摘要
The dynamic avalanche effect is a critical factor influencing the performance and reliability of the field-stop insulated gate bipolar transistors(FS-IGBT).Unclamped inductive switching(UIS)is the primary method for testing the dynamic avalanche capability of FS-IGBTs.Numerous studies have demonstrated that factors such as device structure,avalanche-generating current filaments,and electrical parameters influence the dynamic avalanche effect of the FS-IGBT.However,few studies have focused on enhancing the avalanche reliability of the FS-IGBT by adjusting circuit parameters during operation.In this paper,the dynamic avalanche effect of the FS-IGBT under UIS conditions is comprehensively investigated through a series of comparative experiments with varying circuit parameters,including bus voltage V_(DC),gate voltage V_(G),gate resistance R_(g),load inductance L,and temperature TC.Furthermore,a method to enhance the dynamic avalanche reliability of the FS-IGBT under UIS by optimizing circuit parameters is proposed.In practical applications,reducing gate voltage,increasing load inductance,and lowering temperature can effectively improve the dynamic avalanche capability of the FS-IGBT.
基金
supported in part by the National Natural Science Foundation of China under Grant 62071073
in part by the Fundamental Research Funds for Central Universities under Grant 2023CDJXY-041
in part by the Foundation from Guangxi Key Laboratory of Optoelectronic Information Processing under Grant GD20201.
