摘要
Theε-Ga2O3 p-n heterojunctions(HJ)have been demonstrated using typical p-type oxide semiconductors(NiO or SnO).Theε-Ga2O3 thin film was heteroepitaxial grown by metal organic chemical vapor deposition(MOCVD)with three-step growth method.The polycrystalline SnO and NiO thin films were deposited on theε-Ga2O3 thin film by electron-beam evaporation and thermal oxidation,respectively.The valence band offsets(VBO)were determined by x-ray photoelectron spectroscopy(XPS)to be 2.17 eV at SnO/ε-Ga2O3 and 1.7 eV at NiO/ε-Ga2O3.Considering the bandgaps determined by ultraviolet-visible spectroscopy,the conduction band offsets(CBO)of 0.11 eV at SnO/ε-Ga2O3 and 0.44 eV at NiO/ε-Ga2O3 were obtained.The type-Ⅱband diagrams have been drawn for both p-n HJs.The results are useful to understand the electronic structures at theε-Ga2O3 p-n HJ interface,and design optoelectronic devices based onε-Ga2O3 with novel functionality and improved performance.
作者
Chang Rao
Zeyuan Fei
Weiqu Chen
Zimin Chen
Xing Lu
Gang Wang
Xinzhong Wang
Jun Liang
Yanli Pei
饶畅;费泽元;陈伟驱;陈梓敏;卢星;王钢;王新中;梁军;裴艳丽(School of Electronics and Information Technology,State Key Laboratory of Optoelectronics Materials&Technologies,Sun Yat-Sen University,Guangzhou 510006,China;Department of Electronic Communication and Technology,Shenzhen Institute of Information Technology,Shenzhen 518172,China;School of Advance Materials,Peking University Shenzhen Graduated School,Shenzhen 518055,China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.61774172)
the Guangdong Provincial Department of Science and Technology,China(Grant Nos.2019B010132002 and 2016B090918106)
the Pengcheng Scholar Funding(2018)
Shenzhen Science and Technology Innovation Committee,China(Grant No.KQJSCX20180323174713505).
