The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary t...The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.展开更多
A combination of self-aligned fluoride-based plasma treatment and post-gate rapid thermal annealing was developed to fabricate a novel 120-nm T-shaped gate normally-off metamorphic Al0.49In0.51As/Ga0.47In0.53 As HEMT ...A combination of self-aligned fluoride-based plasma treatment and post-gate rapid thermal annealing was developed to fabricate a novel 120-nm T-shaped gate normally-off metamorphic Al0.49In0.51As/Ga0.47In0.53 As HEMT device on a Si substrate grown by metal-organic chemical vapor deposition（MOCVD）. A shift of the threshold voltage, from-0.42 V to 0.11 V was obtained and the shift can be effectively adjusted by the process parameter of CF4 plasma treatment. Furthermore, a side benefit of reducing the leakage current of the device up to two orders of magnitude was also observed.E-mode transistors with 120 nm gate length own fTup to 160 GHz and fmax of 140 GHz. These characteristics imply the potential of the fluoride-based plasma treatment technology for the fabrication of monolithic enhancement/depletion-mode mHEMTs, which also encourage the massive production with this low-cost technology.展开更多
文摘The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation,China(Grant No.61401373)the Fundamental Research Funds for Central University,China(Grant No.XDJK2013B004 and 2362014XK13)the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)
文摘A combination of self-aligned fluoride-based plasma treatment and post-gate rapid thermal annealing was developed to fabricate a novel 120-nm T-shaped gate normally-off metamorphic Al0.49In0.51As/Ga0.47In0.53 As HEMT device on a Si substrate grown by metal-organic chemical vapor deposition（MOCVD）. A shift of the threshold voltage, from-0.42 V to 0.11 V was obtained and the shift can be effectively adjusted by the process parameter of CF4 plasma treatment. Furthermore, a side benefit of reducing the leakage current of the device up to two orders of magnitude was also observed.E-mode transistors with 120 nm gate length own fTup to 160 GHz and fmax of 140 GHz. These characteristics imply the potential of the fluoride-based plasma treatment technology for the fabrication of monolithic enhancement/depletion-mode mHEMTs, which also encourage the massive production with this low-cost technology.
