Bismuth oxyselenide(Bi_(2)O_(2)Se),a novel quasi-two-dimensional charge-carrying semiconductor,is recognized as one of the most promising emerging platforms for next-generation semiconductor devices.Recent advancement...Bismuth oxyselenide(Bi_(2)O_(2)Se),a novel quasi-two-dimensional charge-carrying semiconductor,is recognized as one of the most promising emerging platforms for next-generation semiconductor devices.Recent advancements in the development of diverse Bi_(2)O_(2)Se heterojunctions have unveiled extensive potential applications in both electronics and optoelectronics.However,achieving an in-depth understanding of band alignment and particularly interface dynamics remains a significant challenge.In this study,we conduct a comprehensive experimental investigation into band alignment utilizing high-resolution X-ray photoelectron spectroscopy(HRXPS),while also thoroughly discussing the properties of interface states.Our findings reveal that ultrathin films of Bi_(2)O_(2)Se grown on SrTiO_(3)(with TiO_(2)(001)termination)exhibit Type-I(straddling gap)band alignment characterized by a valence band offset(VBO)of approximately 1.77±0.04 eV and a conduction band offset(CBO)around 0.68±0.04 eV.Notably,when accounting for the influence of interface states,the bands at the interface display a herringbone configuration due to substantial built-in electric fields,which markedly deviate from conventional band alignments.Thus,our results provide valuable insights for advancing high-efficiency electronic and optoelectronic devices,particularly those where charge transfer is highly sensitive to interface states.展开更多
In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence ...In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence band offsets(VBO)of the three heterojunctions were measured by x-ray photoelectron spectroscopy(XPS),while the PtSe_(2)/n-GaN is 3.70±0.15 eV,PtSe_(2)/p-GaN is 0.264±0.15 eV,and PtSe_(2)/u-GaN is 3.02±0.15 eV.The conduction band offset(CBO)of the three heterojunctions was calculated from the material bandgap and VBO,while the PtSe_(2)/n-GaN is 0.61±0.15 eV,PtSe_(2)/p-GaN is 2.83±0.15 eV,and PtSe_(2)/u-GaN is 0.07±0.15 eV.This signifies that both PtSe_(2)/u-GaN and PtSe_(2)/p-GaN exhibit type-Ⅰband alignment,but the PtSe_(2)/n-GaN heterojunction has type-Ⅲband alignment.This signifies that the band engineering of PtSe_(2)/GaN heterojunction can be achieved by manipulating the concentration and type of doping,which is significantly relevant for the advancement of related devices through the realization of band alignment and the modulation of the material properties of the PtSe_(2)/GaN heterojunction.展开更多
In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and S...In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.展开更多
Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence ban...Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.展开更多
Aiming to achieve InAs quantum dots(QDs) with a long carrier lifetime,the effects of Sb component in cap layers on the band alignment of the InAs/GaAsSb QDs have been studied.InAs QDs with high density and uniformity ...Aiming to achieve InAs quantum dots(QDs) with a long carrier lifetime,the effects of Sb component in cap layers on the band alignment of the InAs/GaAsSb QDs have been studied.InAs QDs with high density and uniformity have been grown by molecular beam epitaxy.With increasing Sb composition,the InAs/GaAsSb QDs exhibit a significant redshift and broadening photoluminescence(PL).With a high Sb component of 22%,the longest wavelength emission of the InAs/GaAs_(0.78)Sb_(0.22) QDs occurs at 1.5 μm at room temperature.The power-dependence PL measurements indicate that with a low Sb component of 14%,the InAs/GaAs_(0.86)Sb_(0.14) QDs have a type-Ⅰ and a type-Ⅱ carrier recombination processes,respectively.With a high Sb component of 22%,the InAs/GaAs_(0.78)Sb_(0.22) QDs have a pure type-Ⅱ band alignment,with three type-Ⅱ carrier recombination processes.Extracted from time-resolved PL decay traces,the carrier lifetime of the InAs/GaAs_(0.78)Sb_(0.22) QDs reaches 16.86 ns,which is much longer than that of the InAs/GaAs_(0.86)Sb_(0.14) QDs(2.07 ns).These results obtained here are meaningful to realize high conversion efficiency intermediate-band QD solar cells and other opto-electronic device.展开更多
The band alignment at the front interfaces is crucial for the performance of Sb_(2)Se_(3) solar cell with superstrate configuration.Herein,a Sn O_(2)/Ti O_(2) thin film,demonstrated beneficial for carrier transport in...The band alignment at the front interfaces is crucial for the performance of Sb_(2)Se_(3) solar cell with superstrate configuration.Herein,a Sn O_(2)/Ti O_(2) thin film,demonstrated beneficial for carrier transport in Sb_(2)Se_(3) device by the first-principle calculation and experiment,is proposed to reduce the parasitic absorption caused by CdS and optimize the band alignment of Sb_(2)Se_(3) solar cell.Thanks to the desirable transmittance of SnO_(2)/TiO_(2) layer,the Sb_(2)Se_(3) solar cell with SnO_(2)/TiO_(2)/(CdS-38 nm) electron transport layer performances better than (CdS-70 nm)/Sb_(2)Se_(3) solar cell.The optimized band alignment,the reduced interface defects and the decreased current leakage of Sb_(2)Se_(3) solar cell enable the short-circuit current density,fill factor,open-circuit voltage and efficiency of the Sb_(2)Se_(3) solar cell increase by 26.7%,112%,33.1%and 250%respectively when comparing with TiO_(2)/Sb_(2)Se_(3) solar cell without modification.Finally,an easily prepared Sn O_(2)/Ti O_(2)/CdS ETL is successfully applied on Sb_(2)Se_(3) solar cell by the first time and contributes to the best efficiency of 7.0%in this work,which is remarkable for Sb_(2)Se_(3) solar cells free of hole transporting materials and toxic CdCl_(2) treatment.This work is expected to provide a valuable reference for future ETL design and band alignment for Sb_(2)Se_(3) solar cell and other optoelectronic devices.展开更多
The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron sp...The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.展开更多
The most important interface-related quantities determined by band alignment are the barrier heights for charge trans- port, given by the Fermi level position at the interface. Taking Pb（Zr, Ti）O3 （PZT） as a typic...The most important interface-related quantities determined by band alignment are the barrier heights for charge trans- port, given by the Fermi level position at the interface. Taking Pb（Zr, Ti）O3 （PZT） as a typical ferroelectric material and applying X-ray photoelectron spectroscopy （XPS）, we briefly review the interface formation and barrier heights at the inter- faces between PZT and electrodes made of various metals or conductive oxides. Polarization dependence of the Schottky barrier height at a ferroelectric/electrode interface is also directly observed using XPS.展开更多
A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/...A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.展开更多
The GaP-based dilute nitride direct band gap material Ga（NAsP） is gaining importance due to the monolithic integra- tion of laser diodes on Si microprocessors. The major advantage of this newly proposed laser materi...The GaP-based dilute nitride direct band gap material Ga（NAsP） is gaining importance due to the monolithic integra- tion of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga（NAsP）/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs on GaP substrates. We examine the effect of nitrogen （N） concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs with that of the GaNxAsyP1-x-y/Al2Ga1-2P QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and AI into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.展开更多
Band alignment between NiO_(x) and nonpolar GaN plane and between NiO_(x) and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the un...Band alignment between NiO_(x) and nonpolar GaN plane and between NiO_(x) and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiO_(x)/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiO_(x) films. By fitting the Ga 3 d spectrum obtained from the NiO_(x)/GaN interface, we find that relatively high Ga–O content at the interface corresponds to a small band offset. On the one hand, the high Ga–O content on the GaN surface will change the growth mode of NiO_(x). On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.展开更多
An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap...An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap of 4.85 e V.In addition,the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties.The GaO_(x)/diamond heterojunction shows a type-Ⅱstaggered band configuration,where the valence and conduction band offsets are 1.28 e V and 1.93 e V,respectively.These results confirm the feasibility of the use of n-GaO_(x)as a termination structure for diamond power devices.展开更多
Theε-Ga2O3 p-n heterojunctions(HJ)have been demonstrated using typical p-type oxide semiconductors(NiO or SnO).Theε-Ga2O3 thin film was heteroepitaxial grown by metal organic chemical vapor deposition(MOCVD)with thr...Theε-Ga2O3 p-n heterojunctions(HJ)have been demonstrated using typical p-type oxide semiconductors(NiO or SnO).Theε-Ga2O3 thin film was heteroepitaxial grown by metal organic chemical vapor deposition(MOCVD)with three-step growth method.The polycrystalline SnO and NiO thin films were deposited on theε-Ga2O3 thin film by electron-beam evaporation and thermal oxidation,respectively.The valence band offsets(VBO)were determined by x-ray photoelectron spectroscopy(XPS)to be 2.17 eV at SnO/ε-Ga2O3 and 1.7 eV at NiO/ε-Ga2O3.Considering the bandgaps determined by ultraviolet-visible spectroscopy,the conduction band offsets(CBO)of 0.11 eV at SnO/ε-Ga2O3 and 0.44 eV at NiO/ε-Ga2O3 were obtained.The type-Ⅱband diagrams have been drawn for both p-n HJs.The results are useful to understand the electronic structures at theε-Ga2O3 p-n HJ interface,and design optoelectronic devices based onε-Ga2O3 with novel functionality and improved performance.展开更多
A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectro...A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy, The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.展开更多
The efficiency of Cu2ZnSnS4(CZTS)solar cells is limited due to interfacial band misalignment and severe non-radiative recombination.ZnSnO(ZTO)is a promising Cd-free buffer layer,offering a potential for favorable band...The efficiency of Cu2ZnSnS4(CZTS)solar cells is limited due to interfacial band misalignment and severe non-radiative recombination.ZnSnO(ZTO)is a promising Cd-free buffer layer,offering a potential for favorable band alignment with CZTS absorber.Here,we demonstrate that optimizing the temperature-dependent deposition during reactive magnetron sputtering significantly promotes elemental interdiffusion.For the proposed CZTS/ZTO interface,a favorable“spike-like”band alignment is achieved,effectively enhancing the carrier transport efficiency and reducing the interfacial defect density.Furthermore,Zn diffusion mitigates CuZn(that is,copper atoms sit at sites normally occupied by zinc atoms)antisite defects,reducing the non-radiative recombination and improving the absorber quality.Finally,the champion device achieved the highest power conversion efficiency(PCE)of 10.90%by sputtering ZTO as buffer layer in CZTS solar cell so far,with a high open circuit voltage(VOC)of 740 mV and a fill factor(FF)of 61.79%.This strategy highlights the potential of sputtered ZTO as a scalable and eco-friendly buffer layer for Cd-free CZTS solar cells.展开更多
Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement,thus is a promising method to form 2D/2D and 2D/3D heterojunction.Considering the unique optical properties of C...Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement,thus is a promising method to form 2D/2D and 2D/3D heterojunction.Considering the unique optical properties of CsPbI_(3) and transition metal dichalcogenides(TMDCs),their heterostructure present potential applications in both photonics and optoelectronics fields.Here,we demonstrate selective growth of cubic phase CsPbI_(3) nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires(NWs)on monolayer WSe_(2).Furthermore,we show growth of CsPbI_(3) on both transferred WSe_(2) on copper grid and WSe_(2) based optoelectrical devices,providing a platform for structure analysis and device performance modification.Transmission electron microscopy(TEM)results reveal the epitaxial nature of cubic CsPbI_(3) phase.The revealed growth fundamental of CsPbI_(3) is universal valid for other twodimensional substrates,offering a great advantage to fabricate CsPbI_(3) based van der Waals heterostructures(vdWHs).X-ray photoelectron spectroscopy(XPS)and optical characterization confirm the type-II band alignment,resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower energy.The formation of WSe_(2)/CsPbI_(3) heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 nA.These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.展开更多
Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction ...Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.展开更多
Narrow-bandgap tin-lead(Sn-Pb)mixed perovskite solar cells(PSCs)play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit.A robust,chemically stable and lowte...Narrow-bandgap tin-lead(Sn-Pb)mixed perovskite solar cells(PSCs)play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit.A robust,chemically stable and lowtemperature-processed hole transporting layer(HTL)is essential for building high-efficiency Sn-Pb solar cells and perovskite tandem solar cells.Here,we explore a roomtemperature-processed NiOx(L-NiOx)HTL based on nanocrystals(NCs)for Sn-Pb PSCs.In comparison with hightemperature-annealed NiOx(H-NiOx)film,the L-NiOx film shows deeper valence band and lower trap density,which increases the built-in potential and reduces carrier recombination,leading to a power conversion efficiency of 18.77%,the record for NiOx-based narrow-bandgap PSCs.Furthermore,the device maintains about 96%of its original efficiency after 50 days.This work provides a robust and room-temperatureprocessed HTL for highly efficient and stable narrow-bandgap PSCs.展开更多
Constructing two-dimensional(2D)van der Waals heterostructures(vdWHs)can expand the electronic and optoelectronic applications of 2D semiconductors.However,the work on the 2D vdWHs with robust band alignment is still ...Constructing two-dimensional(2D)van der Waals heterostructures(vdWHs)can expand the electronic and optoelectronic applications of 2D semiconductors.However,the work on the 2D vdWHs with robust band alignment is still scarce.Here,we employ a global structure search approach to construct the vdWHs with monolayer MoSi_(2)N_(4)and widebandgap GeO_(2).The studies show that the GeO_(2)/MoSi_(2)N_(4)vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and typeII band alignment with GeO_(2)and MoSi_(2)N_(4)layers as the conduction band minimum(CBM)and valence band maximum(VBM),respectively.Also,the direct-to-indirect band gap transition can be achieved by applying biaxial strain.In particular,the 2D GeO_(2)/MoSi_(2)N_(4)vdWHs show a robust type-II band alignment under the effects of biaxial strain,interlayer distance and external electric field.The results provide a route to realize the robust type-II band alignment vdWHs,which is helpful for the implementation of optoelectronic nanodevices with stable characteristics.展开更多
Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.In this work,we report on the heter...Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.In this work,we report on the heteroepitaxial construction,band structure alignment and polarization engineering of the single-phasedκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with a valence band offset of(1.74±0.1)eV and a conduction band offset of(0.29■0.1)eV.Besides the band edge discontinuity,charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV,respectively,at theκ-Ga_(2)O_(3)surface andκ-Ga_(2)O_(3)/GaN interface.The polarization switching properties of ferroelectricκ-Ga_(2)O_(3)are identified with a remanent polarization of approximately 2.7μC/cm^(2)via the direct hysteresis remanent polarization/voltage(P-V)loop measurement.These findings allow the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunction for the application of power electronic devices,advanced memories and even ultra-low loss negative capacitance transistors.展开更多
基金supported by the National Natural Science Foundation of China(Nos.52072059,12304078,12274061 and 11774044)the Natural Science Foundation of Sichuan Province(No.2024NSFSC1384).
文摘Bismuth oxyselenide(Bi_(2)O_(2)Se),a novel quasi-two-dimensional charge-carrying semiconductor,is recognized as one of the most promising emerging platforms for next-generation semiconductor devices.Recent advancements in the development of diverse Bi_(2)O_(2)Se heterojunctions have unveiled extensive potential applications in both electronics and optoelectronics.However,achieving an in-depth understanding of band alignment and particularly interface dynamics remains a significant challenge.In this study,we conduct a comprehensive experimental investigation into band alignment utilizing high-resolution X-ray photoelectron spectroscopy(HRXPS),while also thoroughly discussing the properties of interface states.Our findings reveal that ultrathin films of Bi_(2)O_(2)Se grown on SrTiO_(3)(with TiO_(2)(001)termination)exhibit Type-I(straddling gap)band alignment characterized by a valence band offset(VBO)of approximately 1.77±0.04 eV and a conduction band offset(CBO)around 0.68±0.04 eV.Notably,when accounting for the influence of interface states,the bands at the interface display a herringbone configuration due to substantial built-in electric fields,which markedly deviate from conventional band alignments.Thus,our results provide valuable insights for advancing high-efficiency electronic and optoelectronic devices,particularly those where charge transfer is highly sensitive to interface states.
基金Project supported by the National Natural Science Foundation of China(Grant No.61874108)the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2024-04)the Gansu Provincial Scientific and Technologic Planning Program(Grant No.22ZD6GE016).
文摘In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence band offsets(VBO)of the three heterojunctions were measured by x-ray photoelectron spectroscopy(XPS),while the PtSe_(2)/n-GaN is 3.70±0.15 eV,PtSe_(2)/p-GaN is 0.264±0.15 eV,and PtSe_(2)/u-GaN is 3.02±0.15 eV.The conduction band offset(CBO)of the three heterojunctions was calculated from the material bandgap and VBO,while the PtSe_(2)/n-GaN is 0.61±0.15 eV,PtSe_(2)/p-GaN is 2.83±0.15 eV,and PtSe_(2)/u-GaN is 0.07±0.15 eV.This signifies that both PtSe_(2)/u-GaN and PtSe_(2)/p-GaN exhibit type-Ⅰband alignment,but the PtSe_(2)/n-GaN heterojunction has type-Ⅲband alignment.This signifies that the band engineering of PtSe_(2)/GaN heterojunction can be achieved by manipulating the concentration and type of doping,which is significantly relevant for the advancement of related devices through the realization of band alignment and the modulation of the material properties of the PtSe_(2)/GaN heterojunction.
基金supported by the National Natural Science Foundation of China(NSFC,No.62074048)the Key Research and Development Plan of Anhui Province(No.2022f04020007)the Natural Science Foundation of Anhui Province(No.2208085MF177)。
文摘In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083)
文摘Based on X-ray photoelectron spectroscopy （XPS）, influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition （ALD） are investigated in this paper. The measured valence band offset （VBO） value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lewd the VBO values of H2O-based and O3-based HfO2 to vary in different ways, which fits with the variation of fiat band （VFB） voltage.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2019YFB1503601 and 2017YFB0405302)the National Natural Science Foundation of China(Grant Nos.61574139 and U1738114)the Strategic Priority Research Program on Space Science,the Chinese Academy of Sciences(Grant No.XDA15051200)。
文摘Aiming to achieve InAs quantum dots(QDs) with a long carrier lifetime,the effects of Sb component in cap layers on the band alignment of the InAs/GaAsSb QDs have been studied.InAs QDs with high density and uniformity have been grown by molecular beam epitaxy.With increasing Sb composition,the InAs/GaAsSb QDs exhibit a significant redshift and broadening photoluminescence(PL).With a high Sb component of 22%,the longest wavelength emission of the InAs/GaAs_(0.78)Sb_(0.22) QDs occurs at 1.5 μm at room temperature.The power-dependence PL measurements indicate that with a low Sb component of 14%,the InAs/GaAs_(0.86)Sb_(0.14) QDs have a type-Ⅰ and a type-Ⅱ carrier recombination processes,respectively.With a high Sb component of 22%,the InAs/GaAs_(0.78)Sb_(0.22) QDs have a pure type-Ⅱ band alignment,with three type-Ⅱ carrier recombination processes.Extracted from time-resolved PL decay traces,the carrier lifetime of the InAs/GaAs_(0.78)Sb_(0.22) QDs reaches 16.86 ns,which is much longer than that of the InAs/GaAs_(0.86)Sb_(0.14) QDs(2.07 ns).These results obtained here are meaningful to realize high conversion efficiency intermediate-band QD solar cells and other opto-electronic device.
基金supported by the National Key R&D Program of China(2019YFB1503500)the National Natural Science Foundation of China(U1902218,11774187)the Postgraduate Education Innovation Project of Tianjin,China(2021YJSB002)。
文摘The band alignment at the front interfaces is crucial for the performance of Sb_(2)Se_(3) solar cell with superstrate configuration.Herein,a Sn O_(2)/Ti O_(2) thin film,demonstrated beneficial for carrier transport in Sb_(2)Se_(3) device by the first-principle calculation and experiment,is proposed to reduce the parasitic absorption caused by CdS and optimize the band alignment of Sb_(2)Se_(3) solar cell.Thanks to the desirable transmittance of SnO_(2)/TiO_(2) layer,the Sb_(2)Se_(3) solar cell with SnO_(2)/TiO_(2)/(CdS-38 nm) electron transport layer performances better than (CdS-70 nm)/Sb_(2)Se_(3) solar cell.The optimized band alignment,the reduced interface defects and the decreased current leakage of Sb_(2)Se_(3) solar cell enable the short-circuit current density,fill factor,open-circuit voltage and efficiency of the Sb_(2)Se_(3) solar cell increase by 26.7%,112%,33.1%and 250%respectively when comparing with TiO_(2)/Sb_(2)Se_(3) solar cell without modification.Finally,an easily prepared Sn O_(2)/Ti O_(2)/CdS ETL is successfully applied on Sb_(2)Se_(3) solar cell by the first time and contributes to the best efficiency of 7.0%in this work,which is remarkable for Sb_(2)Se_(3) solar cells free of hole transporting materials and toxic CdCl_(2) treatment.This work is expected to provide a valuable reference for future ETL design and band alignment for Sb_(2)Se_(3) solar cell and other optoelectronic devices.
基金financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)
文摘The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.
基金Project supported by the German Science Foundation(DFG)within the Collaborative Research Center SFB 595(Electrical Fatigue of Functional Materials)the National Natural Science Foundation of China(Grant Nos.11274287,11174001,and 11204313)the National Basic Research Program of China(Grant No.2012CB927402)
文摘The most important interface-related quantities determined by band alignment are the barrier heights for charge trans- port, given by the Fermi level position at the interface. Taking Pb（Zr, Ti）O3 （PZT） as a typical ferroelectric material and applying X-ray photoelectron spectroscopy （XPS）, we briefly review the interface formation and barrier heights at the inter- faces between PZT and electrodes made of various metals or conductive oxides. Polarization dependence of the Schottky barrier height at a ferroelectric/electrode interface is also directly observed using XPS.
基金supported by the National Natural Science of China(Grant Nos.61176091 and 50932001)
文摘A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.
文摘The GaP-based dilute nitride direct band gap material Ga（NAsP） is gaining importance due to the monolithic integra- tion of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga（NAsP）/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs on GaP substrates. We examine the effect of nitrogen （N） concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs with that of the GaNxAsyP1-x-y/Al2Ga1-2P QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and AI into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.
基金supported by the Fund from the Open Project Key Laboratory of Microelectronic Devices and Integrated Technology,China (Grant No. 202006)the Doctoral Research Support Foundation of Shenyang Ligong University,China (Grant No. 1010147000914)the Science and Technology Program of Ningbo,China (Grant No. 2019B10129)。
文摘Band alignment between NiO_(x) and nonpolar GaN plane and between NiO_(x) and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiO_(x)/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiO_(x) films. By fitting the Ga 3 d spectrum obtained from the NiO_(x)/GaN interface, we find that relatively high Ga–O content at the interface corresponds to a small band offset. On the one hand, the high Ga–O content on the GaN surface will change the growth mode of NiO_(x). On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001)。
文摘An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap of 4.85 e V.In addition,the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties.The GaO_(x)/diamond heterojunction shows a type-Ⅱstaggered band configuration,where the valence and conduction band offsets are 1.28 e V and 1.93 e V,respectively.These results confirm the feasibility of the use of n-GaO_(x)as a termination structure for diamond power devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.61774172)the Guangdong Provincial Department of Science and Technology,China(Grant Nos.2019B010132002 and 2016B090918106)+1 种基金the Pengcheng Scholar Funding(2018)Shenzhen Science and Technology Innovation Committee,China(Grant No.KQJSCX20180323174713505).
文摘Theε-Ga2O3 p-n heterojunctions(HJ)have been demonstrated using typical p-type oxide semiconductors(NiO or SnO).Theε-Ga2O3 thin film was heteroepitaxial grown by metal organic chemical vapor deposition(MOCVD)with three-step growth method.The polycrystalline SnO and NiO thin films were deposited on theε-Ga2O3 thin film by electron-beam evaporation and thermal oxidation,respectively.The valence band offsets(VBO)were determined by x-ray photoelectron spectroscopy(XPS)to be 2.17 eV at SnO/ε-Ga2O3 and 1.7 eV at NiO/ε-Ga2O3.Considering the bandgaps determined by ultraviolet-visible spectroscopy,the conduction band offsets(CBO)of 0.11 eV at SnO/ε-Ga2O3 and 0.44 eV at NiO/ε-Ga2O3 were obtained.The type-Ⅱband diagrams have been drawn for both p-n HJs.The results are useful to understand the electronic structures at theε-Ga2O3 p-n HJ interface,and design optoelectronic devices based onε-Ga2O3 with novel functionality and improved performance.
基金supported by the National Natural Science Foundation of China(Grant Nos.50702071 and 50772122)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51002176)
文摘A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy, The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.
基金supported by the National Natural Science Foundation of China(No.52472225)Guangdong Basic and Applied Basic Research Foundation(No.2025A1515012041)+1 种基金Shenzhen University 2035 Program for Excellent Research(No.2024B003)China and the Special Fund for the Cultivation of Independent Innovation Achievements of Postgraduate Students at Shenzhen University.
文摘The efficiency of Cu2ZnSnS4(CZTS)solar cells is limited due to interfacial band misalignment and severe non-radiative recombination.ZnSnO(ZTO)is a promising Cd-free buffer layer,offering a potential for favorable band alignment with CZTS absorber.Here,we demonstrate that optimizing the temperature-dependent deposition during reactive magnetron sputtering significantly promotes elemental interdiffusion.For the proposed CZTS/ZTO interface,a favorable“spike-like”band alignment is achieved,effectively enhancing the carrier transport efficiency and reducing the interfacial defect density.Furthermore,Zn diffusion mitigates CuZn(that is,copper atoms sit at sites normally occupied by zinc atoms)antisite defects,reducing the non-radiative recombination and improving the absorber quality.Finally,the champion device achieved the highest power conversion efficiency(PCE)of 10.90%by sputtering ZTO as buffer layer in CZTS solar cell so far,with a high open circuit voltage(VOC)of 740 mV and a fill factor(FF)of 61.79%.This strategy highlights the potential of sputtered ZTO as a scalable and eco-friendly buffer layer for Cd-free CZTS solar cells.
基金supported by the National Natural Science Foundation of China(Grant Nos.61974166 and 62274184)the Hunan Provincial Natural Science Foundation of China(Grant Nos.2021JJ20080 and 2021JJ20077)。
文摘Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement,thus is a promising method to form 2D/2D and 2D/3D heterojunction.Considering the unique optical properties of CsPbI_(3) and transition metal dichalcogenides(TMDCs),their heterostructure present potential applications in both photonics and optoelectronics fields.Here,we demonstrate selective growth of cubic phase CsPbI_(3) nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires(NWs)on monolayer WSe_(2).Furthermore,we show growth of CsPbI_(3) on both transferred WSe_(2) on copper grid and WSe_(2) based optoelectrical devices,providing a platform for structure analysis and device performance modification.Transmission electron microscopy(TEM)results reveal the epitaxial nature of cubic CsPbI_(3) phase.The revealed growth fundamental of CsPbI_(3) is universal valid for other twodimensional substrates,offering a great advantage to fabricate CsPbI_(3) based van der Waals heterostructures(vdWHs).X-ray photoelectron spectroscopy(XPS)and optical characterization confirm the type-II band alignment,resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower energy.The formation of WSe_(2)/CsPbI_(3) heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 nA.These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.
基金supported by the National Natural Science Foundation of China(62305064)the Research Start-up Fund for Young Teachers of Fuzhou University(602592)+1 种基金the Young and Middleaged Teacher Education Research Project of Fujian Province(JAT220011)the Fujian Science&Technology Innovation Laboratory Optoelectronic Information of China(Grant No.2021ZZ124).
文摘Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.
基金the National Key Research and Development Program of China(2016YFA0204000)the National Natural Science Foundation of China(61935016,U1632118 and 21571129)+3 种基金start-up funding from ShanghaiTech Universitythe Center for High-resolution Electron Microscopy(C?EM)at ShanghaiTech University(EM02161943)Young 1000 Talents ProgramScience Fund for Creative Research Groups(21421004)。
文摘Narrow-bandgap tin-lead(Sn-Pb)mixed perovskite solar cells(PSCs)play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit.A robust,chemically stable and lowtemperature-processed hole transporting layer(HTL)is essential for building high-efficiency Sn-Pb solar cells and perovskite tandem solar cells.Here,we explore a roomtemperature-processed NiOx(L-NiOx)HTL based on nanocrystals(NCs)for Sn-Pb PSCs.In comparison with hightemperature-annealed NiOx(H-NiOx)film,the L-NiOx film shows deeper valence band and lower trap density,which increases the built-in potential and reduces carrier recombination,leading to a power conversion efficiency of 18.77%,the record for NiOx-based narrow-bandgap PSCs.Furthermore,the device maintains about 96%of its original efficiency after 50 days.This work provides a robust and room-temperatureprocessed HTL for highly efficient and stable narrow-bandgap PSCs.
基金the National Natural Science Foundation of China under Grant Nos.11904085 and 12074103Program for Outstanding Youth of Henan Province under Grant No.202300410221Henan Normal University Innovative Science and Technology Team under Grant No.20200185.
文摘Constructing two-dimensional(2D)van der Waals heterostructures(vdWHs)can expand the electronic and optoelectronic applications of 2D semiconductors.However,the work on the 2D vdWHs with robust band alignment is still scarce.Here,we employ a global structure search approach to construct the vdWHs with monolayer MoSi_(2)N_(4)and widebandgap GeO_(2).The studies show that the GeO_(2)/MoSi_(2)N_(4)vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and typeII band alignment with GeO_(2)and MoSi_(2)N_(4)layers as the conduction band minimum(CBM)and valence band maximum(VBM),respectively.Also,the direct-to-indirect band gap transition can be achieved by applying biaxial strain.In particular,the 2D GeO_(2)/MoSi_(2)N_(4)vdWHs show a robust type-II band alignment under the effects of biaxial strain,interlayer distance and external electric field.The results provide a route to realize the robust type-II band alignment vdWHs,which is helpful for the implementation of optoelectronic nanodevices with stable characteristics.
基金supported by the State Key Research and Development Project of Guangdong,China(Grant No.2020B010174002)the National Natural Science Foundation of China(Grant Nos.U21A20503,and U21A2071)。
文摘Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.In this work,we report on the heteroepitaxial construction,band structure alignment and polarization engineering of the single-phasedκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with a valence band offset of(1.74±0.1)eV and a conduction band offset of(0.29■0.1)eV.Besides the band edge discontinuity,charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV,respectively,at theκ-Ga_(2)O_(3)surface andκ-Ga_(2)O_(3)/GaN interface.The polarization switching properties of ferroelectricκ-Ga_(2)O_(3)are identified with a remanent polarization of approximately 2.7μC/cm^(2)via the direct hysteresis remanent polarization/voltage(P-V)loop measurement.These findings allow the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunction for the application of power electronic devices,advanced memories and even ultra-low loss negative capacitance transistors.
