用蒸镀法制备了SiO2 Ag SiO2 复合膜 ,探讨了水浸腐蚀和薄膜厚度对该复合膜光学特性的影响。试验结果表明 :适当增加复合膜中SiO2 膜层的厚度不但可以提高SiO2 Ag SiO2 复合膜可见光的透光率 ,而且可以相对有效地防止复合膜进一步被氧...用蒸镀法制备了SiO2 Ag SiO2 复合膜 ,探讨了水浸腐蚀和薄膜厚度对该复合膜光学特性的影响。试验结果表明 :适当增加复合膜中SiO2 膜层的厚度不但可以提高SiO2 Ag SiO2 复合膜可见光的透光率 ,而且可以相对有效地防止复合膜进一步被氧化 ,提高SiO2 Ag SiO2展开更多
为了研究膜-基界面对薄膜中晶粒生长以及性能的影响,采用改进嵌入原子法(Modified Embedded Atom Method,MEAM)计算了(001)Ag/(001)Si、(011)Ag/(001)Si、(111)Ag/(001)Si扭转界面的界面能,结果表明:界面能按照(111)Ag/(001)Si,(001)Ag/...为了研究膜-基界面对薄膜中晶粒生长以及性能的影响,采用改进嵌入原子法(Modified Embedded Atom Method,MEAM)计算了(001)Ag/(001)Si、(011)Ag/(001)Si、(111)Ag/(001)Si扭转界面的界面能,结果表明:界面能按照(111)Ag/(001)Si,(001)Ag/(001)Si,(011)Ag/(001)Si的顺序依次增加;从界面能的最小化考虑,Ag的(111)面为择优晶面,择优扭转角为θ为8.16°.展开更多
Thein situ low angle X-ray diffraction and transmission electron microscopy were used to monitor the interdiffusion characteristics as well as the microstructure in Ag/Si multilayers with modulated wavelength 7. 64 nm...Thein situ low angle X-ray diffraction and transmission electron microscopy were used to monitor the interdiffusion characteristics as well as the microstructure in Ag/Si multilayers with modulated wavelength 7. 64 nm when annealing from 323 to 573 K. The interdiffusion mechanism of Ag/Si multilayers with immiscibility is different from that of other metal/Si multilayers which are miscible. Phase separation takes place at 323 K, then silicon atoms diffuse into silver sublayers through silver grain boundaries and separate silver sublayers into nanometer sized silver particles gradually at higher temperature. The mean size of silver particles is about 5 nm. The activation energy and frequency factor are determined to be 0.24 eV and 2.02 x?20m2/s, respectively.展开更多
文摘为了研究膜-基界面对薄膜中晶粒生长以及性能的影响,采用改进嵌入原子法(Modified Embedded Atom Method,MEAM)计算了(001)Ag/(001)Si、(011)Ag/(001)Si、(111)Ag/(001)Si扭转界面的界面能,结果表明:界面能按照(111)Ag/(001)Si,(001)Ag/(001)Si,(011)Ag/(001)Si的顺序依次增加;从界面能的最小化考虑,Ag的(111)面为择优晶面,择优扭转角为θ为8.16°.
文摘Thein situ low angle X-ray diffraction and transmission electron microscopy were used to monitor the interdiffusion characteristics as well as the microstructure in Ag/Si multilayers with modulated wavelength 7. 64 nm when annealing from 323 to 573 K. The interdiffusion mechanism of Ag/Si multilayers with immiscibility is different from that of other metal/Si multilayers which are miscible. Phase separation takes place at 323 K, then silicon atoms diffuse into silver sublayers through silver grain boundaries and separate silver sublayers into nanometer sized silver particles gradually at higher temperature. The mean size of silver particles is about 5 nm. The activation energy and frequency factor are determined to be 0.24 eV and 2.02 x?20m2/s, respectively.
