摘要
为提升AlGaN基深紫外发光二极管(deep ultraviolet light-emitting diodes,DUV-LEDs)的内量子效率(internal quantum efficiency,IQE),研究采用半导体器件模拟仿真与理论计算相结合的方法,通过探究量子阱周期数与厚度确定了最佳参数。结果表明随着量子阱周期数和厚度的增加,DUV-LEDs的光输出功率(light output power,LOP)、内量子效率(IQE)和功率谱密度(power spectral density,PSD)均呈先上升后下降的趋势,同时泄漏电流减小,可靠性提升。当量子阱周期数为5(厚度为2 nm)时,DUV-LEDs的IQE、LOP和PSD均达到了最大值。在此基础上,针对LED器件效率下降现象、电子泄露严重和载流子注入效率低等问题,设计了传统LED、超晶格LQB LED和Al组分梯度超晶格LQB LED这3种结构。结果表明Al组分梯度超晶格LQB LED相比于传统结构,可提升导带电子有效势垒高度23.9%、降低价带空穴有效势垒高度27.8%,使PSD提升38%、LOP提升6%、效率下降改善21%,缓解了电子泄漏并增加空穴注入,增强辐射复合,从而进一步提升了内量子效率,实现了量子阱与梯度超晶格LQB协同优化的目标。
In order to improve the internal quantum efficiency(IQE)of AlGaN-based deep ultraviolet light-emitting diodes(DUV-LEDs),the study used a method that combined semiconductor device simulation and theoretical calculation,and determined the optimal parameters by exploring the number of quantum well periods and thickness.The results show that with the increase of quantum well period and thickness,the light output power(LOP),internal quantum efficiency(IQE)and power spectral density(PSD)of DUV-LEDs all show a trend of first increasing and then decreasing,while the leakage current decreases and the reliability improves.When the number of quantum well periods is 5(with a thickness of 2 nm),the IQE,LOP and PSD of DUV-LEDs all reach the maximum value.On this basis,in order to solve the problems of LED device efficiency decline,serious electron leakage and low carrier injection efficiency,three structures are designed:traditional LED,superlattice LQB LED and Al component gradient superlattice LQB LED.The results show that compared with the traditional structure,the Al component gradient superlattice LQB LED can increase the effective barrier height of conduction band electrons by 23.9%,reduce the effective barrier height of valence band holes by 27.8%,increase PSD by 38%,increase LOP by 6%,and improve efficiency decline by 21%.It alleviates electron leakage,increases hole injection,enhances radiative recombination,and further improves the internal quantum efficiency,thus achieving the goal of coordinated optimization of quantum wells and gradient superlattice LQB.
作者
王攀
丁玉龙
季月
马占红
WANG Pan;DING Yulong;JI Yue;MA Zhanhong(School of Electronic and Electrical Engineering,Ningxia University,Yinchuan,Ningxia 750021,China)
出处
《河北工业大学学报》
2025年第6期7-17,共11页
Journal of Hebei University of Technology
基金
中央引导地方科技发展资金资助项目(2024FRD05005)
宁夏自然科学基金资助项目(2024AAC05019)。
关键词
AlGaN基深紫外LED
内量子效率
量子阱
梯度超晶格LQB
协同优化
AlGaN-based deep ultraviolet LED
internal quantum efficiency
quantum well
gradient superlattice LQB
collaborative optimization
