Theories of Mott and Weertmann pertaining to quantum mechanical tunneling of dislocations from Peierls barrier in cubic crystals are revisited. Their mathematical calculations about logarithmic creep rate and lattice ...Theories of Mott and Weertmann pertaining to quantum mechanical tunneling of dislocations from Peierls barrier in cubic crystals are revisited. Their mathematical calculations about logarithmic creep rate and lattice vibrations as a manifestation of Debye temperature for quantized thermal energy are found correct but they can not ascertain to choose the mass of phonon or “quanta” of lattice vibrations. The quantum mechanical yielding in metals at relatively low temperatures, where Debye temperatures operate, is resolved and the mathematical formulas are presented. The crystal plasticity is studied with stress relaxation curves instead of logarithmic creep rate. With creep rate formulas of Mott and Weertmann, a new formula based on logarithmic profile of stress relaxation curves is proposed which suggests simultaneous quantization of dislocations with their stress, i.e., and depinning of dislocations, i.e., , where is quantum action, σ is the stress, N is the number of dislocations, A is the area and t is the time. The two different interpretations of “quantum length of Peierls barrier”, one based on curvature of space, i.e., yields quantization of Burgers vector and the other based on the curvature of time, i.e., yields depinning of dislocations from Peierls barrier in cubic crystals, are presented. , i.e., the unitary operator on shear modulus yields the variations in the curvature of time due to which simultaneous quantization, and depinning of dislocations occur from Peierls barrier in cubic crystals.展开更多
We investigate the wavefronts depinning in current biased, infinitely long semiconductor superlattice systems by the method of discrete mapping and show that the wavefront depinning corresponds to the discrete mapping...We investigate the wavefronts depinning in current biased, infinitely long semiconductor superlattice systems by the method of discrete mapping and show that the wavefront depinning corresponds to the discrete mapping failure. For parameter values near the lower critical current in both discrete drift model （DD model） and discrete drift-diffusion model （DDD model）, the mapping failure is determined by the important mapping step from the bottom of branch to branch α. For the upper critical parameters in DDD model, the key mapping step is from branch γ to the top of the corresponding branch α and we may need several active wells to describe the wavefronts.展开更多
Using Langevin simulations, we. investigate the depinning dynamics of two-dimensional charged colloids on a random laser-optical substrate. With an increase in the strength of the substrate, we find a transition from ...Using Langevin simulations, we. investigate the depinning dynamics of two-dimensional charged colloids on a random laser-optical substrate. With an increase in the strength of the substrate, we find a transition from crystal to smectic flows above the depinning. A power-law scaling relationship between average velocity and applied driving force could be obtained for both flows, and we find that the scaling exponents are no bigger than 1 for the crystal and are bigger than 1 for the smectic flows.展开更多
Accurate quantification of the spin–orbit torques(SOTs) is critical for the identification and applications of new spin-orbitronic effects. One of the most popular techniques to quantify the SOTs is the “switching a...Accurate quantification of the spin–orbit torques(SOTs) is critical for the identification and applications of new spin-orbitronic effects. One of the most popular techniques to quantify the SOTs is the “switching angle shift”, where the applied direct current is assumed to shift, via domain wall depinning during anti-domain expansion, the switching angle of a perpendicular magnetization in a linear proportional manner under a large rotating magnetic field. Here, we report that, for the most commonly employed perpendicular magnetization heterostructures in spintronics(e.g., those based on FeCoB, Co, and Co/Ni multilayers), the switching angle shift considerably misestimates the SOT within the domain wall depinning analysis of the slope of linear-in-current scaling and may also have a non-zero residual value at zero direct current. Our experiments and simulations unveil that the switching angle shift is most likely dominated by chiral asymmetric nucleation rather than expansion of anti-domains. The in-plane field from external magnets and current-induced SOTs lowers the perpendicular nucleation field and thus reduces the required switching angle, ultimately leading to an underestimation of SOTs by domain wall depinning analysis. These results have advanced our understanding of magnetization switching in spintronic devices.展开更多
We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. W...We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height（SBH） occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.展开更多
Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteri...Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.展开更多
The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effectiv...The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.展开更多
The serratedflow of alloy LC9 with different regimes of heat treatment has been investigated at constant rate of stretching.The critieal strain ε_c at the starting of serrated flow increases with the extension of agi...The serratedflow of alloy LC9 with different regimes of heat treatment has been investigated at constant rate of stretching.The critieal strain ε_c at the starting of serrated flow increases with the extension of aging.The activation energy of the process is 0.63 e V which is consistent with the diffusion activation energy of vacancies in A1.The ε_c decreases while the strain rate ε increases,i.e.,with negative strain rate relation.This relation is contrary to that of the an- nealed samples.It shows that the serrated 17ow of annealed sample is controlled by deformation vaeancies,and that of aged sample is controlled by quenching vacancies.The den- sity and shape of the serration are changed by aging.The mechanism of the above mentioned results is discussed.展开更多
For the high-dimensional Frenkel-Kontorova(FK)model on lattices,we study the existence of minimal foliations by depinning force.We introduce the tilted gradient flow and define the depinning force as the critical valu...For the high-dimensional Frenkel-Kontorova(FK)model on lattices,we study the existence of minimal foliations by depinning force.We introduce the tilted gradient flow and define the depinning force as the critical value of the external force under which the average velocity of the system is zero.Then,the depinning force can be used as the criterion for the existence of minimal foliations for the FK model on a Z^(d)lattice for d>1.展开更多
In-doped (Se0.7Te0.3) thin films (In: 0, 0.05, and 0.08wt%) with thickness of (150 ± 25 nm) have been deposited on glass substrates by chemical vapor deposition by using selenium, tellurium and indium whose purit...In-doped (Se0.7Te0.3) thin films (In: 0, 0.05, and 0.08wt%) with thickness of (150 ± 25 nm) have been deposited on glass substrates by chemical vapor deposition by using selenium, tellurium and indium whose purity is (99.99%) compound alloy. The electrical and optical properties of the thin films were analyzed. The effects of In-doping concentration on the thermoelectric properties of the thin films were investigated by room-temperature measurement of the See beck coefficient and electrical resistivity. The thermoelectric power factor shows the best result at 0.05wt% in doping. The See beck coefficients are positive with increasing in doping concentration from 0 to 0.08wt%. And the thin films show p-type conduction. For optical properties, the transmission of all samples was approximated to 90%.展开更多
Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was pr...Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD.Thanks to the formation of a depletion layer on the Sn-Ga_(2)O_(3) side at the homogeneous interface,a self-powered supply with an open-circuit voltage of~100 mV is successfully achieved.Moreover,a peculiar phenomenon that the rectification direction of theβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) n-N homojunction device can be controlled by light irradiation is also worthy of attention,which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation.In this case,the photo-to-dark current ratio can reach up to 1.19×105 under the voltage of 5 V.To a certain extent,this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.展开更多
Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)wi...Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)with high work functions are generally used to achieve efficient hole injection.In these devices,Fermi-level pinning,a phenomenon often observed in heterojunctions involving organic semiconductors,can take place in the hole-injection/hole-transporting interfaces.However,an in-depth understanding of the impacts of Fermi-level pinning at the hole-injection/hole-transporting interfaces on the operation and performance of QLEDs is still lacking.Here,we develop a set of NiOx HILs with controlled work functions of 5.2–5.9 eV to investigate QLEDs with Fermi-level pinning at the hole-injection/hole-transporting interfaces.The results show that despite that Fermi-level pinning induces identical apparent hole-injection barriers,the red QLEDs using HILs with higher work functions show improved efficiency roll-off and better operational stability.Remarkably,the devices using the NiOx HILs with a work function of 5.9 eV demonstrate a peak external quantum efficiency of~18.0%and a long T95 operational lifetime of 8,800 h at 1,000 cd·m^(−2),representing the best-performing QLEDs with inorganic HILs.Our work provides a key design principle for future developments of the hole-injection/hole-transporting interfaces of QLEDs.展开更多
A main challenge for the development of two-dimensional devices based on atomically thin transition-metal dichalcogenides(TMDs)is the realization of metal–semiconductor junctions(MSJs)with low contact resistance and ...A main challenge for the development of two-dimensional devices based on atomically thin transition-metal dichalcogenides(TMDs)is the realization of metal–semiconductor junctions(MSJs)with low contact resistance and high charge transport capability.However,traditional metal–TMD junctions usually suffer from strong Fermi-level pinning(FLP)and chemical disorder at the interfaces,resulting in weak device performance and high energy consump-tion.By means of high-throughput first-principles calculations,we report an attractive solution via the formation of van der Waals(vdW)contacts between metallic and semiconducting TMDs.We apply a phase-engineering strategy to create a monolayer TMD database for achieving a wide range of work func-tions and band gaps,hence offering a large degree of freedom to construct TMD vdW MSJs with desired contact types.The Schottky barrier heights and contact types of 728 MSJs have been identified and they exhibit weak FLP(-0.62 to-0.90)as compared with the traditional metal–TMD junctions.We find that the interfacial interactions of the MSJs bring a delicate competition between the FLP strength and carrier tunneling efficiency,which can be uti-lized to screen high-performance MSJs.Based on a set of screening criteria,four potential TMD vdW MSJs(e.g.,NiTe_(2)/ZrSe_(2),NiTe_(2)/PdSe_(2),HfTe_(2)/PdTe_(2),TaSe_(2)/MoTe_(2))with Ohmic contact,weak FLP,and high carrier tunneling probability have been predicted.This work not only provides a fundamental understanding of contact properties of TMD vdW MSJs but also renders their huge potential for electronics and optoelectronics.展开更多
The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical ...The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical properties.The resistivity and electron mobility–lifetime product of high resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT1 and low resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT2 were tested respectively.Their deep-level defects were identified by thermally stimulated current（TSC）spectroscopy and thermoelectric effect spectroscopy（TEES）respectively.Then the trap-related parameters were characterized by the simultaneous multiple peak analysis（SIMPA）method.The deep donor level（EDD/dominating dark current was calculated by the relationship between dark current and temperature.The Fermi-level was characterized by current–voltage measurements of temperature dependence.The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy.The results show the traps concentration and capture cross section of CZT1 are lower than CZT2,so its electron mobility–lifetime product is greater than CZT2.The Fermi-level of CZT1 is closer to the middle gap than CZT2.The degree of Fermi-level pinned by EDDof CZT1 is larger than CZT2.It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges.展开更多
文摘Theories of Mott and Weertmann pertaining to quantum mechanical tunneling of dislocations from Peierls barrier in cubic crystals are revisited. Their mathematical calculations about logarithmic creep rate and lattice vibrations as a manifestation of Debye temperature for quantized thermal energy are found correct but they can not ascertain to choose the mass of phonon or “quanta” of lattice vibrations. The quantum mechanical yielding in metals at relatively low temperatures, where Debye temperatures operate, is resolved and the mathematical formulas are presented. The crystal plasticity is studied with stress relaxation curves instead of logarithmic creep rate. With creep rate formulas of Mott and Weertmann, a new formula based on logarithmic profile of stress relaxation curves is proposed which suggests simultaneous quantization of dislocations with their stress, i.e., and depinning of dislocations, i.e., , where is quantum action, σ is the stress, N is the number of dislocations, A is the area and t is the time. The two different interpretations of “quantum length of Peierls barrier”, one based on curvature of space, i.e., yields quantization of Burgers vector and the other based on the curvature of time, i.e., yields depinning of dislocations from Peierls barrier in cubic crystals, are presented. , i.e., the unitary operator on shear modulus yields the variations in the curvature of time due to which simultaneous quantization, and depinning of dislocations occur from Peierls barrier in cubic crystals.
基金Project supported in part by the State Key Program of National Natural Science of China (Grant No 70431002)the National Natural Science Foundation of China (Grant No 10575010)+1 种基金the National Basic Research Program of China (Grant No 2007CB814805)the Foundation of Doctoral Training of China (Grant No 20060027009)
文摘We investigate the wavefronts depinning in current biased, infinitely long semiconductor superlattice systems by the method of discrete mapping and show that the wavefront depinning corresponds to the discrete mapping failure. For parameter values near the lower critical current in both discrete drift model （DD model） and discrete drift-diffusion model （DDD model）, the mapping failure is determined by the important mapping step from the bottom of branch to branch α. For the upper critical parameters in DDD model, the key mapping step is from branch γ to the top of the corresponding branch α and we may need several active wells to describe the wavefronts.
基金Supported by the Foundation of Henan Educational Committee under Grant Nos.2008A140011 and 2008B140010
文摘Using Langevin simulations, we. investigate the depinning dynamics of two-dimensional charged colloids on a random laser-optical substrate. With an increase in the strength of the substrate, we find a transition from crystal to smectic flows above the depinning. A power-law scaling relationship between average velocity and applied driving force could be obtained for both flows, and we find that the scaling exponents are no bigger than 1 for the crystal and are bigger than 1 for the smectic flows.
基金supported by the National Key Research and Development Program of China (Grant No.2022YFA1204000)partly by the National Natural Science Foundation of China (Grant Nos.12274405,12304155,and 12393831)the Beijing Natural Science Foundation (Grant No.Z230006)。
文摘Accurate quantification of the spin–orbit torques(SOTs) is critical for the identification and applications of new spin-orbitronic effects. One of the most popular techniques to quantify the SOTs is the “switching angle shift”, where the applied direct current is assumed to shift, via domain wall depinning during anti-domain expansion, the switching angle of a perpendicular magnetization in a linear proportional manner under a large rotating magnetic field. Here, we report that, for the most commonly employed perpendicular magnetization heterostructures in spintronics(e.g., those based on FeCoB, Co, and Co/Ni multilayers), the switching angle shift considerably misestimates the SOT within the domain wall depinning analysis of the slope of linear-in-current scaling and may also have a non-zero residual value at zero direct current. Our experiments and simulations unveil that the switching angle shift is most likely dominated by chiral asymmetric nucleation rather than expansion of anti-domains. The in-plane field from external magnets and current-induced SOTs lowers the perpendicular nucleation field and thus reduces the required switching angle, ultimately leading to an underestimation of SOTs by domain wall depinning analysis. These results have advanced our understanding of magnetization switching in spintronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.61504107)the Fundamental Research Funds for the Central Universities,China(Grant Nos.3102014JCQ01059 and 3102015ZY043)
文摘We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height（SBH） occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176092 and 61474094)the National Basic Research Program of China(Grant Nos.2012CB933503 and 2012CB632103)the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project(Grant No.11311140251)
文摘Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376096,61327813,and 11234007)
文摘The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.
文摘The serratedflow of alloy LC9 with different regimes of heat treatment has been investigated at constant rate of stretching.The critieal strain ε_c at the starting of serrated flow increases with the extension of aging.The activation energy of the process is 0.63 e V which is consistent with the diffusion activation energy of vacancies in A1.The ε_c decreases while the strain rate ε increases,i.e.,with negative strain rate relation.This relation is contrary to that of the an- nealed samples.It shows that the serrated 17ow of annealed sample is controlled by deformation vaeancies,and that of aged sample is controlled by quenching vacancies.The den- sity and shape of the serration are changed by aging.The mechanism of the above mentioned results is discussed.
基金supported by the National Natural Science Foundation of China(11701298)。
文摘For the high-dimensional Frenkel-Kontorova(FK)model on lattices,we study the existence of minimal foliations by depinning force.We introduce the tilted gradient flow and define the depinning force as the critical value of the external force under which the average velocity of the system is zero.Then,the depinning force can be used as the criterion for the existence of minimal foliations for the FK model on a Z^(d)lattice for d>1.
文摘In-doped (Se0.7Te0.3) thin films (In: 0, 0.05, and 0.08wt%) with thickness of (150 ± 25 nm) have been deposited on glass substrates by chemical vapor deposition by using selenium, tellurium and indium whose purity is (99.99%) compound alloy. The electrical and optical properties of the thin films were analyzed. The effects of In-doping concentration on the thermoelectric properties of the thin films were investigated by room-temperature measurement of the See beck coefficient and electrical resistivity. The thermoelectric power factor shows the best result at 0.05wt% in doping. The See beck coefficients are positive with increasing in doping concentration from 0 to 0.08wt%. And the thin films show p-type conduction. For optical properties, the transmission of all samples was approximated to 90%.
基金supported by the Joints Fund of the National Natural Science Foundation of China(Grant No.U23A20349)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.62204126,62305171,62304113)+3 种基金the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20230361,BK20241464)the Natural Science Foundation of Jiangsu Higher Education Institutions(Grant No.23KJB510017)the Jiangsu Provincial Team of Innovation and Entrepreneurship(Grant No.JSSCTD202351)the Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant No.XK1060921119).
文摘Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD.Thanks to the formation of a depletion layer on the Sn-Ga_(2)O_(3) side at the homogeneous interface,a self-powered supply with an open-circuit voltage of~100 mV is successfully achieved.Moreover,a peculiar phenomenon that the rectification direction of theβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) n-N homojunction device can be controlled by light irradiation is also worthy of attention,which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation.In this case,the photo-to-dark current ratio can reach up to 1.19×105 under the voltage of 5 V.To a certain extent,this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.
基金the National Natural Science Foundation of China(Nos.91833303,51911530155,91733302,22001187,and 52062019)the Key Research and Development Program of Zhejiang Province(No.2020C01001)the Natural Science Research Foundation of Jiangsu Higher Education Institutions(No.20KJB150032).
文摘Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)with high work functions are generally used to achieve efficient hole injection.In these devices,Fermi-level pinning,a phenomenon often observed in heterojunctions involving organic semiconductors,can take place in the hole-injection/hole-transporting interfaces.However,an in-depth understanding of the impacts of Fermi-level pinning at the hole-injection/hole-transporting interfaces on the operation and performance of QLEDs is still lacking.Here,we develop a set of NiOx HILs with controlled work functions of 5.2–5.9 eV to investigate QLEDs with Fermi-level pinning at the hole-injection/hole-transporting interfaces.The results show that despite that Fermi-level pinning induces identical apparent hole-injection barriers,the red QLEDs using HILs with higher work functions show improved efficiency roll-off and better operational stability.Remarkably,the devices using the NiOx HILs with a work function of 5.9 eV demonstrate a peak external quantum efficiency of~18.0%and a long T95 operational lifetime of 8,800 h at 1,000 cd·m^(−2),representing the best-performing QLEDs with inorganic HILs.Our work provides a key design principle for future developments of the hole-injection/hole-transporting interfaces of QLEDs.
基金National Natural Science Foundation of China,Grant/Award Number:62174151Natural Science Foundation of Zhejiang Province,Grant/Award Numbers:LZ22F040003,Q21A050007。
文摘A main challenge for the development of two-dimensional devices based on atomically thin transition-metal dichalcogenides(TMDs)is the realization of metal–semiconductor junctions(MSJs)with low contact resistance and high charge transport capability.However,traditional metal–TMD junctions usually suffer from strong Fermi-level pinning(FLP)and chemical disorder at the interfaces,resulting in weak device performance and high energy consump-tion.By means of high-throughput first-principles calculations,we report an attractive solution via the formation of van der Waals(vdW)contacts between metallic and semiconducting TMDs.We apply a phase-engineering strategy to create a monolayer TMD database for achieving a wide range of work func-tions and band gaps,hence offering a large degree of freedom to construct TMD vdW MSJs with desired contact types.The Schottky barrier heights and contact types of 728 MSJs have been identified and they exhibit weak FLP(-0.62 to-0.90)as compared with the traditional metal–TMD junctions.We find that the interfacial interactions of the MSJs bring a delicate competition between the FLP strength and carrier tunneling efficiency,which can be uti-lized to screen high-performance MSJs.Based on a set of screening criteria,four potential TMD vdW MSJs(e.g.,NiTe_(2)/ZrSe_(2),NiTe_(2)/PdSe_(2),HfTe_(2)/PdTe_(2),TaSe_(2)/MoTe_(2))with Ohmic contact,weak FLP,and high carrier tunneling probability have been predicted.This work not only provides a fundamental understanding of contact properties of TMD vdW MSJs but also renders their huge potential for electronics and optoelectronics.
基金supported by the National Natural Science Foundation of China(No.51502234)the Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China(No.15JS040)
文摘The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical properties.The resistivity and electron mobility–lifetime product of high resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT1 and low resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT2 were tested respectively.Their deep-level defects were identified by thermally stimulated current（TSC）spectroscopy and thermoelectric effect spectroscopy（TEES）respectively.Then the trap-related parameters were characterized by the simultaneous multiple peak analysis（SIMPA）method.The deep donor level（EDD/dominating dark current was calculated by the relationship between dark current and temperature.The Fermi-level was characterized by current–voltage measurements of temperature dependence.The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy.The results show the traps concentration and capture cross section of CZT1 are lower than CZT2,so its electron mobility–lifetime product is greater than CZT2.The Fermi-level of CZT1 is closer to the middle gap than CZT2.The degree of Fermi-level pinned by EDDof CZT1 is larger than CZT2.It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges.
