Despite sulfurization offers the advantage of improving the photovoltaic performance in preparing Cu(In,Ga)Se2(CIGS)absorbers,deep level defects in the absorber and poor energy level alignment on the front surface are...Despite sulfurization offers the advantage of improving the photovoltaic performance in preparing Cu(In,Ga)Se2(CIGS)absorbers,deep level defects in the absorber and poor energy level alignment on the front surface are still main obstacles limiting the improvement of power co nversion efficiency(PCE)in sulfided CIGS solar cells.Herein,an in-situ Na doping strategy is proposed,in which the tailing effect of crystal growth is used to promote the sulfurization of CIGS absorbers.It is found that the grain growth is supported by Na incorporating due to the enrichment of NaSe_(x)near the upper surface.The high soluble Na during grain growth can not only suppress intrinsic In_(Cu) donor defects in the absorber,but also tailor S distribution in bulk and the band alignment at the heterojunction,which are both beneficial for the effective electron carriers.Meanwhile,the Na aggregation near the bottom of the absorber also contributes to the crystalline quality increasing and favorable ultra-thin MoSe_(2) formation at back contact,resulting in a reduced barrier height conducive to hole transport.PCE of the champion device is as high as 16.76%with a 28%increase.This research offers new insights into synthesizing CIGS solar cells and other chalcogenide solar cells with superior cell performance when using an intense sulfurization process.展开更多
Solution-processed Cu(In,Ga)Se_(2)(CIGS) solar cells suffer from serious carrier recombination and power conversion efficiency(PCE) loss because of the poor film properties and easy formation of defects.Herein, we pro...Solution-processed Cu(In,Ga)Se_(2)(CIGS) solar cells suffer from serious carrier recombination and power conversion efficiency(PCE) loss because of the poor film properties and easy formation of defects.Herein, we propose Ag&Se co-selenization strategy to enhance the crystallization and passivate harmful defects of the CIGS films. The formation of Ag-Se phase during the selenization process enables the formation of large grains and suppresses the deep level defects. It is found that Ag doping can enlarge the depletion region width, lower the Urbach energy and prolong the carrier lifetime. As a result, a champion solution-processed CIGS solar cell presents a high efficiency of 16.48% with the highly improved opencircuit voltage(VOC) of 662 m V and fill factor(FF) of 75.8%. This work provides an efficient strategy to prepare high quality solution-processed CIGS films for high-performance CIGS solar cells.展开更多
To evaluate the impact of zinc sulfate(ZnSO_(4)) concentration on the structural properties of the films,Cd_(1-x)Zn_(x)S thin films were formed on glass substrates using chemical bath deposition(CBD) in this study.The...To evaluate the impact of zinc sulfate(ZnSO_(4)) concentration on the structural properties of the films,Cd_(1-x)Zn_(x)S thin films were formed on glass substrates using chemical bath deposition(CBD) in this study.The effect of ZnSO_(4) precursor concentration on the surface morphology,optical properties,and morphological structure of the Cd_(1-x)Zn_(x)S films was investigated.To study the impact of zinc doping content on the performance metrics of Cu(In_(1-x)Ga_(x))Se_(2)(CIGS)cells in the experimental group and to improve the buffer layer thickness,simulations were run using one-dimensional solar cell capacitance simulator(SCAPS-1D) software.展开更多
基金supported by the National Natural Science Foundation of China(62204074)the Hebei Natural Science Foundation(F2022201061,F2023201025)+2 种基金the Open bidding for selecting the best candidates of Baoding(2023chuang206)the High-level Talent Research Startup Project of Hebei University(521100221085)the Post-graduate's Innovation Fund Project of Hebei University(HBU2024BS030).
文摘Despite sulfurization offers the advantage of improving the photovoltaic performance in preparing Cu(In,Ga)Se2(CIGS)absorbers,deep level defects in the absorber and poor energy level alignment on the front surface are still main obstacles limiting the improvement of power co nversion efficiency(PCE)in sulfided CIGS solar cells.Herein,an in-situ Na doping strategy is proposed,in which the tailing effect of crystal growth is used to promote the sulfurization of CIGS absorbers.It is found that the grain growth is supported by Na incorporating due to the enrichment of NaSe_(x)near the upper surface.The high soluble Na during grain growth can not only suppress intrinsic In_(Cu) donor defects in the absorber,but also tailor S distribution in bulk and the band alignment at the heterojunction,which are both beneficial for the effective electron carriers.Meanwhile,the Na aggregation near the bottom of the absorber also contributes to the crystalline quality increasing and favorable ultra-thin MoSe_(2) formation at back contact,resulting in a reduced barrier height conducive to hole transport.PCE of the champion device is as high as 16.76%with a 28%increase.This research offers new insights into synthesizing CIGS solar cells and other chalcogenide solar cells with superior cell performance when using an intense sulfurization process.
基金National Natural Science Foundation of China (62104061, 62074052, 61974173 and 52072327)。
文摘Solution-processed Cu(In,Ga)Se_(2)(CIGS) solar cells suffer from serious carrier recombination and power conversion efficiency(PCE) loss because of the poor film properties and easy formation of defects.Herein, we propose Ag&Se co-selenization strategy to enhance the crystallization and passivate harmful defects of the CIGS films. The formation of Ag-Se phase during the selenization process enables the formation of large grains and suppresses the deep level defects. It is found that Ag doping can enlarge the depletion region width, lower the Urbach energy and prolong the carrier lifetime. As a result, a champion solution-processed CIGS solar cell presents a high efficiency of 16.48% with the highly improved opencircuit voltage(VOC) of 662 m V and fill factor(FF) of 75.8%. This work provides an efficient strategy to prepare high quality solution-processed CIGS films for high-performance CIGS solar cells.
基金supported by the Science and Technology Innovation Development Program (No.70304901)。
文摘To evaluate the impact of zinc sulfate(ZnSO_(4)) concentration on the structural properties of the films,Cd_(1-x)Zn_(x)S thin films were formed on glass substrates using chemical bath deposition(CBD) in this study.The effect of ZnSO_(4) precursor concentration on the surface morphology,optical properties,and morphological structure of the Cd_(1-x)Zn_(x)S films was investigated.To study the impact of zinc doping content on the performance metrics of Cu(In_(1-x)Ga_(x))Se_(2)(CIGS)cells in the experimental group and to improve the buffer layer thickness,simulations were run using one-dimensional solar cell capacitance simulator(SCAPS-1D) software.
