摘要
自从Maeda等人发现Bi-Sr-Ca-Cu-O材料的超导电性以来,Bi系体材料和薄膜材料的研究已取得了重大的进展。为了实际应用的需要,直接在Si或SiO<sub>2</sub>衬底上制备Bi-Sr-Ca-Cu-O膜是很必要的,因此需要知道Si对Bi系材料超导电性的影响。本文报道了掺Si对Bi-Pb-Sr-Ca-Cu-O体材料的超导电性的影响的初步研究结果。
The effect of the Si-doping on the superconducting properties and microstructure of Bi-Pb-Sr-Ca-Cu-O bulk materials has been investigated. It has been found that the superconducting transition temperature showed no considerable change in Si-doped Bi-Pb-Sr-Ca-Cu-O materials, while the critical current density was fCund to be significantly improved. The microstructures of both Si-doped and Sifree Bi-Pb-Sr-Ca-Cu-O materials were characterized by bar-shape grains and indeterminate shape grains, but the bar-shape grains in the Si-doped materials were much more and longer than those in the Si-free materials. The microstructural change can be considered to be one of the possible reasons to lead to the improvment of the critical current density in the Si-doped Bi-Pb-Sr-Ca-Cu-O materials.
出处
《吉林大学自然科学学报》
CAS
CSCD
1991年第1期55-58,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
超导电性
微结构
BIPBSRCACUO
SI
superconducting properties, microstructure, Bi-Pb-Sr-Ca-Cu-O bulk materils, Si-doping
