Ⅰ. INTRODUCTION The study on DX center has recently received much more attention. Its known composition-dependent features can be summerized below. There is a shallow and deep level related to Si, Sn and Te donor imp...Ⅰ. INTRODUCTION The study on DX center has recently received much more attention. Its known composition-dependent features can be summerized below. There is a shallow and deep level related to Si, Sn and Te donor impurities whose concentration ratio (N_S/N_D) depends only on AlAs mole fraction, not on the methods and conditions of crystal growth as shown in Fig. 1. Both binding energy of deep level and intensity of persistent-photoconductivity (PPC) at low temperature depend pronouncedly on AlAs-展开更多
基金Project supported by the National Natural Science Foundation of China
文摘Ⅰ. INTRODUCTION The study on DX center has recently received much more attention. Its known composition-dependent features can be summerized below. There is a shallow and deep level related to Si, Sn and Te donor impurities whose concentration ratio (N_S/N_D) depends only on AlAs mole fraction, not on the methods and conditions of crystal growth as shown in Fig. 1. Both binding energy of deep level and intensity of persistent-photoconductivity (PPC) at low temperature depend pronouncedly on AlAs-
