The low-melting glass of Bi2O_(3)-B2O_(3)-SiO_(2)(BiBSi)system was used for the first time for laser sealing of vacuum glazing.Under the condition of constant boron content,how the structure and properties vary with B...The low-melting glass of Bi2O_(3)-B2O_(3)-SiO_(2)(BiBSi)system was used for the first time for laser sealing of vacuum glazing.Under the condition of constant boron content,how the structure and properties vary with Bi/Si ratio in low-melting glass was investigated.In addition,the relationships between laser power,low-melting glass solder with different Bi/Si ratios and laser sealing shear strength were revealed.The results show that a decrease in the Bi/Si ratio can cause a contraction of the glass network of the low-melting glass,leading to an increase of its characteristic temperature and a decrease of its coefficient of thermal expansion.During laser sealing,the copper ions in the low-melting glass play an endothermic role.A change in the Bi/Si ratio will affect the valence state transition of the copper ions in the low-melting glass.The absorbance of the low-melting glass does not follow the expected correlation with the Bi/Si ratio,but shows a linear correlation with the content of divalent copper ions.The greater the concentration of divalent copper ions,the greater the absorbance of the low-melting glass,and the lower the laser power required for laser sealing.The shear strength of the low melting glass solder after laser sealing was tested,and it was found that the maximum shear strength of Z1 glass sample was the highest up to 2.67 MPa.展开更多
The semimetal Bi has received increasing interest as an alternative to noble metals for use in plasmonic photocatalysis. To enhance the photocatalytic efficiency of metallic Bi, Bi microspheres modified by SiO2 nanopa...The semimetal Bi has received increasing interest as an alternative to noble metals for use in plasmonic photocatalysis. To enhance the photocatalytic efficiency of metallic Bi, Bi microspheres modified by SiO2 nanoparticles were fabricated by a facile method. Bi-O-Si bonds were formed between Bi and SiO2, and acted as a transportation channel for hot electrons. The SiO2@Bi microspheres exhibited an enhanced plasmon-mediated photocatalytic activity for the removal of NO in air under 280 nm light irradiation, as a result of the enlarged specific surface areas and the promotion of electron transfer via the Bi-O-Si bonds. The reaction mechanism of photocatalytic oxidation of NO by SiO2@Bi was revealed with electron spin resonance and in situ diffuse reflectance infrared Fourier transform spectroscopy experiments, and involved the chain reaction NO -> NO2 -> NO3- with center dot OH and center dot O-2(-) radicals as the main reactive species. The present work could provide new insights into the in-depth mechanistic understanding of Bi plasmonic photocatalysis and the design of high-performance Bi-based photocatalysts. (C) 2017, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.展开更多
A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties ar...A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.展开更多
At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investiga...At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.展开更多
基金Funded by the National Natural Science Foundation of China(No.52472012)Opening Project of State Silica-Based Materials Laboratory of Anhui Province(No.2022KF11)the Research and Development of Glass Powder for Laser Sealing and Its Sealing Technology(No.K24556)。
文摘The low-melting glass of Bi2O_(3)-B2O_(3)-SiO_(2)(BiBSi)system was used for the first time for laser sealing of vacuum glazing.Under the condition of constant boron content,how the structure and properties vary with Bi/Si ratio in low-melting glass was investigated.In addition,the relationships between laser power,low-melting glass solder with different Bi/Si ratios and laser sealing shear strength were revealed.The results show that a decrease in the Bi/Si ratio can cause a contraction of the glass network of the low-melting glass,leading to an increase of its characteristic temperature and a decrease of its coefficient of thermal expansion.During laser sealing,the copper ions in the low-melting glass play an endothermic role.A change in the Bi/Si ratio will affect the valence state transition of the copper ions in the low-melting glass.The absorbance of the low-melting glass does not follow the expected correlation with the Bi/Si ratio,but shows a linear correlation with the content of divalent copper ions.The greater the concentration of divalent copper ions,the greater the absorbance of the low-melting glass,and the lower the laser power required for laser sealing.The shear strength of the low melting glass solder after laser sealing was tested,and it was found that the maximum shear strength of Z1 glass sample was the highest up to 2.67 MPa.
基金supported by the National Natural Science Foundation of China(21501016,51478070,21406022,21676037)the National Key R&D Project(2016YFC0204702)+4 种基金the Innovative Research Team of Chongqing(CXTDG201602014)the Natural Science Foundation of Chongqing(cstc2016jcyjA 0481,cstc2015jcyjA 0061)the Science and Technology Project of Chongqing Education Commission(KJ1600625,KJ1500637)the Application and Basic Science Project of Ministry of Transport of People's Republic of China(2015319814100)the Innovative Research Project from CTBU(yjscxx2016-060-36)~~
文摘The semimetal Bi has received increasing interest as an alternative to noble metals for use in plasmonic photocatalysis. To enhance the photocatalytic efficiency of metallic Bi, Bi microspheres modified by SiO2 nanoparticles were fabricated by a facile method. Bi-O-Si bonds were formed between Bi and SiO2, and acted as a transportation channel for hot electrons. The SiO2@Bi microspheres exhibited an enhanced plasmon-mediated photocatalytic activity for the removal of NO in air under 280 nm light irradiation, as a result of the enlarged specific surface areas and the promotion of electron transfer via the Bi-O-Si bonds. The reaction mechanism of photocatalytic oxidation of NO by SiO2@Bi was revealed with electron spin resonance and in situ diffuse reflectance infrared Fourier transform spectroscopy experiments, and involved the chain reaction NO -> NO2 -> NO3- with center dot OH and center dot O-2(-) radicals as the main reactive species. The present work could provide new insights into the in-depth mechanistic understanding of Bi plasmonic photocatalysis and the design of high-performance Bi-based photocatalysts. (C) 2017, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
基金Project supported by the National Basic Research Program of China (Grant No.2011CB612305)the National Natural Science Foundation of China (Grant No.51372064)+1 种基金the One Hundred Persons Project of Hebei Province of China (Grant No.CPRC001)the Science and Technology Research Project of Colleges and Universities in Hebei Province,China (Grant No.QN20131040)
文摘A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.
文摘At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.
