A newly grown Ba Ga4Se7 crystal has been synthesized via the Bridgman-Stockbarger technique.This new crystal has advantages of high nonlinear optics（NLO） coefficients,high laser damage thresholds,and wide transparen...A newly grown Ba Ga4Se7 crystal has been synthesized via the Bridgman-Stockbarger technique.This new crystal has advantages of high nonlinear optics（NLO） coefficients,high laser damage thresholds,and wide transparent regions.The Ba Ga4Se7 crystal has bright application prospects as a nonlinear gain medium in mid-infrared and terahertz regions.In this paper,the crystalline structure and synthetic method of the Ba Ga4Se7 crystal are introduced.The refractive indices and absorption coefficients along three dielectric axes between 0.1 THz and 1.0 THz are also obtained.The terahertz difference frequency generation（THz-DFG） characteristics based on the BaG a4Se7 crystal in the frequency range of 0.1 THz to 1.0 THz are analyzed theoretically and the phase-matching conditions are calculated.The application of Ba Ga4Se7 crystals in terahertz wave generation is also discussed.展开更多
Thermoelectric （TE） materials can convert directly low-grade heat energy to electricity, and vice versa, which is highly expected to play an important role in the future energy management. The application practice d...Thermoelectric （TE） materials can convert directly low-grade heat energy to electricity, and vice versa, which is highly expected to play an important role in the future energy management. The application practice demands efficient TE materials made of non-toxic and inexpensive components. Herein, we report a Ni substituted polycrystalline n-type bulk material In4.xNixSe3 （x = 0-0.1）. Based on density functional theory calculation, Ni tends to substitute at the In3 site in the In4Se3, which causes a monotonous unit cell volume reduction. At x=0.01, Ni substitution results in a sharp decrease in the carder concentration （he） in comparison with that of pure In4Se3, and then ne increases with the increase of Ni concentration. Ni substitution leads to a performance enhancement from 0.6 for pure In4Se3 to an optimum ZTvalue of 0.8 at 450℃.展开更多
In_4Se_3-based materials are noticeable n-type thermoelectric materials because of lead-free and intrinsically low lattice thermal conductivity,but the In4Se_3-δ crystals（with Se-deficiency,δ） suffer strong anisot...In_4Se_3-based materials are noticeable n-type thermoelectric materials because of lead-free and intrinsically low lattice thermal conductivity,but the In4Se_3-δ crystals（with Se-deficiency,δ） suffer strong anisotropy and cleavage habit. Thus the researches on polycrystalline In_4Se_3-based materials are of great importance. Herein,we experimentally and theoretically investigated the thermoelectric properties of In_（4-x）Se_（2.95）Ag_x polycrystalline compounds. Ag occupying the intercalation or In4 site is energetically most favorable in light of the density functional theory calculation. The maximum solubility of Ag（x_m） is very low（xm 〈 0.03） and the experimental result indicates that the electrical transport behavior of In_（4-x）Se_（2.95）Ag_x compounds is not significantly optimized by Ag-dopant. Consequently,a maximum ZT of 0.92 at 723 K is obtained by In_（3.98）Se_（2.95）Ag_（0.02） compound that represents 15% enhancement over that of the un-doped one which benefits from the slightly enhanced power factor and the reduced total thermal conductivity.展开更多
Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface...Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)_(2))and VSndefects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(Cu_(Sn)defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the V_(OC) deficit(V_(OC,def))is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01%power conversion efficiency(PCE)has been obtained.The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.展开更多
基金supported by the National Basic Research Program of China(973)under Grant No.2015CB755403 and No.2014CB339802National High Technology Research and Development Program(863)under Grant No.2011AA010205+6 种基金National Natural Science Foundation of China under Grant No.61107086No.61172010and No.61471257Natural Science Foundation of Tianjin under Grant No.14JCQNJC02200Science and Technology Support Program of Tianjin under Grant No.14ZCZDGX00030Specialized Research Fund for the Doctoral Program of Higher Education under Grant No.20120032110053CAEP THz Science and Technology Foundation under Grant No.CAEPTHZ201304
文摘A newly grown Ba Ga4Se7 crystal has been synthesized via the Bridgman-Stockbarger technique.This new crystal has advantages of high nonlinear optics（NLO） coefficients,high laser damage thresholds,and wide transparent regions.The Ba Ga4Se7 crystal has bright application prospects as a nonlinear gain medium in mid-infrared and terahertz regions.In this paper,the crystalline structure and synthetic method of the Ba Ga4Se7 crystal are introduced.The refractive indices and absorption coefficients along three dielectric axes between 0.1 THz and 1.0 THz are also obtained.The terahertz difference frequency generation（THz-DFG） characteristics based on the BaG a4Se7 crystal in the frequency range of 0.1 THz to 1.0 THz are analyzed theoretically and the phase-matching conditions are calculated.The application of Ba Ga4Se7 crystals in terahertz wave generation is also discussed.
基金supported by National Natural Science Foundation of China(21233009,21225104,91422303,21171168 and 21301175)
文摘Thermoelectric （TE） materials can convert directly low-grade heat energy to electricity, and vice versa, which is highly expected to play an important role in the future energy management. The application practice demands efficient TE materials made of non-toxic and inexpensive components. Herein, we report a Ni substituted polycrystalline n-type bulk material In4.xNixSe3 （x = 0-0.1）. Based on density functional theory calculation, Ni tends to substitute at the In3 site in the In4Se3, which causes a monotonous unit cell volume reduction. At x=0.01, Ni substitution results in a sharp decrease in the carder concentration （he） in comparison with that of pure In4Se3, and then ne increases with the increase of Ni concentration. Ni substitution leads to a performance enhancement from 0.6 for pure In4Se3 to an optimum ZTvalue of 0.8 at 450℃.
基金supported by the National Natural Science Foundation of China(91422303,21225104,21571020,21233009,and 21301175)
文摘In_4Se_3-based materials are noticeable n-type thermoelectric materials because of lead-free and intrinsically low lattice thermal conductivity,but the In4Se_3-δ crystals（with Se-deficiency,δ） suffer strong anisotropy and cleavage habit. Thus the researches on polycrystalline In_4Se_3-based materials are of great importance. Herein,we experimentally and theoretically investigated the thermoelectric properties of In_（4-x）Se_（2.95）Ag_x polycrystalline compounds. Ag occupying the intercalation or In4 site is energetically most favorable in light of the density functional theory calculation. The maximum solubility of Ag（x_m） is very low（xm 〈 0.03） and the experimental result indicates that the electrical transport behavior of In_（4-x）Se_（2.95）Ag_x compounds is not significantly optimized by Ag-dopant. Consequently,a maximum ZT of 0.92 at 723 K is obtained by In_（3.98）Se_（2.95）Ag_（0.02） compound that represents 15% enhancement over that of the un-doped one which benefits from the slightly enhanced power factor and the reduced total thermal conductivity.
基金supported by the National Natural Science Foundation of China(62074037)the Science and Technology Department of Fujian Province(2020I0006)the Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ124)。
文摘Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)_(2))and VSndefects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(Cu_(Sn)defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the V_(OC) deficit(V_(OC,def))is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01%power conversion efficiency(PCE)has been obtained.The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.
