利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频...利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%展开更多
We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit process...We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology. A test structure of the photodetector with a mesa size of 300μm × 300μm is also made in order to obtain the device parameters. The measured dark current density at 77K is 1.5 × 10^-3A/cm^2 with a bias voltage of 2V. The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm. The blackbody detectivity is shown to be 3.95 × 10^8 （cm · Hz^1/2）/W. The final FPA is flip-chip bonded on a CMOS read-out integrated circuit. The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.展开更多
本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系 ,推导了热应力作用下双层膜发生弯曲的理论公式 ,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向 ,分析了 Ga As光电阴极 Al Ga As/ Ga As外...本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系 ,推导了热应力作用下双层膜发生弯曲的理论公式 ,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向 ,分析了 Ga As光电阴极 Al Ga As/ Ga As外延层的实测倒易点二维图 ,最后提出了降低 Al Ga As/ Ga展开更多
An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents ...An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.展开更多
文摘利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%
文摘We design and fabricate a 128 × 128 AlGaAs/GaAs quantum well infrared photodetector focal plane array （FPA）. The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology. A test structure of the photodetector with a mesa size of 300μm × 300μm is also made in order to obtain the device parameters. The measured dark current density at 77K is 1.5 × 10^-3A/cm^2 with a bias voltage of 2V. The peak of the responsivity spectrum is at 8.4μm,with a cutoff wavelength of 9μm. The blackbody detectivity is shown to be 3.95 × 10^8 （cm · Hz^1/2）/W. The final FPA is flip-chip bonded on a CMOS read-out integrated circuit. The infrared thermal images of some targets at room temperature background are successfully demonstrated at 80K operating temperature with a ratio of dead pixels of less than 1%.
文摘介绍了 AlGaAs/GaAs 多量子阱红外探测器(QWIP)暗电流与噪声的关系和降低暗电流的途径;基手湿法化学腐蚀工艺制作了300μm×300μm台面单元器件,并用变温液氦杜瓦测试系统在不同温度下对红外探测器暗电流进行了测试并分析。在温度小于40 K 时,随着温度的改变暗电流没有明显的变化;当温度大于40 K 时,暗电流随着温度的升高迅速变大,正、负偏压下 QWIP 暗电流具有不对称特性。
文摘本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系 ,推导了热应力作用下双层膜发生弯曲的理论公式 ,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向 ,分析了 Ga As光电阴极 Al Ga As/ Ga As外延层的实测倒易点二维图 ,最后提出了降低 Al Ga As/ Ga
文摘An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
