Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was pr...Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD.Thanks to the formation of a depletion layer on the Sn-Ga_(2)O_(3) side at the homogeneous interface,a self-powered supply with an open-circuit voltage of~100 mV is successfully achieved.Moreover,a peculiar phenomenon that the rectification direction of theβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) n-N homojunction device can be controlled by light irradiation is also worthy of attention,which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation.In this case,the photo-to-dark current ratio can reach up to 1.19×105 under the voltage of 5 V.To a certain extent,this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.展开更多
Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)wi...Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)with high work functions are generally used to achieve efficient hole injection.In these devices,Fermi-level pinning,a phenomenon often observed in heterojunctions involving organic semiconductors,can take place in the hole-injection/hole-transporting interfaces.However,an in-depth understanding of the impacts of Fermi-level pinning at the hole-injection/hole-transporting interfaces on the operation and performance of QLEDs is still lacking.Here,we develop a set of NiOx HILs with controlled work functions of 5.2–5.9 eV to investigate QLEDs with Fermi-level pinning at the hole-injection/hole-transporting interfaces.The results show that despite that Fermi-level pinning induces identical apparent hole-injection barriers,the red QLEDs using HILs with higher work functions show improved efficiency roll-off and better operational stability.Remarkably,the devices using the NiOx HILs with a work function of 5.9 eV demonstrate a peak external quantum efficiency of~18.0%and a long T95 operational lifetime of 8,800 h at 1,000 cd·m^(−2),representing the best-performing QLEDs with inorganic HILs.Our work provides a key design principle for future developments of the hole-injection/hole-transporting interfaces of QLEDs.展开更多
基金supported by the Joints Fund of the National Natural Science Foundation of China(Grant No.U23A20349)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.62204126,62305171,62304113)+3 种基金the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20230361,BK20241464)the Natural Science Foundation of Jiangsu Higher Education Institutions(Grant No.23KJB510017)the Jiangsu Provincial Team of Innovation and Entrepreneurship(Grant No.JSSCTD202351)the Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant No.XK1060921119).
文摘Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD.Thanks to the formation of a depletion layer on the Sn-Ga_(2)O_(3) side at the homogeneous interface,a self-powered supply with an open-circuit voltage of~100 mV is successfully achieved.Moreover,a peculiar phenomenon that the rectification direction of theβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) n-N homojunction device can be controlled by light irradiation is also worthy of attention,which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation.In this case,the photo-to-dark current ratio can reach up to 1.19×105 under the voltage of 5 V.To a certain extent,this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.
基金the National Natural Science Foundation of China(Nos.91833303,51911530155,91733302,22001187,and 52062019)the Key Research and Development Program of Zhejiang Province(No.2020C01001)the Natural Science Research Foundation of Jiangsu Higher Education Institutions(No.20KJB150032).
文摘Quantum-dot light-emitting diodes(QLEDs)are multilayer electroluminescent devices promising for next-generation display and solid-state-lighting technologies.In the state-of-the-art QLEDs,hole-injection layers(HILs)with high work functions are generally used to achieve efficient hole injection.In these devices,Fermi-level pinning,a phenomenon often observed in heterojunctions involving organic semiconductors,can take place in the hole-injection/hole-transporting interfaces.However,an in-depth understanding of the impacts of Fermi-level pinning at the hole-injection/hole-transporting interfaces on the operation and performance of QLEDs is still lacking.Here,we develop a set of NiOx HILs with controlled work functions of 5.2–5.9 eV to investigate QLEDs with Fermi-level pinning at the hole-injection/hole-transporting interfaces.The results show that despite that Fermi-level pinning induces identical apparent hole-injection barriers,the red QLEDs using HILs with higher work functions show improved efficiency roll-off and better operational stability.Remarkably,the devices using the NiOx HILs with a work function of 5.9 eV demonstrate a peak external quantum efficiency of~18.0%and a long T95 operational lifetime of 8,800 h at 1,000 cd·m^(−2),representing the best-performing QLEDs with inorganic HILs.Our work provides a key design principle for future developments of the hole-injection/hole-transporting interfaces of QLEDs.
