This study aimed to evaluate the wake effect on the electric field detector(EFD) onboard the China Seismo-Electromagnetic Satellite(CSES-01). Through a series of experiments and analyses, we confirmed that the disturb...This study aimed to evaluate the wake effect on the electric field detector(EFD) onboard the China Seismo-Electromagnetic Satellite(CSES-01). Through a series of experiments and analyses, we confirmed that the disturbance phenomenon from probe B of the EFD is not caused by the boom layout. To validate and determine whether it is influenced by the wake effect, we conducted two experiments. In the first experiment, the entire satellite platform underwent a 90° counterclockwise yaw maneuver to allow probe B to avoid the plasma wake region. We then verified whether the disturbance was improved. In the second experiment, the satellite platform performed a 180° counterclockwise yaw maneuver, positioning probe B on the ram side of the satellite and completely avoiding all satellite wakes. The plasma wake effect of the satellite did not significantly influence the spherical probes of the EFD because the measurement accuracy stayed relatively stable under the two experiments, despite the observed abnormalities in the operating state of spherical probe B. This consistency in performance is important for electric field detection missions because the spatial electric field vector data obtained from these probes continue to effectively reflect information on spatial electromagnetic disturbances. These two experimental results showed that probe B consistently exhibited data jump phenomena under various maneuver states, whereas probes A, C, and D did not display such phenomena in any maneuver state.展开更多
Online monitoring methods have been widely used in many major devices, however the normal and abnormal states of equipment are estimated mainly based on the monitoring results whether monitored parameters exceed the s...Online monitoring methods have been widely used in many major devices, however the normal and abnormal states of equipment are estimated mainly based on the monitoring results whether monitored parameters exceed the setting thresholds. Using these monitoring methods may cause serious false positive or false negative results. In order to precisely monitor the state of equipment, the problem of abnormality degree detection without fault sample is studied with a new detection method called negative potential field group detectors（NPFG-detectors）. This method achieves the quantitative expression of abnormality degree and provides the better detection results compared with other methods. In the process of Iris data set simulation, the new algorithm obtains the successful results in abnormal detection. The detection rates for 3 types of Iris data set respectively reach 100%, 91.6%, and 95.24% with 50% training samples. The problem of Bearing abnormality degree detection via an abnormality degree curve is successfully solved.展开更多
A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-phot...A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.展开更多
Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different method...Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.展开更多
CBCT scanners have been widely used in angiography,radiotherapy guidance,mammography and oral maxillofacial imaging.To cut detector size,reduce manufacturing costs and radiation dose while keeping a reasonable FOV,the...CBCT scanners have been widely used in angiography,radiotherapy guidance,mammography and oral maxillofacial imaging.To cut detector size,reduce manufacturing costs and radiation dose while keeping a reasonable FOV,the flat panel detector can be placed off-center horizontally.This scanning configuration extends the FOV effectively.However,each projection is transversely truncated,bringing errors and artifacts in reconstruction.In this paper,a simple but practical method is proposed for this scanning geometry based on truncation compensation and the modified FDK algorithm.Numerical simulations with jaw phantom were conducted to evaluate the accuracy and practicability of the proposed method.A novel CBCT system for maxillofacial imaging is used for clinical test,which is equipped with an off-center small size flat panel detector.Results show that reconstruction accuracy is acceptable for clinical use,and the image quality appears sufficient for specific diagnostic requirements.It provides a novel solution for clinical CBCT system,in order to reduce radiation dose and manufacturing cost.展开更多
This paper presents a method to measure the in situ magnetic field in a Hall thruster by optical non-invasive means, based on the optical Faraday rotation effect.This method does not affect the discharge of the thrust...This paper presents a method to measure the in situ magnetic field in a Hall thruster by optical non-invasive means, based on the optical Faraday rotation effect.This method does not affect the discharge of the thruster.Furthermore, its time resolution depends on the speed of the photodetector, and measurement at a MHz scale can be achieved.展开更多
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-...Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.展开更多
In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for ...In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.展开更多
Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. ...Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. The ability of accurate sensing the intensity pattern is required for terahertz imaging systems. Here, we report artefacts in the intensity pattern of a focused terahertz beam around 1 THz by scanning a silicon-lens and antenna coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) detector. The origin of the image distortion is found to be connected with one of the antenna blocks by probing the localized photocurrents as a function of the beam location and the frequency. Although the exact distortion is found with our specific antenna design, we believe similar artefacts could be commonplace in antenna-coupled FET terahertz detectors when the beam spot becomes comparable with the antenna size. To eliminate such artefacts, new antenna designs are welcomed to achieve strong asymmetry in the terahertz field distribution under the gate while maintaining a more symmetric radiation pattern for the whole antenna.展开更多
基金a project funded by the China National Space Administration (CNSA) and China Earthquake Administration (CEA)supported by the National Key R&D Program of Intergovernmental Cooperation in Science and Technology (Grant No. 2023YFE0117300)+3 种基金the International Space Science Institute (ISSI in Bern, Switzerland, and ISSI-BJ in Beijing, China)supporting International Team 23-583 led by Dedalo Marchetti and Essam Ghamrythe Hebei Province Graduate Professional Degree Excellent Teaching Case (Library) Construction Project (Grant No. KCJPZ2023060)the Open Fund for the Key Laboratory of Seismic Disaster Instruments and Monitoring Technology in Hebei Province (Grant No. FZ224104)。
文摘This study aimed to evaluate the wake effect on the electric field detector(EFD) onboard the China Seismo-Electromagnetic Satellite(CSES-01). Through a series of experiments and analyses, we confirmed that the disturbance phenomenon from probe B of the EFD is not caused by the boom layout. To validate and determine whether it is influenced by the wake effect, we conducted two experiments. In the first experiment, the entire satellite platform underwent a 90° counterclockwise yaw maneuver to allow probe B to avoid the plasma wake region. We then verified whether the disturbance was improved. In the second experiment, the satellite platform performed a 180° counterclockwise yaw maneuver, positioning probe B on the ram side of the satellite and completely avoiding all satellite wakes. The plasma wake effect of the satellite did not significantly influence the spherical probes of the EFD because the measurement accuracy stayed relatively stable under the two experiments, despite the observed abnormalities in the operating state of spherical probe B. This consistency in performance is important for electric field detection missions because the spatial electric field vector data obtained from these probes continue to effectively reflect information on spatial electromagnetic disturbances. These two experimental results showed that probe B consistently exhibited data jump phenomena under various maneuver states, whereas probes A, C, and D did not display such phenomena in any maneuver state.
基金Supported by National Natural Science Foundation of China(Grant No.51175316)Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20103108110006)Basic Research Project of Shanghai Science and Technology Commission,China(Grant No.11JC1404100)
文摘Online monitoring methods have been widely used in many major devices, however the normal and abnormal states of equipment are estimated mainly based on the monitoring results whether monitored parameters exceed the setting thresholds. Using these monitoring methods may cause serious false positive or false negative results. In order to precisely monitor the state of equipment, the problem of abnormality degree detection without fault sample is studied with a new detection method called negative potential field group detectors（NPFG-detectors）. This method achieves the quantitative expression of abnormality degree and provides the better detection results compared with other methods. In the process of Iris data set simulation, the new algorithm obtains the successful results in abnormal detection. The detection rates for 3 types of Iris data set respectively reach 100%, 91.6%, and 95.24% with 50% training samples. The problem of Bearing abnormality degree detection via an abnormality degree curve is successfully solved.
基金Project supported by the National Natural Science Foundation of China(Grant No.61274125)the Natural Science Foundation of Beijing,China(Grant No.11DB1262)
文摘A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11675198,11875097,11975257,61774072,61574026,and 61971090)the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and2016YFB0400601)+2 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.DUT19LK45)the China Postdoctoral Science Foundation(Grant No.2016M591434)the Science and Technology Plan of Dalian City,China(Grant No.2018J12GX060).
文摘Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging task.In this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench depth.On the other hand,the electron blocking region is formed in the detector enveloped with a dielectric layer.Furthermore,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main junction.It can be realized that all these methods can considerably enhance the working voltage as well as W.Of them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-3.Consequently,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional design.This work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.
基金Supported by National Key Technology R&D Program of the Ministry of Science and Technology(No.2012BAI07B05)
文摘CBCT scanners have been widely used in angiography,radiotherapy guidance,mammography and oral maxillofacial imaging.To cut detector size,reduce manufacturing costs and radiation dose while keeping a reasonable FOV,the flat panel detector can be placed off-center horizontally.This scanning configuration extends the FOV effectively.However,each projection is transversely truncated,bringing errors and artifacts in reconstruction.In this paper,a simple but practical method is proposed for this scanning geometry based on truncation compensation and the modified FDK algorithm.Numerical simulations with jaw phantom were conducted to evaluate the accuracy and practicability of the proposed method.A novel CBCT system for maxillofacial imaging is used for clinical test,which is equipped with an off-center small size flat panel detector.Results show that reconstruction accuracy is acceptable for clinical use,and the image quality appears sufficient for specific diagnostic requirements.It provides a novel solution for clinical CBCT system,in order to reduce radiation dose and manufacturing cost.
基金the support of National Natural Science Foundation of China (No.51807006)
文摘This paper presents a method to measure the in situ magnetic field in a Hall thruster by optical non-invasive means, based on the optical Faraday rotation effect.This method does not affect the discharge of the thruster.Furthermore, its time resolution depends on the speed of the photodetector, and measurement at a MHz scale can be achieved.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51602340,51702355,and 61674167)the Natural Science Foundation of Beijing Municipality of China(Grant No.4192064)+1 种基金the National Key Research Program of China(Grant Nos.2018YFB1500500 and 2018YFB1500200)the JKW Project of China(Grant No.31512060106)。
文摘Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10^(15) cm^(-3). When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.
基金partially supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-705)China Postdoctoral Science Foundation(Grant No.2014M551678)+4 种基金Jiangsu Planned Projects for Postdoctoral Research Funds(Grant No.1301054B)Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YZ201152)the National Natural Science Foundation of China(Grant No.61271157)Suzhou Science and Technology Project(Grant No.ZXG2012024)the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists(Grant No.2010T2J07)
文摘In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFF0100501)the National Natural Science Foundation of China(Grant Nos.61771466,61775231,and 61611530708)+3 种基金the Six Talent Peaks Project of Jiangsu Province,China(Grant No.XXRJ-079)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2017372)the Russian Foundation for Basic Research(Grant No.17-52-53063)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20160400)
文摘Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. The ability of accurate sensing the intensity pattern is required for terahertz imaging systems. Here, we report artefacts in the intensity pattern of a focused terahertz beam around 1 THz by scanning a silicon-lens and antenna coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) detector. The origin of the image distortion is found to be connected with one of the antenna blocks by probing the localized photocurrents as a function of the beam location and the frequency. Although the exact distortion is found with our specific antenna design, we believe similar artefacts could be commonplace in antenna-coupled FET terahertz detectors when the beam spot becomes comparable with the antenna size. To eliminate such artefacts, new antenna designs are welcomed to achieve strong asymmetry in the terahertz field distribution under the gate while maintaining a more symmetric radiation pattern for the whole antenna.
