Sensor noise is a critical factor that degrades the performance of image processing systems.In traditional computing systems,noise correction is implemented in the digital domain,resulting in redundant latency and pow...Sensor noise is a critical factor that degrades the performance of image processing systems.In traditional computing systems,noise correction is implemented in the digital domain,resulting in redundant latency and power consumption overhead in the analog-to-digital conversion.In this work,we propose an analog-domain image correction architecture based on a proposed small-scale UNet,which implements a compact noise correction network within a one-transistor-one-memristor(1T1R)array.The statistical non-idealities of the fabricated 1T1R array(e.g.,device variability)are rigorously incorporated into the network's training and inference simulations.This correction network architecture leverages memristors for conducting multiply-accumulate operations aimed at rectifying non-uniform noise,defective pixels(stuck-at-bright/dark),and exposure mismatch.Compared to systems without correction,the proposed architecture achieves up to 50.13%improvement in recognition accuracy while demonstrating robust tolerance to memristor device-level errors.The proposed system achieves a 2.13-fold latency reduction and three orders of magnitude higher energy efficiency compared to conventional architecture.This work establishes a new paradigm for advancing the development of low-power,low-latency,and high-precision image processing systems.展开更多
The Macao Science Satellite-1(known as MSS-1)is the first scientific exploration satellite that was designed to measure the Earth's low latitude magnetic field at high resolution and with high precision by collect...The Macao Science Satellite-1(known as MSS-1)is the first scientific exploration satellite that was designed to measure the Earth's low latitude magnetic field at high resolution and with high precision by collecting data in a near-equatorial orbit.Magnetic field data from MSS-1's onboard Vector Fluxgate Magnetometer(VFM),collected at a sample rate of 50 Hz,allows us to detect and investigate sources of magnetic data contamination,from DC to relevant Nyquist frequency.Here we report two types of artificial disturbances in the VFM data.One is V-shaped events concentrated at night,with frequencies sweeping from the Nyquist frequency down to zero and back up.The other is 5-Hz events(ones that exhibit a distinct 5 Hz spectrum peak);these events are always accompanied by intervals of spiky signals,and are clearly related to the attitude control of the satellite.Our analyses show that VFM noise levels in daytime are systematically lower than in nighttime.The daily average noise levels exhibit a period of about 52 days.The V-shaped events are strongly correlated with higher VFM noise levels.展开更多
The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. Th...The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied. Experimental results agree well with the developed model.展开更多
Objectives:The eukaryotic initiation factor 4F(eIF4F)translation initiation complex inhibitors(eIF4Fi)were recently found to hyperactivate extracellular signal-regulated kinases 1/2(ERK1/2)signals,which contribute to ...Objectives:The eukaryotic initiation factor 4F(eIF4F)translation initiation complex inhibitors(eIF4Fi)were recently found to hyperactivate extracellular signal-regulated kinases 1/2(ERK1/2)signals,which contribute to acquired resistance to BRAF(B-Raf proto-oncogene,serine/threonine kinase)inhibitors in melanoma.This present study aims to elucidate how to overcome the resistance of the eIF4Fi in BRAFV600E mutant melanoma cells and explore the underlying mechanisms.Methods:Melanoma A375(vemurafenib[VEM]-sensitive)and A375R(VEM-resistant)cells were exposed to eIF4Fi RocA at varying doses and durations in vitro.We investigated the impact of RocA on the activity of ERK1/2,AKT serine/threonine kinase 1(AKT1),eIF4E,and enhancer of zeste homolog 2(EZH2).We then examined the impact of RocA on pro-apoptotic BH3-only proteins and proliferative proteins.We subsequently determined the effect of combined eIF4Fi,AKT1 inhibitor,EZH2 inhibitor or VEM on tumor growth in vitro and in vivo.Results:RocA inhibited proliferation and induced apoptosis in A375 cells,but inhibited proliferation in A375R cells.RocA rapidly reactivated ERK1/2 at 3 h and returned to baseline levels at 48 h.However,eIF4E and AKT1 activation began at 12 h and peaked at 48 h.ERK1/2 positively regulated EZH2 and EZH2-dependent expression of c-Fos and EGR1,while AKT1 negatively regulated c-Myc,c-Jun,and BMF,but positively regulated eIF4E.RocA downregulated ERK1/2(or EZH2,AKT1,and eIF4E)independent bcl-2 and Mcl-1 expression.AKT1i enhanced RocA-induced cell apoptosis,while EZH2i reduced RocA-induced cell proliferation.Combined CR-1-31-B,EZH2i,and AKT1i effectively overcame resistance to RocA and VEM resistance both in vitro and in vivo.Conclusion:The eIF4F complex inhibitor reactivates ERK1/2-EZH2 and AKT1 signaling pathways,resulting in resistance to both eIF4Fi and VEM.Combined administration of an eIF4Fi with EZH2 and AKT1 inhibitors effectively enhances sensitivity to both eIF4F complex and BRAF inhibitors.展开更多
It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the em...It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of surface recombination current, a 1/f noise model is developed. This model suggests that 1/f noise degradations are the result of the accumulation of oxide-trapped charges and interface states. Combining models of ELDRS, this model can explain the reason why the 1/f noise degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 700 Gy（Si）. The low dose rate was 0.001 Gy（Si）/s and the high dose rate was 0.1 Gy（Si）/s. The model accords well with the experimental results.展开更多
In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuati...In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas （2DEG） channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.展开更多
The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 n...The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 nm respectively)is characterized under PBTI stress from 0 s to 104 s.The 1/f noise features are analyzed by using the unified physical model taking into account the contributions from the carrier number and channel mobility fluctuations.The I d-V g,I d-V d,I g-V g tests are conducted to support and verify the physical analysis in the PBTI process.It is found that the influence of the channel mobility fluctuations may not be neglected.Due to the mobility degradation in a short-channel device,the noise level of the short channel device also degrades.Trapping and trap generation regimes of PBTI occur in high-k layer and are identified based on the results obtained for the gate leakage current and 1/f noise.展开更多
The 1/f noise in multiwalled carbon nanotubes bundles has been investigated between the frequency range of 0.1 to 30 Hz. At room temperature the noise spectrum is standard 1/f, and its level is proportional to the squ...The 1/f noise in multiwalled carbon nanotubes bundles has been investigated between the frequency range of 0.1 to 30 Hz. At room temperature the noise spectrum is standard 1/f, and its level is proportional to the square of the bias voltage. With decreasing temperature the noise level also decreases. At 4.2 K the noise level follows a non-monotonic dependence against the bias voltage, showing a peak at a certain bias voltage, meanwhile its frequency dependence also deviates from the 1/f trend. This anomalous behaviour is discussed within the picture of environmental quantum fluctuation of charge transport in the samples.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2024YFA1208800)the National Natural Science Foundation of China(Grant Nos.62404253,62304254,U23A20322)。
文摘Sensor noise is a critical factor that degrades the performance of image processing systems.In traditional computing systems,noise correction is implemented in the digital domain,resulting in redundant latency and power consumption overhead in the analog-to-digital conversion.In this work,we propose an analog-domain image correction architecture based on a proposed small-scale UNet,which implements a compact noise correction network within a one-transistor-one-memristor(1T1R)array.The statistical non-idealities of the fabricated 1T1R array(e.g.,device variability)are rigorously incorporated into the network's training and inference simulations.This correction network architecture leverages memristors for conducting multiply-accumulate operations aimed at rectifying non-uniform noise,defective pixels(stuck-at-bright/dark),and exposure mismatch.Compared to systems without correction,the proposed architecture achieves up to 50.13%improvement in recognition accuracy while demonstrating robust tolerance to memristor device-level errors.The proposed system achieves a 2.13-fold latency reduction and three orders of magnitude higher energy efficiency compared to conventional architecture.This work establishes a new paradigm for advancing the development of low-power,low-latency,and high-precision image processing systems.
基金supported by the National Key R&D Program of China(Grant2022YFF0503700)the National Natural Science Foundation of China(42474200 and 42174186)。
文摘The Macao Science Satellite-1(known as MSS-1)is the first scientific exploration satellite that was designed to measure the Earth's low latitude magnetic field at high resolution and with high precision by collecting data in a near-equatorial orbit.Magnetic field data from MSS-1's onboard Vector Fluxgate Magnetometer(VFM),collected at a sample rate of 50 Hz,allows us to detect and investigate sources of magnetic data contamination,from DC to relevant Nyquist frequency.Here we report two types of artificial disturbances in the VFM data.One is V-shaped events concentrated at night,with frequencies sweeping from the Nyquist frequency down to zero and back up.The other is 5-Hz events(ones that exhibit a distinct 5 Hz spectrum peak);these events are always accompanied by intervals of spiky signals,and are clearly related to the attitude control of the satellite.Our analyses show that VFM noise levels in daytime are systematically lower than in nighttime.The daily average noise levels exhibit a period of about 52 days.The V-shaped events are strongly correlated with higher VFM noise levels.
文摘The 1/fγ noise characteristic parameter Sfγ model in an n-MOSFET under DC hot carrier stress is studied. A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented. The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied. Experimental results agree well with the developed model.
文摘Objectives:The eukaryotic initiation factor 4F(eIF4F)translation initiation complex inhibitors(eIF4Fi)were recently found to hyperactivate extracellular signal-regulated kinases 1/2(ERK1/2)signals,which contribute to acquired resistance to BRAF(B-Raf proto-oncogene,serine/threonine kinase)inhibitors in melanoma.This present study aims to elucidate how to overcome the resistance of the eIF4Fi in BRAFV600E mutant melanoma cells and explore the underlying mechanisms.Methods:Melanoma A375(vemurafenib[VEM]-sensitive)and A375R(VEM-resistant)cells were exposed to eIF4Fi RocA at varying doses and durations in vitro.We investigated the impact of RocA on the activity of ERK1/2,AKT serine/threonine kinase 1(AKT1),eIF4E,and enhancer of zeste homolog 2(EZH2).We then examined the impact of RocA on pro-apoptotic BH3-only proteins and proliferative proteins.We subsequently determined the effect of combined eIF4Fi,AKT1 inhibitor,EZH2 inhibitor or VEM on tumor growth in vitro and in vivo.Results:RocA inhibited proliferation and induced apoptosis in A375 cells,but inhibited proliferation in A375R cells.RocA rapidly reactivated ERK1/2 at 3 h and returned to baseline levels at 48 h.However,eIF4E and AKT1 activation began at 12 h and peaked at 48 h.ERK1/2 positively regulated EZH2 and EZH2-dependent expression of c-Fos and EGR1,while AKT1 negatively regulated c-Myc,c-Jun,and BMF,but positively regulated eIF4E.RocA downregulated ERK1/2(or EZH2,AKT1,and eIF4E)independent bcl-2 and Mcl-1 expression.AKT1i enhanced RocA-induced cell apoptosis,while EZH2i reduced RocA-induced cell proliferation.Combined CR-1-31-B,EZH2i,and AKT1i effectively overcame resistance to RocA and VEM resistance both in vitro and in vivo.Conclusion:The eIF4F complex inhibitor reactivates ERK1/2-EZH2 and AKT1 signaling pathways,resulting in resistance to both eIF4Fi and VEM.Combined administration of an eIF4Fi with EZH2 and AKT1 inhibitors effectively enhances sensitivity to both eIF4F complex and BRAF inhibitors.
基金supported by the National Natural Science Foundation of China(Grant Nos.61076101 and 61204092)
文摘It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of surface recombination current, a 1/f noise model is developed. This model suggests that 1/f noise degradations are the result of the accumulation of oxide-trapped charges and interface states. Combining models of ELDRS, this model can explain the reason why the 1/f noise degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 700 Gy（Si）. The low dose rate was 0.001 Gy（Si）/s and the high dose rate was 0.1 Gy（Si）/s. The model accords well with the experimental results.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61076101,61204092,61334002,and JJ0500102508)
文摘In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas （2DEG） channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.
基金Project supported by the National Natural Science Foundation of China(Grant No.61634008).
文摘The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 nm respectively)is characterized under PBTI stress from 0 s to 104 s.The 1/f noise features are analyzed by using the unified physical model taking into account the contributions from the carrier number and channel mobility fluctuations.The I d-V g,I d-V d,I g-V g tests are conducted to support and verify the physical analysis in the PBTI process.It is found that the influence of the channel mobility fluctuations may not be neglected.Due to the mobility degradation in a short-channel device,the noise level of the short channel device also degrades.Trapping and trap generation regimes of PBTI occur in high-k layer and are identified based on the results obtained for the gate leakage current and 1/f noise.
文摘The 1/f noise in multiwalled carbon nanotubes bundles has been investigated between the frequency range of 0.1 to 30 Hz. At room temperature the noise spectrum is standard 1/f, and its level is proportional to the square of the bias voltage. With decreasing temperature the noise level also decreases. At 4.2 K the noise level follows a non-monotonic dependence against the bias voltage, showing a peak at a certain bias voltage, meanwhile its frequency dependence also deviates from the 1/f trend. This anomalous behaviour is discussed within the picture of environmental quantum fluctuation of charge transport in the samples.
