摘要
为系统研究锗表面自组装单分子膜对费米钉扎效应的调控效果,首先在锗表面形成乙烯基膦酸二乙酯(DVP)的自组装单分子膜,然后从肖特基势垒、表面均匀性、稳定性的角度全面研究去费米钉扎效果。研究结果显示,DVP单分子膜能够有效释放费米钉扎,在p型锗上形成0.50 eV的肖特基势垒;在n型锗上使肖特基势垒由0.52 eV下降至0.44 eV。然而,DVP单分子膜的调控效果不均匀,p型锗上的肖特基势垒存在12.2%的变化量,原因在于表面悬挂键没有被完全钝化。此外,DVP分子膜的去费米钉扎效果维持48 h后迅速退化,此现象归因于锗表面复杂的化学特性引起的不致密分子膜。
In this study,a self-assembled diethyl vinylphosphonate(DVP)monolayer was grafted onto a germanium surface to investigate the modulation effect of self-assembled molecular monolayers on the Fermi level depinning on a germanium surface.Subsequently,the Fermi level depinning effect was comprehensively studied by analyzing the Schottky barrier height,uniformity,and stability.Experimental results demonstrated that DVP monolayers effectively alleviated the Fermi level pinning effect by forming a Schottky barrier of 0.50 eV on p-type germanium and reducing the Schottky barrier from 0.52 eV to 0.44 eV on n-type germanium.However,the depinning effect of the DVP monolayer resulted in a surface inhomogeneity of 12.2%among the samples of p-type germanium.We attributed this inhomogeneity to the incomplete passivation of the dangling bonds on the germanium surface.Furthermore,the Fermi level depinning effect of the DVP molecular monolayer degraded drastically after 48 h,which was attributed to the non-compact DVP monolayer caused by the complex chemical properties of the germanium surface.
作者
郭玉欣
张贵银
李云爻
高雪娇
GUO Yuxin;ZHANG Guiyin;LI Yunyao;GAO Xuejiao(Department of Mathematics and Physics,North China Electric Power University,Baoding 071000,CHN;Hebei Key Laboratory of Physics and Energy Technology,Baoding 071000,CHN)
出处
《半导体光电》
北大核心
2025年第4期687-692,共6页
Semiconductor Optoelectronics
基金
国家自然科学基金青年项目(62205107)。
关键词
锗
自组装单分子膜
费米钉扎
均匀性
稳定性
germanium
self-assembled molecular monolayer
Fermi-level depinning
inhomogeneity
stability
