摘要
The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.
The insulated gate bipolar transistor（IGBT） has become the most popular controllable power switching de- vice in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correct- ly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules, based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.
出处
《电力电子技术》
CSCD
北大核心
2012年第12期60-61,66,共3页
Power Electronics
