The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the Univers...The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.展开更多
We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate(CMG)device.This is an industry standard model which has been used extensively for FinFETs IC design and simulation,and has now been ...We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate(CMG)device.This is an industry standard model which has been used extensively for FinFETs IC design and simulation,and has now been extended to accurately model gate-allaround FET(GAAFET).We present the core framework of BSIM-CMG and discuss the latest updates that capture various physical phenomena originating from the quantum confinement of electrons by the small cross section of the GAAFET channel.Special attention is paid to providing suitable model parameters that can be adjusted using software tools to match the model with manufactured transistors very accurately.Furthermore,the model’s speed allows the use of Monte Carlo circuit simulation to account for random device variations encountered in manufacturing.This model is the industry standard compact model for GAAFETs and will help bridge the wide divide between GAA IC manufacturing and design,starting at 3nm/2nm technologies.展开更多
基于p型衬底的DG SOI MOSFET器件,分析了PSP-SOI,BSIM-IMG和HiSIM-SOTB模型器件建模的可适用性。对3种模型的物理机理和数学方程进行研究,提取器件的直流特性及参数值。实验数据对比结果表明:相比PSP-SOI和HiSIM-SOTB,BSIM-IMG的仿真精...基于p型衬底的DG SOI MOSFET器件,分析了PSP-SOI,BSIM-IMG和HiSIM-SOTB模型器件建模的可适用性。对3种模型的物理机理和数学方程进行研究,提取器件的直流特性及参数值。实验数据对比结果表明:相比PSP-SOI和HiSIM-SOTB,BSIM-IMG的仿真精度分别提高了2.08%和7.10%。所以,BSIM-IMG更适用于DG SOI MOSFET器件直流特性建模。展开更多
文摘The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.
文摘We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate(CMG)device.This is an industry standard model which has been used extensively for FinFETs IC design and simulation,and has now been extended to accurately model gate-allaround FET(GAAFET).We present the core framework of BSIM-CMG and discuss the latest updates that capture various physical phenomena originating from the quantum confinement of electrons by the small cross section of the GAAFET channel.Special attention is paid to providing suitable model parameters that can be adjusted using software tools to match the model with manufactured transistors very accurately.Furthermore,the model’s speed allows the use of Monte Carlo circuit simulation to account for random device variations encountered in manufacturing.This model is the industry standard compact model for GAAFETs and will help bridge the wide divide between GAA IC manufacturing and design,starting at 3nm/2nm technologies.
文摘基于p型衬底的DG SOI MOSFET器件,分析了PSP-SOI,BSIM-IMG和HiSIM-SOTB模型器件建模的可适用性。对3种模型的物理机理和数学方程进行研究,提取器件的直流特性及参数值。实验数据对比结果表明:相比PSP-SOI和HiSIM-SOTB,BSIM-IMG的仿真精度分别提高了2.08%和7.10%。所以,BSIM-IMG更适用于DG SOI MOSFET器件直流特性建模。
