Natural Science Foundation of China for Distinguished Young Scholars No.62325403the Fundamental Research Funds for the Central Universities,and the National Natural Science Foundation of China under No.61934004.
文摘Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its application to catalytic silicon nanowire(SiNW)channels,known for facile low-temperature fabrication and high yield,has faced challenges primarily due to issues with precise positioning and alignment.In exploring this promising avenue,we employed an in-plane solid–liquidsolid(IPSLS)growth technique to batch-fabricate orderly arrays of ultrathin SiNWs,with diameters of DNW=22.4±2.4 nm and interwire spacing of 90 nm.An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays.By optimizing the source/drain contacts,high-performance GAA-FET devices have been successfully fabricated,based on these catalytic SiNW channels for the first time,yielding a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec−1,closing the performance gap between the catalytic SiNW-FETs and state-ofthe-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography.These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs,well suited for monolithic 3D integrations.
文摘This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importance of the boundary conditions on the device current-voltage characteristics is discussed. An illustration is given of the transfer DCIV characteristics computed for two boundary conditions,one on electrical potential,giving much higher drift-limited parabolic current through the intrinsic transistor, and the other on the electrochemical potentials, giving much lower injection-over-thebarrier diffusion-limited current with ideal 60mV per decade exponential subthreshold roll-off, simulating electron and hole contacts. The two-MOS-gates on thin pure-body silicon field-effect transistor is used as examples
