Owing to the low p-type doping efficiency in the hole injection layers(HILs)of GaN-based ultra-violet(UV)vertical-cavity surface-emitting laser(VCSEL),effective hole injection in multi-quantum wells(MQW)is not achieve...Owing to the low p-type doping efficiency in the hole injection layers(HILs)of GaN-based ultra-violet(UV)vertical-cavity surface-emitting laser(VCSEL),effective hole injection in multi-quantum wells(MQW)is not achieved,significantly limiting the photoelectric performance of UV VCSELs.We developed a slope-shaped HIL and an EBL structure in AlGaN-based UV VCSELs.In this study,by improving hole in-jection efficiency,the hole concentration in the HIL is increased,and the hole barrier at the electron barrier layer(EBL)/HIL interface is decreased.This minimises the hindering effect of hole injection.A mathematic-al model of this structure was established using a commercial software,photonic integrated circuit simulator in three-dimension(PICS3D).We conducted simulations and theoretical analyses of the band structure and carrier concentration.Introducing polarisation doping through the Al composition gradient in the HIL en-hanced the hole concentration,thereby improving the hole injection efficiency.Furthermore,modifying the EBL eliminated the abrupt potential barrier for holes at the HIL/EBL interface,smoothing the valence band.This improved the stimulated radiative recombination rate in the MQW,increasing the laser power.There-fore,the sloped p-type layer can enhance the optoelectronic performance of UV VCSELs.展开更多
This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind ultraviolet(UV)photodetectors.Based on the photodetectors,a low-noise,high-gain UV detection system ci...This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind ultraviolet(UV)photodetectors.Based on the photodetectors,a low-noise,high-gain UV detection system circuit is designed and fabricated,enabling the detection,acquisition,and calibration of weak solar-blind UV signals.Experimental results demonstrate that under zero bias conditions,with a UV light power density of 3.45μW/cm^(2) at 260 nm,the sample achieves a peak responsivity(R)of 0.085 A·W^(−1),an external quantum efficiency(EQE)of 40.7%,and a detectivity(D^(*))of 7.46×10^(12) cm·Hz^(1/2)·W^(−1).The system exhibits a bandpass characteristic within the 240–280 nm wavelength range,coupled with a high signal-to-noise ratio(SNR)of 39.74 dB.展开更多
The novel structure of the AlGaN/GaN high electron mobility transistor(HEMT)with a groove double field-plate is proposed in this paper,which resolves the issue of the current collapse caused by the high electric field...The novel structure of the AlGaN/GaN high electron mobility transistor(HEMT)with a groove double field-plate is proposed in this paper,which resolves the issue of the current collapse caused by the high electric field at the gate edge of conventional AlGaN/GaN HEMT.The current transport mechanism of the novel device and its effectiveness to suppress current collapse are studied.Based on the introduction of the groove dual-field plate,the depletion region of the novel device is extended.The electric field peak at the gate edge is reduced and the distribution of the electric field is more uniform.As a result,the new structure can improve the current collapse without significantly reducing the drain current.Compared with the conventional AlGaN/GaN HEMT,the suppression effect of the new device on the current collapse effect is increased by 94.1%when L_(fp1)=0.3μm and L_(fp2)=0.7μm.展开更多
Research on p-channel field-effect transistors(p-FETs)remains limited,primarily due to the significantly lower conductivity of the two-dimensional hole gas(2DHG)compared to the two-dimensional electron gas(2DEG)in n-c...Research on p-channel field-effect transistors(p-FETs)remains limited,primarily due to the significantly lower conductivity of the two-dimensional hole gas(2DHG)compared to the two-dimensional electron gas(2DEG)in n-channel field-effect transistors(n-FETs),which poses a significant challenge for monolithic integration.In this study,we investigate the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures through semiconductor technology computer-aided design(TCAD)simulations and theoretical calculations,identifying the conditions necessary to achieve high-density 2DHG.Our simulations demonstrate that increasing the p-Ga N thickness leads to two critical thicknesses determined by surface states and acceptor ionization concentration:one corresponds to the onset of 2DHG formation,and the other to its saturation.Lowering the donor surface state energy level and increasing the acceptor ionization concentration promote 2DHG formation and saturation,although the saturated density remains independent of surface states.Additionally,a higher Al composition enhances intrinsic ionization due to stronger polarization effects,thereby increasing the 2DHG sheet density.Consequently,to achieve high-density 2DHG in p-Ga N/Al Ga N/Ga N heterostructures,it is essential to increase the Al composition,ensure that the p-Ga N thickness exceeds the critical thickness for 2DHG saturation,and maximize the acceptor ionization concentration.This study elucidates the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures and provides valuable guidance for the optimization of p-FET designs.展开更多
Polarization-induced two-dimensional hole gases(2DHG)in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors.This work investigates the impact of p-GaN thickness on hole distrib...Polarization-induced two-dimensional hole gases(2DHG)in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors.This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD simulations.It is demonstrated that the p-channel is composed of holes both in the p-GaN layer and in the 2DHG at the GaN/AlGaN heterointerface at 300 K,whereas at 77 K,the p-channel conduction is dominated solely by the 2DHG at the GaN/AlGaN heterointerface.The results also reveal the formation of a polarization-induced 2DHG at the GaN/AlGaN interface,exhibiting a high sheet density of 2.2×10^(13)cm^(-2)and a mobility of 16.2 cm^(2)·V^(-1)·s^(-1)at 300 K.The 2DHG sheet density remains nearly independent of p-GaN thickness when the p-GaN layer exceeds 30 nm.However,for p-GaN layers thinner than 30 nm,the 2DHG sheet density strongly depends on the p-GaN thickness,which is attributed to the gradual extension of the depletion region toward the GaN/AlGaN interface under the influence of surface trap states.展开更多
In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer prov...In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).展开更多
文摘Owing to the low p-type doping efficiency in the hole injection layers(HILs)of GaN-based ultra-violet(UV)vertical-cavity surface-emitting laser(VCSEL),effective hole injection in multi-quantum wells(MQW)is not achieved,significantly limiting the photoelectric performance of UV VCSELs.We developed a slope-shaped HIL and an EBL structure in AlGaN-based UV VCSELs.In this study,by improving hole in-jection efficiency,the hole concentration in the HIL is increased,and the hole barrier at the electron barrier layer(EBL)/HIL interface is decreased.This minimises the hindering effect of hole injection.A mathematic-al model of this structure was established using a commercial software,photonic integrated circuit simulator in three-dimension(PICS3D).We conducted simulations and theoretical analyses of the band structure and carrier concentration.Introducing polarisation doping through the Al composition gradient in the HIL en-hanced the hole concentration,thereby improving the hole injection efficiency.Furthermore,modifying the EBL eliminated the abrupt potential barrier for holes at the HIL/EBL interface,smoothing the valence band.This improved the stimulated radiative recombination rate in the MQW,increasing the laser power.There-fore,the sloped p-type layer can enhance the optoelectronic performance of UV VCSELs.
基金supported by the Director’s Fund for the‘Climbing Plan’of the National Space Science Centre of the Chinese Academy of Sciences(No.E2PD10011S)the National Engineering Research Centre for Mobile Private Networks Project(No.BJTU20221102).
文摘This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind ultraviolet(UV)photodetectors.Based on the photodetectors,a low-noise,high-gain UV detection system circuit is designed and fabricated,enabling the detection,acquisition,and calibration of weak solar-blind UV signals.Experimental results demonstrate that under zero bias conditions,with a UV light power density of 3.45μW/cm^(2) at 260 nm,the sample achieves a peak responsivity(R)of 0.085 A·W^(−1),an external quantum efficiency(EQE)of 40.7%,and a detectivity(D^(*))of 7.46×10^(12) cm·Hz^(1/2)·W^(−1).The system exhibits a bandpass characteristic within the 240–280 nm wavelength range,coupled with a high signal-to-noise ratio(SNR)of 39.74 dB.
基金supported by the Key Research and Development Program of Shannxi under Grant 2022GY-016the National Natural Science Foundation of China under Grant 52377197.
文摘The novel structure of the AlGaN/GaN high electron mobility transistor(HEMT)with a groove double field-plate is proposed in this paper,which resolves the issue of the current collapse caused by the high electric field at the gate edge of conventional AlGaN/GaN HEMT.The current transport mechanism of the novel device and its effectiveness to suppress current collapse are studied.Based on the introduction of the groove dual-field plate,the depletion region of the novel device is extended.The electric field peak at the gate edge is reduced and the distribution of the electric field is more uniform.As a result,the new structure can improve the current collapse without significantly reducing the drain current.Compared with the conventional AlGaN/GaN HEMT,the suppression effect of the new device on the current collapse effect is increased by 94.1%when L_(fp1)=0.3μm and L_(fp2)=0.7μm.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3604203)the Key Research and Development Program of Guangdong Province,China(Grant No.2024B0101060002)the Key Research and Development Program of Shenzhen City,China(Grant No.JCYJ20241202130036043)。
文摘Research on p-channel field-effect transistors(p-FETs)remains limited,primarily due to the significantly lower conductivity of the two-dimensional hole gas(2DHG)compared to the two-dimensional electron gas(2DEG)in n-channel field-effect transistors(n-FETs),which poses a significant challenge for monolithic integration.In this study,we investigate the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures through semiconductor technology computer-aided design(TCAD)simulations and theoretical calculations,identifying the conditions necessary to achieve high-density 2DHG.Our simulations demonstrate that increasing the p-Ga N thickness leads to two critical thicknesses determined by surface states and acceptor ionization concentration:one corresponds to the onset of 2DHG formation,and the other to its saturation.Lowering the donor surface state energy level and increasing the acceptor ionization concentration promote 2DHG formation and saturation,although the saturated density remains independent of surface states.Additionally,a higher Al composition enhances intrinsic ionization due to stronger polarization effects,thereby increasing the 2DHG sheet density.Consequently,to achieve high-density 2DHG in p-Ga N/Al Ga N/Ga N heterostructures,it is essential to increase the Al composition,ensure that the p-Ga N thickness exceeds the critical thickness for 2DHG saturation,and maximize the acceptor ionization concentration.This study elucidates the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures and provides valuable guidance for the optimization of p-FET designs.
基金supported by the National Key Research and Development Program of China(Grant No.2024YFE0205000)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20243037)+2 种基金the National Natural Science Foundation of China(Grant Nos.62074077 and 61921005)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231098)the Collab-orative Innovation Center of Solid State Lighting and Energy-Saving Electronics.
文摘Polarization-induced two-dimensional hole gases(2DHG)in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors.This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD simulations.It is demonstrated that the p-channel is composed of holes both in the p-GaN layer and in the 2DHG at the GaN/AlGaN heterointerface at 300 K,whereas at 77 K,the p-channel conduction is dominated solely by the 2DHG at the GaN/AlGaN heterointerface.The results also reveal the formation of a polarization-induced 2DHG at the GaN/AlGaN interface,exhibiting a high sheet density of 2.2×10^(13)cm^(-2)and a mobility of 16.2 cm^(2)·V^(-1)·s^(-1)at 300 K.The 2DHG sheet density remains nearly independent of p-GaN thickness when the p-GaN layer exceeds 30 nm.However,for p-GaN layers thinner than 30 nm,the 2DHG sheet density strongly depends on the p-GaN thickness,which is attributed to the gradual extension of the depletion region toward the GaN/AlGaN interface under the influence of surface trap states.
基金supported by National Natural Science Foundation of China under grant U23A20361Key Area R&D Program of Guangdong Province under grant 2022B0701180001.
文摘In this work,we design and fabricate AlGaN/GaN-based Schottky barrier diodes(SBDs)on a silicon substrate with a trenched n^(+)-GaN cap layer.With the developed physical models,we find that the n^(+)-GaN cap layer provides more electrons into the AlGaN/GaN channel,which is further confirmed experimentally.When compared with the reference device,this increases the two-dimensional electron gas(2DEG)density by two times and leads to a reduced specific ON-resistance(Ron,sp)of~2.4 mΩ·cm^(2).We also adopt the trenched n^(+)-GaN structure such that partial of the n^(+)-GaN is removed by using dry etching process to eliminate the surface electrical conduction when the device is set in the off-state.To suppress the surface defects that are caused by the dry etching process,we also deposit Si_(3)N_(4)layer prior to the deposition of field plate(FP),and we obtain a reduced leakage current of~8×10^(−5)A·cm^(−2)and breakdown voltage(BV)of 876 V.The Baliga’s figure of merit(BFOM)for the proposed structure is increased to~319 MW·cm^(−2).Our investigations also find that the pre-deposited Si_(3)N_(4)layer helps suppress the electron capture and transport processes,which enables the reduced dynamic R_(on,sp).
