With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of Si...With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.展开更多
A novel phase-locked loop( PLL)-based closed-loop driving circuit with ultra-low-noise trans-impedance amplifier( TIA) is proposed. The TIA is optimized to achieve ultra-low input-referred current noise. To track driv...A novel phase-locked loop( PLL)-based closed-loop driving circuit with ultra-low-noise trans-impedance amplifier( TIA) is proposed. The TIA is optimized to achieve ultra-low input-referred current noise. To track drive-mode resonant frequency and reduce frequency jitter of actuation voltage,a PLL-based driving technique is adopted. Implemented on printed circuit board( PCB),the proposed driving loop has successfully excited MEMS element into resonance,with a settling time of 3 s. The stable frequency and amplitude of TIA output voltage are 10.14 KHz and 800 mVPP,respectively. With sense-channel electronics,the gyroscope exhibits a scale factor of 0.04 mV/°/s and a bias instability of 57.6°/h,which demonstrates the feasibility of the proposed driving circuit.展开更多
The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power so...The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.展开更多
Novel improved power metal oxide semiconductor field effect transistor （MOSFET） drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improv...Novel improved power metal oxide semiconductor field effect transistor （MOSFET） drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW.展开更多
The essential requirements of IGBT drive circuit is expounded.The short-circuit characteristic and over-current protection of the IGBT are described in detail.Finally,the practical drive and protection circuits are de...The essential requirements of IGBT drive circuit is expounded.The short-circuit characteristic and over-current protection of the IGBT are described in detail.Finally,the practical drive and protection circuits are designed.The practical results show that the circuit is good in performance.展开更多
A top-down design methodology is proposed for the design of TFT-LCD one-chip driver ICs,and a 260k color, 176RGB× 220-dot TFT-LCD one-chip driver IC is successfully developed with silicon verification. This IC is...A top-down design methodology is proposed for the design of TFT-LCD one-chip driver ICs,and a 260k color, 176RGB× 220-dot TFT-LCD one-chip driver IC is successfully developed with silicon verification. This IC is a typical mixed-signal VLSI and is implemented by a 0.18μm HV CMOS process. The static power dissipation is about 5mW for 260k color display mode,and the settling time of the output grayscale voltages within 0.2% error is less than 26μs.展开更多
The digitalization of arc welding power source mainly depends on the digitalization of arc welding inverter,so that main circuit and controlling system can give full play to advantages.Digital switching control makes ...The digitalization of arc welding power source mainly depends on the digitalization of arc welding inverter,so that main circuit and controlling system can give full play to advantages.Digital switching control makes main circuit digital and DSP and/or MCU makes controlling system,digital.So IGBT driving circuit,as a tie of main circuit and controlling system,should also be got digitalized.Thus,a digital driving circuit based on optocoupler device HCPL-316 J is provided.Some testing experiments were done.After driving testing,the driving circuit certificates that driving waveforms satisfy the requirements of arc welding power source and the driving circuit is reasonably and simply designed.And the driving circuit has high controlling precision and reliability.No-load-voltage testing and welding external characteristic testing prove that the driving circuit can be applied in arc welding power source.展开更多
Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with...Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro- posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the paramete...展开更多
An innovative 3-phase AC (Alternative Current) drive circuit for the seismic disc in micro-gyroscopes is designed and verified by computer simulations and experiments. The in-plane dynamic model of the seismic disc wi...An innovative 3-phase AC (Alternative Current) drive circuit for the seismic disc in micro-gyroscopes is designed and verified by computer simulations and experiments. The in-plane dynamic model of the seismic disc with mass eccentricity and air gap against the centre bearing and the mathematic expression of two sinusoidal magnetic fields are developed respectively. In order to prevent the seismic disc from collision with the centre bearing and the EM (Electromagnetic) poles, an anti-collision controller is established by employing two Look-up tables which define the intensity of the applied current to the EM poles. Self-sensing technique is included to measure the real-time offset of the disc by two orthogonal pairs of EM poles, without any additional sensors. The drive circuit under SPWM (Sinusoidal Pulse Width Modulation) operation and the anti-collision strategy are verified by intensive computer simulations via commercial software, OrCAD 9, and experiments.展开更多
基金the phased achievements of the postgraduate practice innovation project(SJCX22_1479)in Jiangsu Province.
文摘With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.
基金supported by the National Natural Science Foundation of China (grant: 61234007)the subproject of the Very Large Scale Integrated Circuits Manufacturing Equipment and Complete Technology (No.2 National Major Projects of China) (No.: 2013ZX02502-001)
文摘A novel phase-locked loop( PLL)-based closed-loop driving circuit with ultra-low-noise trans-impedance amplifier( TIA) is proposed. The TIA is optimized to achieve ultra-low input-referred current noise. To track drive-mode resonant frequency and reduce frequency jitter of actuation voltage,a PLL-based driving technique is adopted. Implemented on printed circuit board( PCB),the proposed driving loop has successfully excited MEMS element into resonance,with a settling time of 3 s. The stable frequency and amplitude of TIA output voltage are 10.14 KHz and 800 mVPP,respectively. With sense-channel electronics,the gyroscope exhibits a scale factor of 0.04 mV/°/s and a bias instability of 57.6°/h,which demonstrates the feasibility of the proposed driving circuit.
文摘The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.
基金supported by the National Natural Science Foundation of China(No.60876023).
文摘Novel improved power metal oxide semiconductor field effect transistor （MOSFET） drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW.
文摘The essential requirements of IGBT drive circuit is expounded.The short-circuit characteristic and over-current protection of the IGBT are described in detail.Finally,the practical drive and protection circuits are designed.The practical results show that the circuit is good in performance.
文摘A top-down design methodology is proposed for the design of TFT-LCD one-chip driver ICs,and a 260k color, 176RGB× 220-dot TFT-LCD one-chip driver IC is successfully developed with silicon verification. This IC is a typical mixed-signal VLSI and is implemented by a 0.18μm HV CMOS process. The static power dissipation is about 5mW for 260k color display mode,and the settling time of the output grayscale voltages within 0.2% error is less than 26μs.
文摘The digitalization of arc welding power source mainly depends on the digitalization of arc welding inverter,so that main circuit and controlling system can give full play to advantages.Digital switching control makes main circuit digital and DSP and/or MCU makes controlling system,digital.So IGBT driving circuit,as a tie of main circuit and controlling system,should also be got digitalized.Thus,a digital driving circuit based on optocoupler device HCPL-316 J is provided.Some testing experiments were done.After driving testing,the driving circuit certificates that driving waveforms satisfy the requirements of arc welding power source and the driving circuit is reasonably and simply designed.And the driving circuit has high controlling precision and reliability.No-load-voltage testing and welding external characteristic testing prove that the driving circuit can be applied in arc welding power source.
基金supported by the National Natural ScienceFoundation of China(Grant No.60437030)
文摘Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro- posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the paramete...
文摘An innovative 3-phase AC (Alternative Current) drive circuit for the seismic disc in micro-gyroscopes is designed and verified by computer simulations and experiments. The in-plane dynamic model of the seismic disc with mass eccentricity and air gap against the centre bearing and the mathematic expression of two sinusoidal magnetic fields are developed respectively. In order to prevent the seismic disc from collision with the centre bearing and the EM (Electromagnetic) poles, an anti-collision controller is established by employing two Look-up tables which define the intensity of the applied current to the EM poles. Self-sensing technique is included to measure the real-time offset of the disc by two orthogonal pairs of EM poles, without any additional sensors. The drive circuit under SPWM (Sinusoidal Pulse Width Modulation) operation and the anti-collision strategy are verified by intensive computer simulations via commercial software, OrCAD 9, and experiments.
