The dynamic avalanche effect is a critical factor influencing the performance and reliability of the field-stop insulated gate bipolar transistors(FS-IGBT).Unclamped inductive switching(UIS)is the primary method for t...The dynamic avalanche effect is a critical factor influencing the performance and reliability of the field-stop insulated gate bipolar transistors(FS-IGBT).Unclamped inductive switching(UIS)is the primary method for testing the dynamic avalanche capability of FS-IGBTs.Numerous studies have demonstrated that factors such as device structure,avalanche-generating current filaments,and electrical parameters influence the dynamic avalanche effect of the FS-IGBT.However,few studies have focused on enhancing the avalanche reliability of the FS-IGBT by adjusting circuit parameters during operation.In this paper,the dynamic avalanche effect of the FS-IGBT under UIS conditions is comprehensively investigated through a series of comparative experiments with varying circuit parameters,including bus voltage V_(DC),gate voltage V_(G),gate resistance R_(g),load inductance L,and temperature TC.Furthermore,a method to enhance the dynamic avalanche reliability of the FS-IGBT under UIS by optimizing circuit parameters is proposed.In practical applications,reducing gate voltage,increasing load inductance,and lowering temperature can effectively improve the dynamic avalanche capability of the FS-IGBT.展开更多
主要研究1200 V IGBT器件的性能优化方法。理论分析了IGBT结构参数与其主要性能的关系,按1200 V IGBT器件击穿电压和饱和压降的设计要求,重点讨论了FS、JFET注入、延长JFET退火时间和减小Pring注入剂量对IGBT器件击穿电压(BV)和饱和压降...主要研究1200 V IGBT器件的性能优化方法。理论分析了IGBT结构参数与其主要性能的关系,按1200 V IGBT器件击穿电压和饱和压降的设计要求,重点讨论了FS、JFET注入、延长JFET退火时间和减小Pring注入剂量对IGBT器件击穿电压(BV)和饱和压降(Vdson)的影响,最终得到了满足器件设计要求的最佳性能参数。展开更多
A novel trench field stop （FS） insulated gate bipolar transistor （IGBT） with a trench shorted anode （TSA） is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown v...A novel trench field stop （FS） insulated gate bipolar transistor （IGBT） with a trench shorted anode （TSA） is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop.展开更多
基金supported in part by the National Natural Science Foundation of China under Grant 62071073in part by the Fundamental Research Funds for Central Universities under Grant 2023CDJXY-041in part by the Foundation from Guangxi Key Laboratory of Optoelectronic Information Processing under Grant GD20201.
文摘The dynamic avalanche effect is a critical factor influencing the performance and reliability of the field-stop insulated gate bipolar transistors(FS-IGBT).Unclamped inductive switching(UIS)is the primary method for testing the dynamic avalanche capability of FS-IGBTs.Numerous studies have demonstrated that factors such as device structure,avalanche-generating current filaments,and electrical parameters influence the dynamic avalanche effect of the FS-IGBT.However,few studies have focused on enhancing the avalanche reliability of the FS-IGBT by adjusting circuit parameters during operation.In this paper,the dynamic avalanche effect of the FS-IGBT under UIS conditions is comprehensively investigated through a series of comparative experiments with varying circuit parameters,including bus voltage V_(DC),gate voltage V_(G),gate resistance R_(g),load inductance L,and temperature TC.Furthermore,a method to enhance the dynamic avalanche reliability of the FS-IGBT under UIS by optimizing circuit parameters is proposed.In practical applications,reducing gate voltage,increasing load inductance,and lowering temperature can effectively improve the dynamic avalanche capability of the FS-IGBT.
文摘主要研究1200 V IGBT器件的性能优化方法。理论分析了IGBT结构参数与其主要性能的关系,按1200 V IGBT器件击穿电压和饱和压降的设计要求,重点讨论了FS、JFET注入、延长JFET退火时间和减小Pring注入剂量对IGBT器件击穿电压(BV)和饱和压降(Vdson)的影响,最终得到了满足器件设计要求的最佳性能参数。
基金Project supported by the National Natural Science Foundation of China(No.61274080)the Postdoctoral Science Foundation of China(No.2013M541585)
文摘A novel trench field stop （FS） insulated gate bipolar transistor （IGBT） with a trench shorted anode （TSA） is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop.
